Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Energy Storage (1976)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Environment and Resources 1 (1976), S. 311-343 
    Details
    ISSN: 0362-1626
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.eg.01.110176.001523
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    New techniques of magnetic surface measurement on the compact Auburn torsatron : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 464-466 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Torsatron and stellarator plasma devices rely on magnetic surface mapping to verify the detailed vacuum magnetic field structure. Two new techniques of magnetic surface mapping are under development on the compact Auburn torsatron. The first is a fast-rotating fluorescent wire (FRFW) system. Compared with the usual fluorescent screen, fluorescent rod, or the capacitive point probe techniques, the FRFW system has the advantage of greatly increasing the number of detectable toroidal transits and of minimizing surface mapping time. The second technique is a resistive wire system which provides an alternative fast-field mapping method. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146384
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Random-exchange and random-field xy chain for s=1/2 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3959-3961 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One of the points of interest in the study of random systems is the nature of the eigenstates, i.e., exponentially localized or extended, and the density of states. To identify the disorder-induced effects, we consider the one-dimensional s=1/2 xy models with random exchange, or random field. Using the transformation to spinless fermions, the problem is reduced to a nonlinear map, providing accurate numerical estimates for the integrated density of states and the exponential localization length. The results clearly reveal: (i) appearance of disorder-induced tails in the integrated density of states at the bottom and top of the spectrum, yielding to a characteristic field dependence of magnetization and susceptibility at zero temperature; and (ii) important differences between random-exchange and random-field models. In the random-exchange case, the middle of the band is found to be extended, while in the random-field case, corresponding to the standard Anderson model, all states are exponentially localized. This difference also affects the temperature dependence of zero-field specific heat and susceptibility as T→0.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338569
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Exchange biasing and thermal stability of CoFe/PtPdMn films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4915-4917 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two sets of PtPdMn exchange biased films Ta 50 Å/CoFe 100 Å/PtPdMn (tAF) Å/Ta 50 Å, with PtPdMn thickness, tAF=350, 600 Å, were deposited on Si substrates by dc magnetron sputtering techniques. After magnetic annealing, these two sets of films exhibited values of exchange bias field, Hex=229 and 254 Oe, respectively. The PtPdMn layer was then thinned to various thicknesses from 600 down to 50 Å by ion beam etching. Hex does not retain its original value. It decreases with decreasing tAF and becomes zero at tAF∼75 Å. In addition, we have observed that the training effect or the anomalous hysteresis loss becomes more pronounced with decreasing tAF. This confirms that not only face-centered-tetragonal phase but, more critically, tAF plays role in determining exchange biasing and its thermal stability. The blocking temperature, TB, appears unaffected by the thinning of the PtPdMn layer, and no apparent change occurs in the local blocking temperature distribution, as suggested by the finite size effect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373201
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Magnetic properties of ultrathin NiFe and CoFe films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6618-6620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report the magnetic properties of ultrathin (15–200 Å) NiFe and CoFe films deposited using ion beam deposition techniques. They are symmetrically sandwiched between Ta, Cu, or Ta/Cu under and capping layers. NiFe and CoFe films grown between Ta/Cu and Cu/Ta bilayers exhibit the smallest magnetic thickness loss of about 1 Å. This interfacial magnetic dead layer thickness, t0, is about 5 Å for Cu-sandwiched films and about 15 Å for Ta-sandwiched films. As the film thickness becomes thinner than 100 Å, the magnetic properties are found to be more sensitive to the choice of material and growth environment. CoFe films show an interfacial contribution, λi, about ten times larger than that for NiFe films. Among others, NiFe and CoFe films sandwiched by Ta/Cu and Cu/Ta bilayers exhibit the smallest values of λi. The magnetic anisotropy in Ta-sandwiched CoFe films appears to be predominantly magnetoelastic in nature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372789
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Magnetism and segregation in Fe-Cr-Mn : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6559-6561 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-Cr-Mn alloys with 10 at. % Mn have similar structural and magnetic properties as Fe-Cr alloys, but have considerably higher Néel temperatures for the same Fe/(Fe+Cr) content ratio. When segregated, the high Néel temperatures of Fe-Cr-Mn alloys make it possible to investigate the magnetic nature of the Cr- and Fe-rich components. Resistivity and magnetization measurements show distinct features that correspond to a superposition of the properties of the individual segregated components.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349882
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Morphology of Si(100) surfaces exposed to a remote H plasma (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2194-2196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This study addresses the formation of roughness and near surface defects on Si(100) surfaces that are exposed to a remotely excited H plasma. The remote H plasma processing can be employed for in situ wafer cleaning. Atomic force microscopy, transmission electron microscopy, and residual gas analysis are used to measure the surface roughness, the near surface defects, and the etching, respectively. For remote H plasma exposures at substrate temperatures ≤300 °C, etching is observed along with a significant increase in the surface roughness and the formation of platelet defects in the near surface region. As the substrate temperature is increased to above 450 °C, etching is significantly reduced and no subsurface defects or increases in surface roughness are observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115100
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Anti-Invar in Fe-Ni : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7015-7017 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anti-Invar behavior in a material can be characterized by an anomalously large and a weak temperature-dependent thermal-expansion coefficient, when compared to the respective Grüneisen lattice expansion. It is just the opposite of the Invar effect, which is characterized by an anomalously small thermal-expansion coefficient. Common to Invar and anti-Invar is the fact that both posess moment-volume instabilities. Anti-Invar is observed in the paramagnetic state. It occurs in γ-Fe and in a number of 3d fcc binary and ternary alloys. In FexNi100−x alloys it is observed in the concentration range 70≤x≤100 at. % within the fcc stability range. The effect vanishes as the Invar concentration, x=65 at. %, is approached. To examine the valence electron concentration dependence of the anti-Invar effect the thermal expansion has been measured in the fcc state of FexNi100−x for 63≤x≤100 at. %. Using a model based on moment-volume instabilities in conjunction with a thermal activation process the size of the anti-Invar effect in these alloys has been determined. The volume enhancement is found to decrease with increasing Ni concentration from 2.8% in γ-Fe to 0% at x=65 at. %.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356761
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Surface electronic states of low-temperature H-plasma cleaned Si(100) (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1995-1997 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface of low-temperature H-plasma cleaned Si(100) was studied by angle-resolved UV photoemission spectroscopy. The cleaning process involved an ex situ wet chemical preclean followed by an in situ H-plasma exposure at a substrate temperature of 300 °C. After the in situ H-plasma exposure, a 2×1 ordered surface was obtained which exhibited two hydrogen-induced surface states/resonances in the UV photoemission spectra. The temperature dependence of the spectra showed that the Si-H monohydride started to dissociate at a temperature below 500 °C, and the dangling-bond surface states were identified. The spectroscopic properties of the low-temperature H-plasma surface were essentially identical to surfaces prepared by ultrahigh vacuum high-temperature annealing followed by H passivation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106161
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Identification of the cAMP-Specific Phosphorylation Site of the Purified Skeletal Muscle Receptor for Calcium-Channel Blockers (1989)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 560 (1989), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1989.tb24119.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...