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  • 61.70  (1)
  • 61.70 Wp  (1)
  • Key words. Serotonin; ligand-gated receptor; G-protein-coupled receptor; patch-clamp; cerebral cortical neuron.  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Cellular and molecular life sciences 53 (1997), S. 233-236 
    ISSN: 1420-9071
    Keywords: Key words. Serotonin; ligand-gated receptor; G-protein-coupled receptor; patch-clamp; cerebral cortical neuron.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract. Effects of serotonin (5-HT) on cerebral cortical neurons were examined by patch clamp techniques. 5-HT produced a variety of responses such as outward (19/73 patches/neurons), slow inward (15/73 patches/neurons), fast inward (8/73 patches/neurons), and mixed currents (initially fast inward deflection followed by an outward response: 2/73 patches/neurons), with a latency of 12 sec, 15 sec, 0 sec, and 0 sec respectively, at a holding potential of −60 mV in whole-cell patches. The fast inward currents were again evoked by a selective 5-HT3 receptor agonist, 1-(m-chlorophenyl)-biguanide hydrochloride (CPBG). In the cell-attached patch clamp configuration, 5-HT inside the patch pipette elicited single channel currents with slope conductances of 42 pS and 132 pS (4/42 patches/neurons). CPBG inside the patch pipette evoked inward single channel currents with a lower slope conductance of 41 pS (3/23 patches/neurons). In contrast, application of 5-HT or a 5-HT2 receptor agonist, α-methyl-5-hydroxytryptamine-maleate, outside the patch pipette induced outward single channel currents with a major slope conductance of 140 pS (8/30 patches/neurons) or 135 pS (6/20 patches/neurons), respectively. These results indicate that the outward and fast inward currents may be mediated respectively by the 5-HT2 receptor, which is coupled to a G-protein, and by the 5-HT3 receptor, which contains the non-selective cation channel, and that the mixed type may be caused by both the 5-HT2 and 5-HT3 receptors.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have measured positron lifetime and Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) distributions of Floating-Zone grown (FZ) Si specimens containing divacancies (V2) with the definite charge states, V 2 0 , V 2 −1 or V 2 −2 from room temperature to about 10 K. These charge states are accomplished by an appropriate combination of dopant species, their concentration and irradiation doses of 15 MeV electrons. with reference to the currently accepted ionization level of divacancies. The positron lifetime of the negatively charged divacancy increases with temperature, while that of the neutral divacancy shows little change with temperature. The positron trapping rate, obtained from lifetime and 2D-ACAR measurements, increases markedly with decreasing temperature. This is found not only for the negative divacancies but also for the neutral divacancy. We need a model which explains this temperature dependence. The 2D-ACAR distribution from positrons trapped at divacancies shows nearly the same distribution for the different charge states, which differs considerably from the case of As vacancies in GaAs studied by Ambigapathy et al. We have observed a small but definite anisotropy in the distribution of trapped positrons in V 2 − using a specimen containing oriented divacancies.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1432-0630
    Keywords: 61.70 Wp ; 61.70 Yq ; 64.75.+g ; 66.30 Jt ; 66.30 Lw
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Floating-zone Si crystals enclosed in quartz ampoules were exposed to Zn vapour released by an elemental diffusion source. Penetration profiles of Zn in Si were recorded using the spreading-resistance technique or neutron activation analysis. Both the erfc-type distributions observed in plastically deformed specimens and the non-erfc profiles determined on dislocationfree wafers are consistently interpreted within the framework of the kick-out model. As an implication, Si self-interstitials generated in excess by interstitial-to-substitutional transitions of in-diffusing Zn atoms annihilate not only at the surface but also at dislocations. On the other hand, dislocation-induced segregation of Zn appears to be rather minor, as revealed by transition electron microscopy. Combining the Zn incorporation rate in dislocation-free Si with solubility data from saturated specimens yields the self-interstitial contribution to the Si self-diffusion coefficient.
    Type of Medium: Electronic Resource
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