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  • 1
    Electronic Resource
    Electronic Resource
    Configuration-Dependent Properties of Poly(dimethylsilmethylene) Chains. I. Experimental Results (1975)
    s.l. : American Chemical Society
    Macromolecules 8 (1975), S. 869-874 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma60048a032
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  • 2
    Electronic Resource
    Electronic Resource
    Configuration-Dependent Properties of Poly(dimethylsilmethylene) Chains. II. Correlation of Theory and Experiment (1975)
    s.l. : American Chemical Society
    Macromolecules 8 (1975), S. 874-878 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma60048a033
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of gas mixture ratio on the luminous efficiency in surface discharge alternating current plasma display panels (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8045-8048 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The improvement of luminosity and luminous efficiency is the one of the most important tasks in alternating current plasma display panels. The influence of gas mixture ratio, Ne–Xe and He–Ne(27%)–Xe(3%), on luminosity and luminous efficiency in surface discharge alternating-current plasma display panels has been investigated. It is found that discharge power does not strongly depend on the gas mixtures, while the luminosity for three species mixture gas, He–Ne(27%)–Xe(3%), is shown to be much higher than those for the two species mixture gas of Ne–Xe. The three species mixture gas, He–Ne(27%)–Xe(3%), can be suggested as the one of the candidates for achieving high luminosity and luminous efficiency for color plasma display panels, based on the experimental observations of luminosity, discharge power, response time, and efficiency. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373495
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  • 4
    Electronic Resource
    Electronic Resource
    Complex periodic oscillations and Farey arithmetic in the Belousov–Zhabotinskii reaction (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 6430-6441 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Our experiments on the manganese-catalyzed Belousov–Zhabotinskii reaction in a stirred flow reactor reveal many sequences of distinct multipeaked periodic states. In the parameter ranges studied the waveform for each periodic state consists of an admixture of small and large amplitude oscillations. No chaos is discernible, and in many cases the transitions from one periodic state to another occur without any observable hysteresis. Two types of sequences were studied in detail, one with waveforms consisting of concatenations of two basic patterns and another with waveforms consisting of concatenations of three basic patterns. The sequences of states with two patterns are described well by Farey arithmetic, which provides rational approximations of irrational numbers. These states can be characterized by a firing number, the ratio of the number of small amplitude oscillations to the total number of oscillations per period. For our data this ratio is a monotone stepwise-increasing function of flow rate, and the steps have a fractal dimension. The relationship between the observed sequence and the Farey arithmetic and the observation of a fractal dimension for the steps in the firing number suggest that the states formed by concatenating two patterns can be interpreted in terms of frequency locking on a 2 torus in phase space. The sequences of states with three basic patterns are described by a generalized Farey arithmetic that provides rational approximations for pairs of irrational numbers that are mutually irrational; this suggests that these states can be interpreted in terms of frequency locking on a 3 torus. A piecewise-linear two-dimensional map is shown to yield a phase diagram in qualitative accord with the measured phase diagram for these sequences.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.451473
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  • 5
    Electronic Resource
    Electronic Resource
    Conductivity and ion density of a plasma channel induced by a mildly relativistic electron beam from a gas-filled diode (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 1514-1521 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductivity and ion density of a plasma channel induced by a mildly relativistic electron beam (300 kV, ∼2 kA, 10–50 ns) have been experimentally investigated under various gas pressures. Pressures of filling gas (air) in this experiment ranged from 10 mTorr to 100 mTorr. The net currents of the beam-induced plasma channel were measured by four Rogowski coils located along the propagating region, while the electron beam currents were measured by a Faraday cup. The inductive plasma currents observed at the above pressure regimes have been characterized by magnetic decay time. Plasma-channel conductivity and ion density induced by the beam are measured along the propagating axial positions under various gas pressures. The numerical result of the ion density is also obtained at the charge neutralization time when the ion density is just the same as the electron beam density, and the digitizing experimental data of the beam current Ib(t) and voltage Vd(t) have been used. As expected, in both numerical and experimental results the ion density increases to a peak value of about 3.0×1011 cm−3 and 3.3×1011 cm−3, respectively, at 50 mTorr and slowly decreases for both cases as the gas pressure increases from 50 mTorr to 100 mTorr. Moreover, the results of ion density predicted by the theoretical model developed here are also found to be in remarkably good agreement with experimental and numerical results at pressure regimes from 10 mTorr to 100 mTorr. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872824
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  • 6
    Electronic Resource
    Electronic Resource
    Multiple-wavelength vertical-cavity laser arrays based on postgrowth lateral-vertical oxidation of AlGaAs (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 282-284 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that combined lateral-vertical oxidation of AlGaAs can be used to change the resonant wavelength of an optical cavity after the single epitaxial growth. A multiple-wavelength array of vertical-cavity surface-emitting lasers with a 48 nm wavelength span has been realized using this technique. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121795
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  • 7
    Electronic Resource
    Electronic Resource
    Resonant-cavity InGaAs/InAlGaAs/InP photodetector arrays for wavelength demultiplexing applications (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2347-2349 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant-cavity photodetector arrays are demonstrated in the InGaAs/InAlAs/InP material system grown by solid-source molecular beam epitaxy. To reduce crosstalk between channels, these devices are designed with a high-Q cavity to obtain narrow-band photoresponse. In addition, a novel double-absorber design has been proposed and implemented to avoid position sensitivity related to the cavity standing wave and eliminate the need for in situ cavity-mode adjustment. Both Schottky and P-i-N diode structures are studied and compared. Eight element arrays with linearly distributed resonant wavelengths spanning over 30 nm are fabricated by using a three-level anodic oxidation process. An experimental channel rejection ratio of 14.5 dB at 4 nm away from the resonant peak has been achieved. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118870
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  • 8
    Electronic Resource
    Electronic Resource
    Vacuum field induced mixing of light and heavy-hole excitons in a semiconductor microcavity (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3465-3467 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements in a semiconductor microcavity reveal the coupling between light- and heavy-hole excitons that is mediated by the electromagnetic vacuum. Three polariton modes constructed from superpositions of heavy-hole excitons, light-hole excitons, and photons are observed. The experimental results are in good agreement with the theory of three-coupled bosonic modes, each coupled to an independent reservoir. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117253
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  • 9
    Electronic Resource
    Electronic Resource
    Measurement of the AlGaInAs/AlGaAs conduction-band offset using ballistic electron emission spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3271-3272 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ballistic electron emission spectroscopy (BEES) has been used to determine the conduction-band offset between a 10-nm-thick Al0.12In0.22Ga0.66As (Q) strained layer and a ternary Al0.2Ga0.8As (T) barrier located beneath the surface. A three-sample process was used so that the known, reproducible Au/GaAs Schottky barrier would be the top layer of all measured structures. BEES thresholds obtained for Au/GaAs, Au/GaAs/Q, and Au/GaAs/Q/T were 0.96±0.02, 0.98±0.04, and 1.08±0.04 meV yielding offsets of ∼20 meV for GaAs/Q and ∼100 meV for Q/T. Under the affect of a high-temperature anneal, the Q/T offset was reduced to ∼40 meV. In addition, a structure employing solely Au/GaAs/AlGaAs was used to study transitivity for the Q/T material system. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122741
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  • 10
    Electronic Resource
    Electronic Resource
    Technique for integration of vertical cavity lasers and resonant photodetectors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1-3 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a design that allows fabrication of substrate input/output resonant-cavity photodetectors and vertical cavity lasers (VCLs) on the same substrate without regrowth. By selectively oxidizing a few layers in the bottom mirror the as-grown 80% reflectivity mirror, used as the input mirror for the detector, is converted to a 99.3% reflectivity mirror allowing fabrication of VCLs from the same epitaxial material. Since these two reflectivities are uncorrelated, the detectors and VCLs can be individually designed. Despite the change in refractive index from ∼3 to ∼1.6 in the oxidized layers, the structure can be designed to have nearly the same resonance wavelength for both the detectors and VCLs. Using this design strategy, we have successfully fabricated high-performance resonant photodetectors and VCLs from the same epitaxial material. The photodetectors have an absorption of 56% and an optical bandwidth of 5.9 nm, in good agreement with theory. Small diameter, single-mode VCLs have threshold currents as low as 180 μA with 33% slope efficiencies while multimode devices have slope efficiencies exceeding 60% with less than 500 μA threshold currents. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122951
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