ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
4H-SiC substrate wafers with epi-layers were observed using monochromatic synchrotronX-ray topography in grazing incidence geometries, to investigate the defects in the epi-layer. Misfitdislocations with b=+1/3[11 2 0] caused by the difference in lattice parameter between the epi-layerand the substrate were observed. The misfit dislocations are located near the interface as edgedislocations, and appear at the top surface as screw dislocations on basal planes. It was observed thatmore than half of them were introduced from the growing epi-layer surface. The misfit dislocationsand some screw dislocations with b=+1/3[11 2 0] are observed to remain as basal plane dislocationsat the surface, while other basal plane dislocations were converted to threading edge dislocations inthe epi-layer
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.309.pdf
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