Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 1101-1103
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The optically excited luminescence of epitaxial InAs has been studied at 1.4 K, revealing well-resolved emission lines identified as the exciton–polariton, neutral–acceptor–bound exciton principal and two-hole transitions, donor–acceptor pair band, and phonon assisted transitions. These features are seen in samples of high purity InAs grown by metalorganic chemical vapor deposition on InAs substrates using tertiarybutylarsine and trimethylindium. Only one acceptor species is observed, having a 1 S3/2–2 S3/2 transition energy of 13.39±0.01 meV, and an acceptor–bound exciton binding energy of 2.11±0.03 meV. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113825
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |