Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1
    Electronic Resource
    Electronic Resource
    Light scattering and the microscopic theory of driven noise (1976)
    Springer
    The European physical journal 24 (1976), S. 315-319 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Light scattering is an example of driven noise insofar as it is produced by fluctuations of a transport coefficient. It is shown that this aspect which is well known from the phenomenological theory of scattering can also be applied to a microscopic treatment where it leads in a straightforward manner to the widely used third-order perturbation formula (Loudon, 1963). Besides reproduction of known results from a unified point of view the treatment proposed here also opens easy access to more general problems such as e.g. partial coherence in light scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01360903
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Optical properties of thin films and the Berreman effect (1985)
    Springer
    Applied physics 38 (1985), S. 263-267 
    Details
    ISSN: 1432-0630
    Keywords: 42.10 ; 42.20 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The measurement of reflection and transmission of normally incident light to obtain the optical constants of a material is a usual tool in solid-state spectroscopy. If the material under investigation is a thin film, the interaction of the electromagnetic field with the sample can be enhanced by oblique incidence. If the light is p-polarized, structures in the reflection and transmission spectra are observed at the frequencies of transverse (TO) and longitudinal (LO) resonances. The LO structure — called the Berreman effect — is generated by the surface charges due to the normal component of the electric field. We discuss this effect for three cases: a free film, a film with a metallic back and a substrate with thin films on both sides. The dependence of the effect on the energy-loss function Im {−1/ɛ} and on the film thickness is discussed. For idealized systems simple formulae are derived and a characteristic parameter, called the Berreman thickness, is obtained. Films of this thickness show a maximum effect. Intuitive arguments are given to explain the effect. Examples for the application of the Berreman effect to characterize very thin films are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616061
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Application of Fourier's allied integrals to the Kramers-Kronig transformation of reflectance data (1986)
    Springer
    Applied physics 40 (1986), S. 151-158 
    Details
    ISSN: 1432-0630
    Keywords: 42.10 ; 42.20 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Since the fast Fourier algorithm is available, the representation of the Kramers-Kronig transformation by Fourier's allied integrals offers the possibility of a quick and comfortable calculation. Further advantages of the procedure are explained and demonstrated, e.g. the possibility to examine the “response function” after the first Fourier transformation and to extract physical information; the feature of numerical self-consistency by obtaining back the original spectrum after the second transformation. We present Fourier's allied integrals for the complex-amplitude reflection coefficient and describe a procedure which allows an application of the method to the reflectance of semiinfinite media. Extrapolations of the spectra to low and high frequencies are recommended; thus the range of integration is sufficiently large that the phase needs no correction. The performance of the transformations together with technical details is exposed for four measured spectra as examples: the reflectance of NaCl, InSb, and MnSe at room temperature, together with the reflectance of MnSe at liquid helium temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617396
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Infrared spectroscopy of oxide layers on technical Si wafers (1986)
    Springer
    Applied physics 39 (1986), S. 257-268 
    Details
    ISSN: 1432-0630
    Keywords: 42.10 ; 42.20 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the reflectance and transmittance in the infrared part of the spectrum (400...4000cm−1) are carried out on oxidized Si wafers. Intrinsic dielectric properties of the oxide layers prepared by various methods are derived from experimental data. The dielectric functions of the oxides can be fitted by oscillator models. The related model parameters are compared with those of other SiO2 samples, as crystals and glasses. Optical arrangements to detect and characterize layers of thicknesses down to 3 nm are discussed. In particular, it is shown that experiments with polarized light at oblique incidence up to 80° are a powerful tool to characterize those layers. Experiments are reported to determine, in addition, extrinsic properties such as B and P atoms in the oxide layer or defects due to an ion implantation treatment. Conditions are discussed which should be applied to obtain the best quantitative analysis of the defect concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617270
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Characterization of conducting GaAs multilayers by infrared spectroscopy at oblique incidence (1990)
    Springer
    Applied physics 50 (1990), S. 7-12 
    Details
    ISSN: 1432-0630
    Keywords: 78.20 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical and geometric properties of GaAs multilayer structures are measured nondestructively by infrared reflectance spectroscopy (50–5000 cm−1). Using oblique incidence and both s- and p-polarizations of the probing beam, carrier concentration and thickness of the epitactic films as well as the carrier concentration of the GaAs substrate are determined. The main structures in the spectra are due to phonon reststrahlen bands, Fabry-Perot interferences and the zeros of the dielectric function leading to dips in the reflectance (Berreman Mode). The results compare favorably with a depth-resolved secondary ion mass spectrometric (SIMS) sample analysis. The range of applicability of the method is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323946
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Coherent and incoherent reflection and transmission of multilayer structures (1986)
    Springer
    Applied physics 39 (1986), S. 165-170 
    Details
    ISSN: 1432-0649
    Keywords: 42.10 ; 42.20 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The complex-amplitude reflection and transmission coefficientsr andt of a pile of films are represented as a product of matrices. The matrices describe the transformation of two plane waves travelling in opposite directions between the films, and their development within the films. If one of the films is significantly thicker than the other layers (e.g., several films on a substrate), the calculated reflectanceR=rr * and transmittanceT∼t * show narrow Fabry-Perot oscillations which, in a lot of cases, are not observed in the experiment. Since the matrix method is equivalent to the representation of the amplitudesr andt as a coherent superposition of multiple reflected waves within the thick slab, we are able to suppress, in the calculation, the interference within this thick film by adding the absolute squares of the partial waves corresponding to an incoherent treatment. This procedure is shorter and more simple than averaging over an appropriate interval of frequency or thickness, which, in most cases, leads to the same results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00697414
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...