ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Due to the high critical field in 4H-SiC, the drain charge and switching loss densities in a SiC power device are approximately 10X higher than that of a silicon device. However, for the same voltage and resistance ratings, the device area is much smaller for the 4H-SiC device. Therefore, the total drain charge and switching losses are much lower for the 4H-SiC power device. A 2.3 kV, 13.5 mW-cm2 4H-SiC power DMOSFET with a device area of 2.1 mm x 2.1 mm has been demonstrated. The device showed a stable avalanche at a drain bias of 2.3 kV, and an on-current of 5 A with a VGS of 20 V and a VDS of 2.6 V. Approximately an order of magnitude lower parasitic capacitance values, as compared to those of commercially available silicon power MOSFETs, were measured for the 4H-SiC power DMOSFET. This suggests that the 4H-SiC DMOSFET can provide an orderof magnitude improvement in switching performance in high speed switching applications
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.797.pdf
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