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  • 1
    Electronic Resource
    Electronic Resource
    Thermal degradation of InP in open tube processing: deep-level photoluminescence (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2324-2330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal processing of InP at temperatures above 500 °C is indispensable in the growth and device fabrication of InGaAsP alloy semiconductors for optoelectronic and microwave applications. Incongruous loss of P at these temperatures creates native defects and their complexes. The presence of such defects modifies the electrical and optical properties of the material resulting in poor device performance. In addition, native defects play a significant role in dopant diffusion which is a topic of current interest. We have measured deep-level photoluminescence (PL) on undoped InP after heat treatments at 500 and 550 °C in an open-tube processing system in different protective environments of powder InP, and Sn-InP melt together with an InP cover. In this paper we shall present the PL results which have bearing on the question of defects. We find that (1) the Sn-InP melt provides better protection in preserving the overall luminescence in InP; (2) the deep-level PL related to defects has at least two components in the virgin samples, viz., MnIn, and band C, which is a native defect complex related to VP; (3) a new defect appears in samples heated in a P-deficient environment; and (4) the enhancement in the deep-level luminescence intensity after heat treatment can be attributed to the excess defect concentrations existing under nonequilibrium conditions of an open-tube processing environment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346539
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  • 2
    Electronic Resource
    Electronic Resource
    Measurement of band offset of a strained-layer single quantum well by a capacitance-voltage technique (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7618-7620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a modified Kroemer's analysis [Appl. Phys. Lett. 36, 295 (1980)] for the determination of the band offset ΔEc of a single quantum well from a carrier profile obtained by capacitance-voltage measurement. The procedure is applied to a pseudomorphic GaAs/InGaAs/GaAs strained layer structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354941
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  • 3
    Electronic Resource
    Electronic Resource
    Experimental characterization of a compact ECR ion source : Proceeding of the fourth International Conference on ion sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2556-2558 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A small ECR plasma source is experimentally evaluated. The compact, coaxial cavity source has an outer diameter of about 5.8 cm and is less than 15 cm in length, and can therefore be fitted on vacuum ports on existing MBE machines. Double- and single-Langmuir probes and an energy analyzer are used to measure ion density, electron temperature, plasma potential, and energy distributions at various downstream and cross-sectional positions in the plasma beam. The measurements are made for a variety of flow rates (2–30 sccm) and the corresponding pressures (from about 10−5 to 10−4 Torr), incident powers ranging from 80 to 164 W, and various gas types including argon and oxygen. The experimental measurements show that the ion source provides ion density of about 1011/cm3 at relatively low powers of 123 W and at sub-mTorr pressures. The ions created follow typical ambipolar diffusion out of the discharge creation region. Ions impinging downstream on a grounded substrate in an argon discharge show a narrow, peaked energy distribution that varies with pressure and power. Low-energy ion beams with energies less than 35 eV can easily be produced by varying the pressure and input power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142887
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  • 4
    Electronic Resource
    Electronic Resource
    Discharge characteristics of a 5 cm multipolar electron cyclotron resonance ion sourcea) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1749-1752 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact 5-cm-diam multipolar electron cyclotron resonance (ECR) ion source is characterized. The source is experimentally studied with no grids using argon gas with 50–250 W of 2.45-GHz microwave input power. Using a microcoaxial probe it was confirmed that the exciting electromagnetic fields within the resonant cavity were indeed TE111, as expected from the critical cavity dimensions. Double Langmuir probe measurements indicate high densities of about (4–5)×1011/cm3 near the source, and 5 cm downstream from the source output the densities become very uniform with a value of about 5×1010/cm3 over a 10-cm diameter. Electron energy distribution functions (EEDF) were measured using a single Langmuir probe. Average electron energies were seen to be about 8–10 eV with an energy distribution function falling between a Maxwellian and a Druyvesteyn distribution. Ion energy distribution functions (IEDF) were measured with a multigrid energy analyzer. It was seen that the distribution functions were narrow and peaked [with a full width half maximum (FWHM) of about 5 eV] except under certain conditions. Above 200-W input power, and also below about 0.5 mTorr there is significant broadening of the ion distribution function. It is speculated that the former may be caused by gas heating, and the latter may be caused by the presence of Ar+2 ions. With its high current densities ((approximately-greater-than)10 mA/cm2) and low average ion energies (〈40 eV), it is expected that this ion/plasma source will be very useful in many etching and deposition applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144871
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  • 5
    Electronic Resource
    Electronic Resource
    Discharge characteristics of a 5 cm multipolar electron cyclotron resonance ion source (abstract)a) : Proceedings of 5th international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1310-1310 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact 5-cm-diam multipolar electron cyclotron resonance (ECR) ion source is characterized. The source is experimentally studied with no grids using argon gas with 50–250 W of 2.45-GHz microwave input power. Using a microcoaxial probe it was confirmed that the exciting electromagnetic fields within the resonant cavity were indeed TE111, as expected from the critical cavity dimensions. Double Langmuir probe measurements indicate high densities of about (4–5)×1011/cm3 near the source, and 5 cm downstream from the source output the densities become very uniform with a value of about 5×1010/cm3 over a 10-cm diameter. Electron energy distribution functions (EEDFs) were measured using a single Langmuir probe. Average electron energies were seen to be about 8–10 eV with an energy distribution function falling between a Maxwellian and a Druyvesteyn distribution. Ion energy distribution functions (IEDF) were measured with a multigrid energy analyzer. It was seen that the distribution functions were narrow and peaked [with a full width half maximum (FWHM) of about 5 eV] except under certain conditions. Above 200-W input power, and also below about 0.5 mTorr there is significant broadening of the ion distribution function. It is speculated that the former may be caused by gas heating, and the latter may be caused by the presence of Ar+2 ions. With its high current densities ((approximately-greater-than)10 mA/cm2) and low average ion energies (〈40 eV), it is expected that this ion/plasma source will be very useful in many etching and deposition applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144990
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  • 6
    Electronic Resource
    Electronic Resource
    Initial results of the 2.45 GHz excitation of the superconducting ECR ion source in its high-B mode (abstract)a) : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 927-927 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The "frequency squared scaling'' law, relied upon to enhance the production of high charge state ions from electron cyclotron resonance (ECR) ion sources, indicates that low frequencies of operation may not be viable for production of high ion densities, and hence for the production of high charge state ions. The superconducting electron cyclotron resonance ion source (SCECR) at the National Superconducting Cyclotron Laboratory is a fully superconducting, hexapole stabilized tandem mirror ECR ion source with a multimode microwave cavity. When operated at its optimized high magnetic field (high-B) mode at 6.4 GHz, the high charge state current output of the SCECR approaches all existing ECR ion sources, including higher frequency ECR ion sources (ECRIS). In this study, the SCECR is operated at 2.45 GHz in its high-B mode that is scaled down for that frequency of operation. Initial results with oxygen and argon ion production at 2.45 GHz are presented. It is demonstrated that the SCECR can produce a plasma from which multiply charged ions of up to O7+ and Ar13+ can be extracted with ion current intensities comparable to several higher frequency ECRIS. This study concludes that 2.45 GHz is indeed a viable frequency for production of moderate intensities of multiply charged ions. This may lead to a simpler, and more cost effective microwave apparatus, with a less demanding magnetic field configuration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147235
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of frequency and magnetic field scaling on the superconducting electron cyclotron resonance ion source at MSU-NSCL (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 4109-4113 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A series of systematic tests have been carried out on the superconducting electron cyclotron resonance ion source SCECRIS at the Michigan State University National Superconducting Cyclotron Laboratory in order to better understand the role of different parameters which determine the performance of these sources. A relevant part of these tests has been focused on the role of magnetic field and microwave frequency, with the goal of demonstrating the capability of low frequency electron cyclotron resonance ion sources to produce high ion charge states, in spite of their relative low plasma density. This goal can be achieved using a very high magnetic confining field, according to the concept of a high B mode. A comparison of the source performance at 2.45 and 6.4 GHz for different levels of magnetic field is described in this article. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147556
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  • 8
    Electronic Resource
    Electronic Resource
    The study of a 2.45 GHz plasma source as a plasma generator for the SCECR electron cyclotron resonance ion source : Proceedings of 5th international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1135-1137 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The 2.45 GHz plasma source is a multicusp electron cyclotron resonance source with a tuned single mode microwave cavity. This is a bright plasma source with a well characterized operating mode and plasma parameters [A. K. Srivastava, et al., Rev. Sci. Instrum. 63, 2556 (1992); A. K. Srivastava and J. Asmussen, J. Vac. Sci. Technol. A 11, 1307 (1993)]. The superconducting electron cyclotron resonance (SCECR) is a fully superconducting, hexapole stabilized tandem mirror ion source with a multimode microwave cavity. It is a high charge state ion source with extensive beam diagnostics [T. A. Antaya, Nucl. Instrum. Methods B 40/41, 1024 (1989)]. The coupling of these two sources permits a number of fundamental studies important to both classes of ion sources. The 2.4 GHz plasma source will be used to study the effects of ion or electron (or both) density enhancement on the charge state distribution, total extracted current, and ion energy distributions of the SCECR. The SCECR in turn will be used as a test stand to measure directly the ion distribution and beam characteristics of the 2.45 GHz plasma source. The first results with this hybrid ion source will be presented at this conference.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145038
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  • 9
    Electronic Resource
    Electronic Resource
    Modeling the electromagnetic excitation of a compact ECR ion/free radical source (abstract)a) : Proceedings of 5th international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1312-1312 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The electromagnetic excitation of a discharge inside a microwave plasma source has been numerically modeled in the time domain. The source is a cylindrical, single-mode microwave-excited cavity. The time-varying electromagnetic fields inside the resonant cavity, both inside and outside the discharge region, are obtained by applying a finite-difference time-domain method to solve Maxwell's equations. The electromagnetic properties of the discharge load are described using a conductivity model. The spatial electric field patterns, natural frequencies, stored energy, and quality factor of a plasma-loaded, microwave-resonant cavity are simulated. Additionally, the simulated results for a simplified plasma source structure are compared to a known analytical solution to verify the simulation technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144993
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  • 10
    Electronic Resource
    Electronic Resource
    Reduction in linewidth enhancement factor for In0.2Ga0.8As/ GaAs/Al0.5Ga0.5As strained quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2198-2199 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linewidth enhancement factor α as low as 0.54 in In0.2Ga0.8As/GaAs/AlGaAs strained single quantum well lasers emitting at 0.97 μm has been measured from spontaneous emission spectra below threshold. On reducing the current further, α goes down to 0.34. These low values of α have been attributed to strain in the In0.2Ga0.8As active layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104925
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