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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8982-8992 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ion energy distributions (IEDs) at the electrodes in a capacitively coupled 13.56 MHz plasma in CF4 have been measured mass resolved with a Balzers quadrupole in combination with a home-built energy analyzer. Mass-resolved determination offers the possibility to compare the IED of different ions achieved in the same sheath. The IEDs have been determined at both the largest and the smallest electrode. Apart from the IEDs of the CF4 species, the IEDs of ionic species in plasmas in argon and nitrogen also were determined. Apart from the CF4 ionic species CF+3, CF+2, CF+, and F+, CHF+2 ions also are present in the CF4 plasma due to residual water in the reactor. Because the CHF+2 ions are not produced in the sheath and because we do not detect elastically scattered ions, the IEDs of these ions show the typical bimodal distribution for rf plasmas which corresponds to an IED of ions which have not collided in the sheath. From these IEDs we can obtain the sheath characteristics, such as the averaged sheath potential. From the IEDs of CF+n ions one can conclude that, in the sheath of the CF4 plasma, a large number of chemical reactions takes place between the CF+n ions and the neutrals. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4867-4872 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The average electron density and electron density fluctuations in a dusty Ar/SiH4 rf discharge have been studied using a microwave resonance technique. The average electron density increases with rf input power and it has a maximum as a function of pressure at about 30 mTorr. Within the first second of plasma operation the electron density decreases with a factor of ten. This is caused by submicroscopic particles, formed in the discharge, which rapidly absorb electrons. When the particles reach a critical size they are expelled from the plasma. This process is governed by a balance between the Coulomb force, trapping the particles in the positive plasma glow and the neutral drag force, flushing them out. The periodic growth and expulsion of particles, monitored by light scattering, results in an oscillatory behavior of the electron density. From the measured oscillation period (τ), which is in the order of seconds to minutes, and its dependence on the gas flow rate (F) and on the fraction α of SiH4 in the plasma (τ[s]≈4.5×102α−1F−2 [sccm], at 10 W rf power input), the trapping force (FC) on particles can be calculated: FC[N]≈4×10−18r [nm], where r is the radius of a particle. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2252-2254 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching (RIE) of epitaxial, strained Si1−xGex alloys, x≤0.20, in fluorine-, chlorine-, and bromine-based low-pressure plasmas has been investigated. The SiGe etch rates increase for each etchant with Ge concentration, e.g., for fluorine-based RIE (CF4 and SF6) the etch rate of a Si80Ge20 alloy is (approximately-equal-to)2x that of elemental Si. Analysis shows that the etch rate increase is not accounted for by the greater rate of gasification of Ge atoms alone but that the presence of Ge atoms in the SiGe alloy increases the rate of Si etch product formation.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2597-2599 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments to study negative ion densities have been carried out using the photodetachment effect in a rf plasma in CF4. Electrons are detached from the negative ions under the influence of the pulse of a Nd:YAG laser. The induced increase of the electron density is measured as a function of time using the shift of the resonance frequency of a microwave cavity containing the plasma. The negative ion density [F−] is found to be about (4±1)×1015 m−3, a factor 4±1 higher than the electron density.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3899-3904 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron density and the electron temperature in a low-pressure argon mercury positive column are determined using Thomson scattering. Special attention has been given to the stray light reduction in the Thomson scattering setup. The results are obtained in a discharge tube with a 26 mm diam, 5 mbar of argon, a mercury pressure in between 0.14 and 1.7 Pa, and an electric current ranging from 200 to 400 mA. The systematic error in the electron density is 15%, the statistical error is 25%. The total error in the electron temperature is 10%–20%. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1496-1498 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal energy flux which a rf plasma delivers to a silicon surface has been studied by a calorimetric method. The energy flux appears to be proportional to the product of the average ion energy and the ion flux, which was calculated from the Bohm criterion using measured plasma parameters. Furthermore, the value and energy dependence of the kinetic energy transfer efficiency (about 0.5) suggests that the microscopic interaction of impinging ions in the eV range with a silicon surface can be described by a binary collision model.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1351-1353 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The complex refractive index at a wavelength of 632.8 nm of strained epitaxial SiGe layers on silicon substrates has been determined as a function of the germanium content using in situ ellipsometry during reactive ion etching. The germanium concentration was obtained from Rutherford backscattering. These index values are used to invert the ellipsometry equations. Using this principle, the Ge concentration depth profile of an unknown SiGe structure can be determined from an in situ ellipsometry measurement sequence that is taken while the unknown sample is being etched
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 308-310 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mass-resolved ion energy distribution (IED) at the grounded electrode has been determined in a 13.56-MHz parallel-plate plasma in argon. The IED is determined of Ar+, Ar2+, Ar2+, ArH+, H3O+, and H3+ for several plasma conditions. At pressures higher than 10 mTorr, collisions in the sheath become important. The IED of Ar+ is particularly defined by charge exchange collisions in the sheath while the IED of the other ions shows only features generated by elastic scattering. This is confirmed by Monte Carlo simulations. The measurements clearly show the necessity of simultaneous mass and energy separation, rather than the nonmass-resolved IED reported in the literature.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1528-1530 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a promising option for changing the emission spectrum of a fluorescent lamp. In a neon/mercury discharge, neon radiation is produced when the mercury density is sufficiently low. Under certain discharge conditions, radial cathaphoresis causes depletion of mercury atoms in the center of the plasma. This effect is especially well pronounced at high electrical currents and low mercury pressures. We measured the color temperature of a fluorescent lamp containing a neon/mercury discharge at several mercury pressures and currents. The color temperature of this lamp varied from 4000 to 2100 K. We also performed ultraviolet absorption measurements. From these measurements, we obtained the mercury atom density profile in the discharge. A significant decrease of the mercury density in the center of the plasma is indeed observed under certain discharge conditions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 20
    ISSN: 0375-9474
    Keywords: Nuclear reactions
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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