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  • 11
    Electronic Resource
    Electronic Resource
    High second-harmonic conversion efficiency of quasi-phase-matched LiTaO3 waveguides pumped by single-mode pulsed AlGaAs laser diodes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2263-2265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the averaged second-harmonic conversion efficiency of quasi-phase-matched LiTaO3 waveguides can be increased by a factor larger than 15 with the use of single-mode pulsed AlGaAs laser diodes as the optical sources. The proton exchange followed by thermal annealing is used both to periodically change the sign in d33 nonlinear coefficient and to fabricate the waveguides. Laser pulses are produced by strong rf modulation of the diode current while single-mode operation is achieved with a grating-tuned external cavity. The averaged conversion efficiency is found to linearly increase with peak power of pulses even in the case of pulses whose spectral width is larger than the spectral acceptance of LiTaO3 waveguides. Experimental results are in agreement with calculated ones. The conversion efficiency of 450 %/W presently reached at optimum (i.e., 1% for 2.2 mW pump and 1 cm interaction length) is among the highest performances reported to date for frequency doubling of laser diodes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115120
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  • 12
    Electronic Resource
    Electronic Resource
    Absorption and resonant dispersion associated with normal incidence intersubband transitions in Si/SiGe quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3462-3464 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modulation of midinfrared beam by photoinduced intersubband absorption in undoped Si/SiGe quantum wells is investigated at normal incidence. Optical pumping of interband transitions is used to photocreate carriers in the wells. The modulated transmission of the sample is measured by Fourier transform spectroscopy. Resonant dispersion associated with intersubband transitions as well as interference effects in the quantum well stack are clearly evidenced. It is shown that the phase modulation due to refractive index variations may compensate for amplitude modulation due to absorption. Measurements are well fitted by a phenomenological model. It is also shown that the modulation depth and the wavelength modulation profile both depend on the interband excitation wavelength. This result is attributed to the different nature of photoinduced transitions according to the excitation wavelength. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115247
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  • 13
    Electronic Resource
    Electronic Resource
    Band-edge and deep level photoluminescence of pseudomorphic Si1−x−yGexCy alloys (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 875-877 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence of strained Si1−x−yGexCy alloys grown by rapid thermal chemical vapor deposition on Si(100) is investigated. Two dominant features are reported: At low pump intensities, the photoluminescence is dominated by a deep level broad luminescence peak around 800 meV whereas at high pump intensities, a well-resolved band-edge luminescence (no phonon and transverse optic replica) is observed. At 77 K, we attribute this band-edge feature to an electron-hole plasma luminescence of the ternary alloy. The dependences of the deep level and band-edge peaks versus the excitation power density are, respectively square-root-like or superlinear. A blue shift of the energy gap of Si1−x−yGexCy alloys with respect to Si1−xGex alloy is observed. The blue shift increase with carbon content corresponds to what is expected for the bulk alloy. An eventual influence of the strain relaxation cannot be excluded.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110981
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  • 14
    Electronic Resource
    Electronic Resource
    Erratum: "Optical saturation of intersubband absorption in GaAs-AlxGa1−xAs quantum wells'' [Appl. Phys. Lett. 53, 116 (1988)] (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2289-2289 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109643
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  • 15
    Electronic Resource
    Electronic Resource
    Intersubband absorption in Si/Si1−x−yGexCy quantum wells (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1734-1736 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intersubband absorption in the valence band of Si–Si1−x−yGexCy multiquantum wells is reported. The quantum wells with x≈17% and y≈1% and thicknesses around 3 nm are grown pseudomorphically by rapid thermal chemical vapor deposition on Si(001). The carbon is incorporated in substitutional site using methylsilane as the gas precursor. The quantum wells exhibit near-band-edge photoluminescence with no-phonon and phonon-assisted replica. The energy position of the no-phonon and phonon-assisted replica are shifted to high energy with respect to bulk alloys due to the quantum confinement of the first heavy hole subband. The intersubband absorption between confined subbands is measured in a multipass waveguide geometry under optical pumping. Absorptions for light with an electric field polarized either parallel or perpendicular to the growth axis are observed in both SiGe and SiGeC quantum wells. The absorptions peak at 100 and 130 meV and involve bound-to-bound and bound-to-continuum transitions. The spectral positions of the intersubband absorptions are discussed from numerical calculations accounting for the band gap variation induced by carbon. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118013
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  • 16
    Electronic Resource
    Electronic Resource
    High-power GaAs/AlGaAs quantum fountain unipolar laser emitting at 14.5 μm with 2.5% tunability (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1537-1539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate operation of a high-power quantum fountain unipolar laser relying on intersubband emission in optically pumped GaAs/AlGaAs quantum wells. The collected power per facet is as large as 2.3 W at 20 K and 1.5 W at 120 K, which translates into 6.6 W optical power per facet at low temperature accounting for collection efficiency. The maximum operating temperature is 135 K. We also demonstrate that the lasing wavelength can be tuned by as much as Δλ/λ(approximate)2.5% simply by tuning the pump wavelength. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123608
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  • 17
    Electronic Resource
    Electronic Resource
    Experimental demonstration of electrically controllable photonic crystals at centimeter wavelengths (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1625-1627 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrically controllable photonic crystals have been fabricated by inserting p-i-n diodes in two-dimensional metallic lattices. A first structure uses a square lattice of thin and discontinuous metallic wires. A second structure is fabricated using stacks of printed circuits with metallic strips. The p-i-n diodes are soldered along the different metallic wires or strips. The crystals have been characterized between 1 and 20 GHz. We show that they can be operated as wideband switchable electromagnetic windows with high transmission or reflection contrast between on and off states. A ∼25 dB transmission modulation is reported within the first transmission band of a two-period crystal. We also show that the switching domain and modulation rate can be varied with a separate bias control for each crystal plane. Finally, the distance between crystal planes is used to tune the operating frequency range. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124775
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  • 18
    Electronic Resource
    Electronic Resource
    Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1822-1824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated light-emitting diodes on Si operating in the near-infrared. The active region of the p–i–n diodes consists of Ge/Si self-assembled quantum dots. The Ge islands were grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The photoluminescence and the electroluminescence of the islands are resonant in the spectral range around 1.4–1.5 μm wavelength. The electroluminescence is observed up to room temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1308526
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  • 19
    Electronic Resource
    Electronic Resource
    Submicrometer resolution Yablonovite templates fabricated by x-ray lithography (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 770-772 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication and optical characterization of diamond-like photonic structures with 1.3 μm lattice constants. In analogy with the first Yablonovite obtained by a mechanical drilling of a dielectric material, the structures are fabricated in poly(methylmethacrylate) resist using three consecutive exposures to an x-ray beam through a triangular lattice of holes. Up to six crystal periods are obtained in a 6.2-μm-thick resist. The measured reflection and transmission spectra show well contrasted photonic gaps in agreement with numerical simulations. This demonstrates the good optical quality of the structures that can be used as porous templates for transferring the diamond-like pattern to high-refractive-index dielectrics or metals. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1306646
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  • 20
    Electronic Resource
    Electronic Resource
    Subgap optical absorption and recombination center efficiency in bulk GaAs irradiated by light or heavy ions (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 40-42 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports the results of a comparative study on heavy- and light-ion-irradiated semiconductors for fast saturable absorbers. The linear absorption of bulk GaAs irradiated either by Au+ ions or protons was measured over a wide range of wavelengths below the gap. Good correspondence was found between the absorption measurements and the calculated elementary defect concentrations. Defect clustering is evidenced in the heavy-ion case. Pump–probe experiments were used to measure the time-resolved absorption variations for weakly irradiated GaAs samples under intense illumination. Much shorter carrier recombination times are estimated for the heavy-ion case. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125649
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