Library

X
Language
Preferred search index
Number of Hits per Page
Default Sort Criterion
Default Sort Ordering
Size of Search History
Default Email Address
Default Export Format
Default Export Encoding
Facet list arrangement
Maximum number of values per filter
Auto Completion
Feed Format
Maximum Number of Items per Feed
Permalink If you want to be able to use settings permanently, you must save your settings and then set a Bookmark to the permalink
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Electric field effects on persistent spectral holes: Perylene in the polar polymer polyvinylbutyral (1990)
    Springer
    Applied physics 51 (1990), S. 336-341 
    Details
    ISSN: 1432-0649
    Keywords: 78.50.−w ; 61.40.−a
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We investigated the effects of an electric field on a spectral hole burned in the inhomogeneously broadened S 0–S 1 transition of perylene in different samples of the polar polymer polyvinylbutyral (PVB) and in cellulose nitrate. The spectral hole is broadened and reduced in depth by the electric field. It was checked experimentally for perylene in PVB that the hole area remains constant when an electric field is applied. We determined the effective matrix-induced electric dipole moment differences δμ* for perylene in different PVB samples and in cellulose nitrate. Within experimental accuracy the value of δμ* is approximately independent of the composition of PVB and its water content. For perylene in cellulose nitrate the value of δμ* is larger by a factor of 1.5 than in PVB. The results are discussed on the basis of a simple model for the electric field effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348970
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Laser-induced doping of GaAs (1985)
    Springer
    Applied physics 38 (1985), S. 49-56 
    Details
    ISSN: 1432-0630
    Keywords: 66.30 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin layers of GaAs are heavily doped locally by laser induced Se or Zn diffusion. H2Se or diethylzinc gases are used to provide Se or Zn dopant atoms. The surface is locally heated with 3 ns light pulses from a Q-switched frequency doubled Nd-YAG laser. The doping process is described in detail. Doping profiles and sheet carrier concentrations are measured as a function of substrate temperature, laser fluence and processing time. Dopant concentrations of more than 1021 cm−3, with a thickness of the doped layer of less than 20 nm can be achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618726
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Characterization of conducting GaAs multilayers by infrared spectroscopy at oblique incidence (1990)
    Springer
    Applied physics 50 (1990), S. 7-12 
    Details
    ISSN: 1432-0630
    Keywords: 78.20 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical and geometric properties of GaAs multilayer structures are measured nondestructively by infrared reflectance spectroscopy (50–5000 cm−1). Using oblique incidence and both s- and p-polarizations of the probing beam, carrier concentration and thickness of the epitactic films as well as the carrier concentration of the GaAs substrate are determined. The main structures in the spectra are due to phonon reststrahlen bands, Fabry-Perot interferences and the zeros of the dielectric function leading to dips in the reflectance (Berreman Mode). The results compare favorably with a depth-resolved secondary ion mass spectrometric (SIMS) sample analysis. The range of applicability of the method is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323946
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...