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  • 1
    Electronic Resource
    Electronic Resource
    GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2018-2020 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New GaAs quantum dot structures, called tetrahedral quantum dots (TQDs), are proposed to make a zero-dimensional electron-hole system. The TQDs are surrounded by crystallographic facets fabricated using selective area metalorganic chemical vapor deposition (MOCVD) on (111)B GaAs substrates. The calculated energy sublevel structures of zero-dimensional electrons in a GaAs TQD show large quantum size effects, because electrons are confined three dimensionally. GaAs and AlGaAs tetrahedral facet structures on (111)B GaAs substrates partially etched into a triangular shape were grown using MOCVD. Tetrahedral growth with {110} facets occurs in the triangular areas. The cathodoluminescence intensity map for GaAs tetrahedrons buried in AlGaAs shows the tetrahedral dot array.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105026
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence properties of 13×13 nm GaAs quantum wires buried in trench structures reduced by growing GaAs/AlAs superlattice layers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1087-1089 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report lateral-size control of GaAs/AlAs trench-buried quantum wires (QWRs) on a scale of 10 nm by metalorganic chemical vapor deposition using nonplanar substrates. The lateral width is reduced to 12–13 nm by growing GaAs/AlAs superlattice layers (SLs) on the (110) sidewall facets of the trenches, where the roughness of the SL sidewalls is approximately several monolayers. Low-temperature photoluminescence (PL) properties of nearly square 13×13 nm QWRs buried in the trenches exhibit a strong PL blue shift of 85 meV with respect to the band-gap energy of GaAs bulk and PL polarization anisotropy of 25% due to two-dimensional quantum confinement effects. The emission from Ga-rich AlGaAs regions in the trenches constituting AlGaAs vertical quantum wells was also observed. We demonstrate that substituting GaAs/AlAs SLs for the AlGaAs layer effectively eliminates the undesired emission levels caused by the inevitable Al content fluctuation in the AlGaAs layer grown on nonplanar structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114470
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of GaAs/AlAs trench-buried multiple quantum wires by metalorganic chemical vapor deposition on V-grooved substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3299-3301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication of GaAs/AlAs multiple trench-buried quantum wires (TBWs) by metalorganic chemical vapor deposition on V-grooved substrates. The shape of AlAs layers grown on the V-grooves can be changed significantly from a V-shape to U-shape by varying growth temperatures and group-V/III ratios. 30-nm-wide and 100-nm-deep AlAs trenches with nearly vertical sidewalls are formed at the growth temperature of 650 °C with the group-V/III ratio of 165, while V-shaped AlAs grooves are formed at 700 °C with the V/III ratio of 110. Vertically stacked double TBWs are formed using the 30-nm-wide trenches. The low-temperature (15 K) photoluminescence spectrum for the double TBWs shows two distinct emission peaks corresponding to the 6.5- and 8.0-nm-thick wires.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111972
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  • 4
    Electronic Resource
    Electronic Resource
    GaAs/AlAs trench-buried quantum wires with nearly rectangular cross sections grown by metalorganic chemical vapor deposition on V-grooved substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 472-474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs trench-buried quantum wires were fabricated by using U-grooved AlAs trenches grown on V-grooved (001) substrates. These trench structures with vertical (110) sidewalls were formed by the faceting of (110) planes, and lateral growth of these planes reduced the trench width to less than 20 nm. A cross-sectional scanning electron microscope image of these trench-buried structures showed GaAs wires about 20 nm wide and 20 nm thick. The growth of these wires is enhanced by the capture of Ga species into the trenches. Blueshifts and strong anisotropy of photoluminescence confirm two-dimensional quantum confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111133
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence excitation spectra in GaAs/AlAs trench-buried quantum wires with 20 nm wide rectangular cross-sectional shapes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 364-366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarization-dependent photoluminescence excitation spectra (PLE) are measured in GaAs/AlAs rectangular trench-buried quantum wires (QWRs) with 20 nm width and various thicknesses. Experiments demonstrate that the polarization properties of the PLE spectra, which have several clear peaks corresponding to the optical transitions between quantized conduction and valence subbands, significantly depend on the cross-sectional ratios of the rectangular wires. Quantum indices of these transition levels are assigned by comparing the experiments with theory. The distinctive optical features of the QWRs with the rectangular cross sections are discussed in relation to the characteristics of one-dimensional valence subbands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116717
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  • 6
    Electronic Resource
    Electronic Resource
    GaN hexagonal microprisms with smooth vertical facets fabricated by selective metalorganic vapor phase epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2196-2198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective growth of GaN was performed by low-pressure metalorganic vapor phase epitaxy using a mask-patterned GaN epitaxial layer on a (0001) sapphire substrate. GaN hexagonal microprisms of 5–16 μm in diameter, with smooth vertical facets and no ridge growth, were fabricated on a (0001) sapphire substrate. This vertical {11¯00} facet of GaN was parallel to a {112¯0} face of the sapphire substrate. Both the use of an epitaxial GaN layer on the sapphire substrate and low working pressure contributed to obtaining smooth top and vertical facet surfaces. Also, the stripe structures of GaN were obtained that had a rectangular cross section. Moreover, the selection of the mask-patterning direction was found to be important because of the 30° rotation of the crystallographic orientation between the GaN layer and the sapphire substrate. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119379
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  • 7
    Electronic Resource
    Electronic Resource
    Characteristics of carotenoid distribution in various tissues from red- and white-fleshed chinook salmon, Oncorhynchus tshawytscha (Walbaum) (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Aquaculture research 25 (1994), S. 0 
    Details
    ISSN: 1365-2109
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract. Carotenoid distribution was examined in muscle, ovary, integument and serum from red- and white-fleshed chinook salmon, Oncorhynchus tshawytscha (Walbaum), along with their muscle proximate compositions. There were no significant differences in muscle compositions of moisture, protein and lipid except for the carotenoid levels between red- and white-fleshed salmon. Similar carotenoid levels of ovaries were found between red- and white-fleshed chinook salmon, although the muscle carotenoid level of white-fleshed salmon was apparently low compared to red-fleshed salmon. This suggests that white-fleshed chinook salmon have the ability to accumulate the carotenoids in their ovaries but not muscle. The white-fleshed chinook salmon may be devoid of carotenoid receptors in their muscle and this seems to be the reason for the failure to accumulate the carotenoids in their muscle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2109.1994.tb00671.x
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  • 8
    Electronic Resource
    Electronic Resource
    Identification of the second major allergen of Japanese cedar pollen (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Allergy 45 (1990), S. 0 
    Details
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: We isolated and characterized the second major allergen (Cry j II) from Japanese cedar pollen. We found that most patients with this pollinosis had IgE antibody to this protein in addition to IgE antibody to Cry j I; however, some sera reacted only with Cry j I or Cry j IL IgE-ELISA inhibition studies revealed that Cry j I and Cry j II had no cross-allergenicity. Cry j II did not react with anti-Cry j I monoclonal antibodies. In SDS-PAGE under a non-reducing condition. Cry j II showed a band at the 37 kDa position, compared with the 45–50 kDa bands of Cry j I. N-terminal amino acid sequence of Cry j II was completely different from that oi Cry j I.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1398-9995.1990.tb00501.x
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  • 9
    Electronic Resource
    Electronic Resource
    Application of a newly developed 3-D deformation measurement system to prosthetic dentistry (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of oral rehabilitation 23 (1996), S. 0 
    Details
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: summary A new system for measuring threedimensional deformation has been developed. The main components of the system are a fixed TV camera and vertically scanning projectors. The advantages of the system are: (1) since there is no mechanical contact between the object and the sensing unit, hardness and form of the object do not have to be considered; (2) the system does not need any precise geometry except for the reproducibility of the vertical scanning stage; (3) the time required for one measurement is extremely short; and (4) the system is not expensive. From the basic experiments for testing accuracy, this system has about ± 30 μm range deviation against 1000 μm deformation of the object. The system has been applied to investigate the influence of various impression procedures for a removable partial denture on the displacement of the simulated soft mucosal tissue. It is revealed that deformation forms are expressed precisely. Our results suggest that this measurement system is quite useful for research in dentistry and that it could be widely applied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2842.1996.tb00843.x
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  • 10
    Electronic Resource
    Electronic Resource
    A clinical study of Japanese patients with ulcer induced by low-dose aspirin and other non-steroidal anti-inflammatory drugs (2005)
    Oxford, UK : Blackwell Publishing Ltd
    Alimentary pharmacology & therapeutics 21 (2005), S. 0 
    Details
    ISSN: 1365-2036
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background : The incidence and severity of non-steroidal anti-inflammatory drugs (NSAIDs)-induced gastro-duodenal ulcer have not been extensively studied in Japan.Aim : We performed a prospective study to clarify NSAIDs-induced gastro-duodenal injury, focusing especially on low-dose aspirin (L-A).Methods : Two hundred and thirty-eight patients with bleeding peptic ulcers admitted to our hospital. History of taking NSAIDs and anti-ulcer drugs was obtained from all patients who underwent endoscopic examinations. The lesion scores of patients taking L-A were classified numerically from zero (no lesion) to five (ulcer).Results : The NSAIDs were associated with 28.2% of hemorrhagic ulcers. The rates of patients using L-A, loxoprofen, diclofenac, and combination of two of these drugs were 27, 16, 10 and 9%, respectively. Co-administered anti-ulcer drugs were cytoprotective anti-ulcer drugs (27%), H2 receptor antagonists (16%), PPI (4%), and none (53%). In patients taking L-A, H2 receptor antagonists were used most frequently. The HP was positive in 63% of L-A-induced ulcer cases and in 69% of NSAIDs other than low-dose aspirin-induced ulcer cases. The lesion scores of patients taking L-A with H2 receptor antagonists or PPI were significantly lower than those of patients who were taking only L-A (P 〈 0.05).Conclusions : Approximately one-third of hospitalized patients with NSAIDs-induced hemorrhagic ulcer showed an association with L-A. Prospective randomized controlled trials including H2 receptor antagonists are required to establish preventive efforts aimed at L-A-induced gastro-duodenal injury.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2036.2005.02476.x
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