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  • 1
    Electronic Resource
    Electronic Resource
    Analysis of C films formed on single-crystal Cu by ion implantation and laser annealing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3485-3491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal Cu has been ion implanted with C to fluences of 1×1018/cm2 followed by laser annealing with nanosecond pulses from an excimer laser and subsequently etched in dilute nitric acid. Raman spectroscopy, Rutherford backscattering, and electron microscopy have been used to identify the distribution and morphology of the carbon at different stages of sample processing. Polycrystalline graphite and amorphous carbon films are typically produced over a wide range of processing conditions; well-ordered graphite can be formed as well. Small Cu crystallites are seen in areas where the etch lifted the C films off the substrate. However, extensive analysis by Raman spectroscopy and electron microscopy provides no evidence for the formation of the diamond phase of carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351425
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  • 2
    Electronic Resource
    Electronic Resource
    Damage and deuterium trapping in highly-oriented pyrolytic graphite (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2225-2233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work the buildup of damage due to deuterium implantation in highly-oriented pyrolytic graphite (HOPG) is investigated. HOPG was implanted with 10–30 keV D3+ at different target temperatures between room temperature and 773 K with fluences from 1014 to 1018 D/cm2. Subsequently, the damage due to the implantation and the retained deuterium were measured by Rutherford backscattering (RBS) in a channeling direction (RBSc) and by the D(3He, p)α nuclear reaction analysis (NRA), respectively. The damage of selected samples was additionally observed with transmission electron microscopy (TEM). The initial trapping efficiency is unity in the whole temperature and energy range. The maximum retention of the deuterium, however, depends on the temperature and implantation energy. The damage in HOPG measured with RBSc starts to saturate at 5×1015 D/cm2 (295 K) and 1.3×1017 D/cm2 (773 K). Both fluences are well below the fluence at which amorphization is observed in TEM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353126
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  • 3
    Electronic Resource
    Electronic Resource
    Low-temperature mesotaxy of ion beam synthesized ErSi2 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1853-1855 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High doses (7×1016–1.3×1017/cm2) of 170-keV Er+ ions were implanted into single-crystal Si at an implantation temperature of Ti=520 °C. During Er implantation ErSi2 crystallizes as coherent precipitates within a crystalline Si matrix. During the subsequent annealing at 800 °C a discontinuous buried layer of the single crystalline ErSi2 is formed. Implanted and annealed samples were subsequently reimplanted with 170-keV Er+ ions at 250〈Ti〈520 °C. The second implantation results in a mesotaxial growth of the previously formed buried single-crystal ErSi2 layer for implantation temperatures Ti(approximately-greater-than)300 °C where ion beam induced, defect mediated diffusion of Er atoms in the Si matrix occurs during the implantation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349504
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  • 4
    Electronic Resource
    Electronic Resource
    Atomic Structure of a 36.8 (210) Tilt Grain Boundary in TiO2 (1997)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 80 (1997), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: An understanding of the atomic structure at internal interfaces is of crucial importance for the electronic and structural properties of most advanced materials. Here, we present a detailed study of the atomic structure at a [001] tilt grain boundary of σ5(210) in Tio2 (rutile). Z-contrast imaging is used to obtain a 2-D atomic map of the cation positions at the interface. Details of the charge state of cations and atomic structure around anion sites are then provided using electron energy loss spectroscopy. In particular, the spectroscopic data for oxygen is interpreted using multiple scattering theory to give 3-D structural information. These combined techniques allow a unique grain boundary structure to be defined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1997.tb02857.x
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  • 5
    Electronic Resource
    Electronic Resource
    Plume-induced stress in pulsed-laser deposited CeO2 films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2134-2136 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual compressive stress due to plume-induced energetic particle bombardment in CeO2 films deposited by pulsed-laser deposition is reported. For laser ablation film growth in low pressures, stresses as high as 2 GPa were observed as determined by substrate curvature and four-circle x-ray diffraction. The amount of stress in the films could be manipulated by controlling the kinetic energies of the ablated species in the plume through gas-phase collisions with an inert background gas. The film stress decreased to near zero for argon background pressures greater than 50 mTorr. At these higher background pressures, the formation of nanoparticles in the deposited film was observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123780
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  • 6
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of Ge films on (100) GaAs by pyrolysis of digermane (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 858-860 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pyrolysis of high-purity digermane (Ge2 H6 ) has been used to grow epitaxial Ge films of high crystalline quality on (100) GaAs substrates in a low-pressure environment. X-ray double-crystal diffractometry shows that fully commensurate, coherently strained epitaxial Ge films can be grown on (100) GaAs at digermane partial pressures of 0.05–40 mTorr for substrate temperatures of 380–600 °C. Amorphous films also were deposited. Information about the crystalline films surface morphology, growth mode, and microstructure was obtained from scanning electron microscopy, cross-section transmission electron microscopy, and in situ reflectivity measurements. The amorphous-to-crystalline transition temperature and the morphology of the crystalline films were both found to depend on deposition conditions (primarily the incidence rate of Ge-bearing species and the substrate temperature). Epitaxial growth rates using digermane were found to be about two orders of magnitude higher than rates using germane (GeH4 ) under similar experimental conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101777
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of low dislocation density silicon-on-insulator by a single implantation and annealing (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 156-159 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality silicon-on-insulator structures have been formed with dislocation densities in the top silicon layer below 104 cm−2 by oxygen implantation and one-step annealing at 1300 °C for 6 h. Careful control of the implantation conditions is required in order to produce a high density of cavities in the top silicon layer. These cavities provide a stress-free sink for silicon and oxygen interstitials, reducing the point-defect supersaturations and, therefore, the nucleation and growth of oxide precipitates and dislocation loops. They also provide an internal surface which blocks free propagation of dislocation loops to the surface avoiding the formation of threading dislocations. With continued annealing, both the cavities and the oxide precipitates eventually dissolve, leaving a high quality silicon surface layer with a very low dislocation density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104213
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  • 8
    Electronic Resource
    Electronic Resource
    Excimer laser induced oxidation of ion-implanted silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1720-1722 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated laser-induced oxidation of ion-implanted Si using a repetitively pulsed ArF laser, working at low-energy density (100–500 mJ/cm2). Oxidation is observed at energy densities between the melt threshold and that required for epitaxial recrystallization of the amorphous layer. At these energy densities, oxidation is not observed on virgin silicon. The factors that influence the oxidation process are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99805
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  • 9
    Electronic Resource
    Electronic Resource
    New model for damage accumulation in Si during self-ion irradiation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2503-2505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the damage produced by self-ion implantation in Si on dose is determined and is shown to exhibit two distinct behaviors: an initial sublinear increase of damage with dose, followed by a period of greatly accelerated growth. Ion backscattering analysis using both single- and double-alignment channeling measurements is used to determine the distribution of damage in the samples. The nature of the damage is determined from its thermal annealing behavior and differences in the spectra recorded in the two channeling configurations. Damage is found to consist predominantly of two components: simple defects, such as divacancies, and regions of amorphous Si. The behavior of these components is shown to be divergent at the fluence which separates the two different growth regimes. A model is proposed which considers the amorphization process in Si as a critical-point phenomenon, one in which the onset of amorphization leads to a cooperative behavior among the various types of damage resulting in a greatly accelerated transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102011
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  • 10
    Electronic Resource
    Electronic Resource
    Heteroepitaxy of GaAs on Si and Ge using alternating, low-energy ion beams (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1439-1441 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystalline GaAs films have been grown epitaxially on silicon and germanium substrates at 400 °C by direct deposition of alternating 69Ga and 75As layers from electromagnetically switched low-energy ion beams. Positive gallium and arsenic ions were extracted simultaneously from a single ion source and mass analyzed prior to deceleration to a controlled deposition energy of 30 or 40 eV. Atomic layers of gallium and arsenic were deposited alternately by switching the analyzing magnetic field repeatedly to select either the 69Ga+ or 75As+ species. The structure and composition of the resulting layers have been characterized by cross-section transmission electron microscopy and ion channeling/backscattering spectrometry. The best crystal quality was obtained for a GaAs layer deposited on Ge using a 30 eV beam. This layer gave an ion channeling minimum yield of ≈6%. These results demonstrate the feasibility of growing isotopically pure, single-crystal compound semiconductor layers at relatively low temperatures by deposition from alternating, fully ionized, low-energy beams.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100690
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