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  • 1
    Electronic Resource
    Electronic Resource
    Low-temperature photoluminescence of epitaxial InAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6416-6424 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence studies as well as reflectance and transmittance measurements were performed on high-purity epitaxial InAs grown by metal-organic chemical-vapor deposition. We report the optical identification of excitonic, donor, and acceptor impurity related transitions at a temperature of 1.4 K. Measurements at higher temperature and in the presence of magnetic fields up to 7 T support these identifications. We find the excitonic band gap at 415.65±0.01 meV according to the minimum in the polariton reflectance feature. The donor–acceptor-pair and acceptor-bound exciton transitions for three different acceptors are observed by photoluminescence, and we tentatively associate one of them to a double acceptor formed by a Ga impurity on an As lattice site. A donor-bound exciton transition is observed with a binding energy of 0.42 meV. The magnetic field dependence yields values of the electron effective mass and g factor of (0.026±0.002)m0 and −15.3±0.2, respectively, in good agreement with values obtained by other techniques. Furthermore, we report a deep luminescence band of unknown origin at ∼375 meV, related to drastic temporal changes in the band-edge photoluminescence intensity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363660
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  • 2
    Electronic Resource
    Electronic Resource
    Strain effects in high-purity InP epilayers grown on slightly mismatched substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2460-2465 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of high-purity InP on various As-, S-, and Fe-doped InP substrates has been investigated using high-resolution photoluminescence spectroscopy (PL) and high-resolution x-ray diffractometry. Substrate induced strains of −7×10−5 or less have been observed using low-temperature PL. In this way information about the strain dependence of the electronic excited states of the donor bound excitons in InP was obtained. In addition, it was shown that the assessment of variations in substrate lattice parameter can be determined with a resolution of at least 5×10−6 by PL techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356271
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  • 3
    Electronic Resource
    Electronic Resource
    Transport measurements and donor spectra of very high purity GaAs grown using tertiarybutylarsine and triethylgallium (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2952-2956 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very high purity n-type GaAs epilayers were grown by low pressure metalorganic chemical vapor deposition using triethylgallium and tertiarybutylarsine (TBA) or arsine (AsH3). Peak Hall mobilities of 209 000 cm2/V s at 45 K were observed for growth with TBA. Carrier concentration and mobility measurements down to liquid helium temperatures verified the high purity of these layers. Scattering mechanisms were determined by fits to the mobility data, and found to be in agreement with previous high purity GaAs studies. Donor identification was carried out using magnetophotoluminescence spectroscopy. A comparison of the residual donor species for AsH3- and TBA-grown epilayers is presented. No evidence of preferential n-dopant incorporation was observed for layers grown with TBA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356191
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetophotoluminescence characterization of residual donors in GaAs grown by metalorganic chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3205-3209 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The residual donor species in undoped GaAs epilayers grown by metalorganic chemical vapor deposition have been characterized by magnetophotoluminescence (MPL) measurements at high magnetic fields (7 T). Most samples were grown using trimethylgallium and arsine, but samples grown using the liquid group-V source t-butylarsine were also studied. The results show good agreement with identifications previously made in high-purity samples (NA+ND≤5×1014 cm−3) at zero magnetic field, but with greatly improved spectral resolution and signal levels. With the MPL technique, residual donor species were resolved even in relatively impure samples (NA+ND=1×1016) for which no information was obtained at zero magnetic field. For the samples grown with arsine, Ge donors were observed to predominate in the high-purity samples, but Si was the dominant donor in the lower-purity samples. The Si impurity was traced to contamination from a quartz baffle in the growth chamber. Lower levels of sulfur donors were observed in many samples. Sulfur was found to be the second most predominant donor after Ge in samples grown with t-butylarsine.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341537
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  • 5
    Electronic Resource
    Electronic Resource
    Residual donor and acceptor incorporation in InP grown using trimethylindium and tertiarybutylphosphine (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2797-2801 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual donor and acceptor species were studied in a series of high purity n-type InP epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine and trimethylindium (TMIn). Over the entire range of growth conditions, the residual donors were found to be S and Si using magnetophotoluminescence spectroscopy. These designations agreed with the observed dependence of the transport data on growth conditions. Residual levels of Zn and Mg or Be acceptors were identified by photoluminescence (PL) measurements at low excitation powers. C acceptors were below the limits of detection by PL, as in other studies using phosphine and TMIn.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352344
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  • 6
    Electronic Resource
    Electronic Resource
    In situ observation of indium segregation by reflectance difference spectroscopy in single monolayer heterostructures grown by atomic layer epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1576-1578 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single monolayers of InAs in GaAs and GaAs in InAs have been grown by atomic layer epitaxy (ALE) at 50 Torr. In situ reflectance difference spectroscopy monitoring of the surface during each stage of the growth showed a strong asymmetry in the surface behavior between the two systems. Following insertion of an InAs monolayer in GaAs, approximately 20 ML of GaAs are required to recover an In-free, As-stabilized GaAs surface at 390 °C. On the other hand, following the insertion of 1 ML of GaAs in InAs, the spectrum returns to a Ga-free, As-stabilized InAs surface after only 1 ML of InAs deposition. This behavior shows clear evidence of the presence of segregation caused by thermodynamic factors even at the very low growth temperatures used for ALE. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114944
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  • 7
    Electronic Resource
    Electronic Resource
    Sources of donor impurities in undoped GaAs grown using arsine and trimethylgallium (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1625-1630 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetophotoluminescence spectroscopy (MPL) has been used to ascertain the source of donor impurities in high-purity GaAs grown by atmospheric pressure metalorganic vapor deposition using arsine and trimethylgallium. A linear correlation between absolute MPL intensity and net carrier concentration for high-purity n-type epilayers over the concentration range 1×1014–2×1015 cm−3 provided an unambiguous method for identifying the source of donor impurities by comparing epilayers grown with different source batches. Batch-to-batch variations in the quality of films grown with eight different arsine cylinders were traced directly to the presence of varying amounts of a Ge-containing contaminant in the arsine.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347259
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  • 8
    Electronic Resource
    Electronic Resource
    Growth mechanisms in atomic layer epitaxy of GaAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3390-3397 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the different mechanisms governing the growth of GaAs by atomic layer epitaxy (ALE). The gallium precursors such as trimethylgallium (TMGa), triethylgallium (TEGa), and trisneopentylgallium (TNPGa) were characterized and compared during ALE by in situ reflectance difference spectroscopy (RDS). A fundamental difference is observed in the RDS behavior after the alkyl exposure between self-limiting and non-self-limiting precursors. A transient is observed during the purge following alkyl exposure for both self-limiting sources, (TMGa and TNPGa), and is absent with TEGa. This is attributed to the presence of methyl radicals when using self-limiting precursors. Atomic force microscopy measurements of the surface morphology show that a non-self-limiting surface prepared with TEGa has droplets forming on it. In contrast, TMGa and TNPGa show well-defined terraces without droplets. RDS real-time measurements show that Ga incorporating on the c(4×4) surface first reacts with the As in the top layer with a process involving both desorption of As and rearrangement of the remaining top As. We used these measurements to provide a detailed structural model of the process of Ga incorporation, and thus, solve the problem of how an As-rich surface with more than 1 ML coverage can yield 1 ML of material per ALE cycle. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367137
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial growth of high-mobility GaAs using tertiarybutylarsine and triethylgallium (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 478-480 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of nominally undoped GaAs have been grown by metalorganic chemical vapor deposition using liquid tertiarybutylarsine and triethylgallium. n-type layers were obtained having total residual shallow acceptor concentrations of ∼1013 cm−3 and Hall mobilities comparable to those obtained with arsine and triethylgallium in the same reactor. Liquid-nitrogen Hall mobilities up to 116 000 cm2 /V s were observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102771
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  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence identification of residual donors in undoped GaAs grown by metalorganic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 401-403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photoluminescence technique was used to identify residual donors in the 1014 cm−3 range in high-purity GaAs grown by metalorganic chemical vapor deposition. The measurements were taken at zero magnetic field. A narrow-linewidth tunable laser was used to resonantly enhance a specific narrow-linewidth "two-electron'' satellite line of the donor-bound exciton, enabling determination of the 1s-to-2s donor energy separations. Ge was identified as the dominant residual donor. Lower levels of the donors X1 and X2 were observed in some samples. These are attributed to Si (or possibly Sn) and S donors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99479
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