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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 363-366 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In neutron-transmutation doping for undoped and In-doped GaAs irradiated with thermal and fast neutrons of 1.5×1018 and 7.0×1017 cm−2, we have found for the first time photoluminescence emissions around 860 and 935 nm at 77 K associated with the two difference levels of Ga antisite defect (GaAs). It is suggested that the annealing of GaAs defects plays an important role in the activation process of transmuted impurities as well as the annealing of As antisite defects forming midgap electron traps. The GaAs defects are annihilated in an annealing temperature range from 650 to 700 °C, accompanied by an abrupt decrease in resistivity.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 61-65 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The substitutional site of the implanted Ga impurity in (11¯00)-oriented 6H-SiC has been investigated using the preferential scattering effect of He ions. The Si and C monoatomic strings are preferentially observed by the angular scans across 〈11¯00〉 axial channels parallel to (112¯0) plane. Ga ions are implanted at an energy of 400 keV to a dose of 5×1015/cm2 through 200-nm-thick SiO2 at room temperature. In the samples annealed at 1200 °C for 30 min, the implanted Ga impurities in SiC are located preferentially on the Si sublattice sites rather than on the C sublattice sites in 6H-SiC. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A charge-exchange neutral particle analyzer for the measurement of the MeV energy range ions produced by nuclear fusion or radio frequency heating has been developed and installed in JT-60U. Neutral particles entering the analyzer are ionized with a carbon foil of thickness 400 A(ring). The energy and mass of the stripped ions are resolved by magnetic and electrostatic fields (E(parallel)B type). The analyzer has eight CsI(Tl) scintillator detectors. The energy range is 0.5–4 MeV for 4He0, the dynamic range is 4.08 and the energy resolution is 6%–11%. The detection efficiency for 4He0 with energy above 1 MeV is 30%–40%. A pulse height analysis (PHA) with 16 channels was adopted to distinguish particle signals from noise arising from neutrons, γ rays and optical lights emitted by JT-60U plasmas. The validity of the PHA was confirmed in a calibration experiment using a neutron source and in a high power heating experiment in JT-60U. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background Transforming growth factor (TGF) -β has been suggested to be an effective inhibitor for abnormal keratinocyte growth in psoriasis. As a majority of the secreted TGF-β are biologically latent complexes, activation is essential for TGF-β-mediated cellular responses in vitro and in vivo. Objectives Here we report the response of the TGF-β regulation system to 1α,25-dihydroxyvitamin D3[1,25(OH)2D3], an active vitamin D3 analogue Patients/methods We studied two types of fibroblasts derived from normal and psoriatic lesional skin, using an enzyme-linked immunosorbent assay and Northern blotting techniques. Results 1,25(OH)2D3 caused a dose-dependent induction of latent and active TGF-β1 proteins in both cell cultures. The increases were significant over 72 h, but not within 48 h after stimulation. The time course of TGF-β1 mRNA expression showed a biphasic response consisting of early (≈1 h) and late phases (≈ 96 h) of induction. Concomitant increases of TGF-β2 and -β3, other mammalian isoforms , were observed in the 1,25(OH)2D3-treated cells, but the kinetics were all different. Co-incubation with metabolic inhibitors, actinomycin D and cycloheximide, revealed that the early induction of TGF-β1 mRNA by 1,25(OH)2D3 is dependent on de novo RNA synthesis, but not on RNA stabilization or protein synthesis. It seems likely to be a transient and negligible response given the absence of TGF-β1 protein production. The late induction of TGF-β1 mRNA was partially blocked by adding isoform-specific antibodies to TGF-β1, -β2 and -β3, indicating TGF-β autoregulation. Despite these marked responses, there were no significant differences in the TGF-β expression between normal and psoriatic fibroblasts. Conclusions These results suggest that antiproliferative and anti-inflammatory effects of 1,25(OH)2D3 on psoriatic lesional skin may be mediated, at least in part, by a complex TGF-β regulation in local dermal fibroblasts.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1074-1076 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In undoped and In-doped semi-insulating GaAs with various dislocation densities, we have found that the quenching phenomenon of photoconductance is enhanced by γ irradiation above 107 rad at room temperature. In particular, this effect is obvious for crystals with dislocation densities of 10–103/cm2. The new stage induced by γ irradiation is found around 100 K and disappears gradually by annealing above 300 °C. The time dependence of photoconductance suggests the existence of the newly introduced state assisting the transition from a normal midgap electron trap (EL20) to a metastable state (EL2*) in the semi-insulating materials.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1099-1103 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of the tunneling-assisted hopping conduction in neutron-transmutation-doped GaAs has been studied under photoexcitation with a photon energy of 1.32 eV. It is found that the dopants activated by annealing around 400 °C provide the electrons to the defect levels originating the hopping conduction even when under photoexcitation. The hopping conduction under photoexcitation is affected by quenching in photoconductance below 120 K concerned with the main electron trap (EL2) and/or the As antisite defect (AsGa) induced by the neutron irradiation. The photoconductance of the samples with a lower radiation damage, AsGa≤1×1018 cm−3, consists of the coexistence of the hopping and band conductions.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2248-2253 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In neutron-transmutation-doped GaAs irradiated with various fast neutron fluences, the annealing behavior of band-germanium acceptor [Ge(B-A)] transitions has been evaluated using the photoluminescence technique. In the fast neutron irradiation of ≤7.0×1017 cm−2, a few percent of transmuted Ge atoms behave as acceptors in As sites and more than 98% of the transmuted Ge atoms activate as donors in Ga sites. In the fast neutron irradiation of 3.7×1018 cm−2, the shift of Ge(B-A) transitions towards lower energies originates from the band-edge distortion. Removing the band-edge distortion by annealing above 790 °C leads to the increase in the Ge acceptor, accompanied by an increase of the peak intensity of Ge(B-A) transitions. The lower electrical activation of transmuted impurities (∼75%) arises from the high-temperature annealing required to remove the radiation damage. On annealing out the radiation damage, the peak shift of Ge(B-A) transitions based on the increase in the free carrier is discussed using the Burstein–Moss model.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    International journal of cosmetic science 26 (2004), S. 0 
    ISSN: 1468-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: There is great interest in the cosmetic field in improving the shape of the face, which is determined by the amount of bone, muscle and subcutaneous fat. We examined the amount of facial subcutaneous fat in healthy women by magnetic resonance imaging (MRI), and investigated the distribution of fat in relation to the body shape. A total of 38 healthy women; 10 lean, 18 normal and 10 obese subjects, were examined by cephalometric MRI to obtain T1-weighted images, by which fat regions can be clearly observed. The area of subcutaneous fat was greater in obese subjects than in normal subjects, and was decreased in lean subjects. At 45 measured points, the thickness of subcutaneous fat was greater in the cheek near the nose independently of the body shape, and the surface of the masseter muscle and lower jaw increased according to the body mass index (BMI). This research suggested that there are two types of regions, one type maintains fat mass and the other type increases with BMI.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    International journal of cosmetic science 27 (2005), S. 0 
    ISSN: 1468-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In this study, age-associated changes in facial skin, cosmetologically critical factors, were studied in terms of local subcutaneous fat tissue. The subjects were 98 Japanese females evenly chosen from their teens to 70s. On each subject, the thickness of subcutaneous tissue was determined by the ultrasonic B mode method on four facial sites, forehead, orbit, cheek, and mandible. Age-association of the tissue thickness was facial site-dependent. In the orbit, the subcutaneous tissue became thicker with age, whereas it showed a tendency of thinning in the forehead. No clear age-association was observed in the cheek or the mandible. To analyze the age-association further, the data were stratified into ‘lean group’ and ‘obese group’ based on their BMI, and subjected to multiple regression analysis. The age-association in the orbit was much more distinctive in the lean group than in the obese group.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3890-3892 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The local distortion in the indium-doped semi-insulating GaAs has been evaluated by means of ion channeling experiments along three directions for various indium concentrations up to 6.3×1020/cm3. The local distortion due to the indium doping gradually increases with the indium concentration, accompanied by the increase in minimum yield along the 〈100〉, 〈110〉, and 〈111〉 axes. The increase of the local distortion is independent of the crystal growth method.
    Type of Medium: Electronic Resource
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