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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2722-2724 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study theoretically the wave functions and dispersion relation of electrons in grid-inserted GaAs quantum-well structures, where very thin AlAs rods are periodically inserted in the middle of quantum wells with a typical spacing of 100 A(ring). It has been found that when the grid thickness is even a few monolayers, the electronic motion along the lateral direction is strongly modified, resulting in the formation of both quantum-wire states and in-plane superlattice states. For example, when the width and spacing of the grid are 81 A(ring), the ground miniband width becomes as small as 12 meV for the grid thickness of one monolayer (ML) and can be further reduced to 4 meV when the grid thickness is 5 ML. It is further shown that the effect of grid potential is strongly dependent on the shape of the wave functions, and the lateral confinement is effective only for those having high amplitude in the central portion of the quantum well.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3189-3193 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Distributed Bragg reflectors (DBRs) for the visible-light spectral region constructed by InAlP/InGaAlP pairs and InAlP/GaAs pairs, grown by metalorganic chemical-vapor deposition, have been investigated with the point of comparing optical and structural properties. In the case of the InAlP/InGaAlP stacked type, a reflectivity above 80% has been realized; however, the bandwidth decreased by shortening the peak wavelength. The reflection spectrum of the InAlP/GaAs DBR showed a wide-band characteristic and provided a relatively high reflectivity to the green region in spite of the absorption loss of the GaAs layers. These results were in good agreement with theoretical calculations considering the absorption loss and refractive index of individual stacked layers. These DBRs have also been confirmed to have good uniformity and periodicity through cross-sectional transmission electron microscopy and x-ray rocking curve analysis. Good electrical conductivity through these DBRs has been obtained for the n-type structure.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1010-1012 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-efficiency InGaAlP surface emission light emitting diodes (LEDs) have been successfully fabricated. Newly designed double-heterostructure LEDs with a GaAlAs current spreading layer were employed to expand the light emission area, which is necessary to take out the light efficiently. The external quantum efficiency was 1.5% at 620 nm orange light for an In0.5 (Ga0.8Al0.2)0.5P active layer LED. This LED is five times more efficient at 620 nm than that of the GaAlAs and GaAsP LEDs. 563 nm green electroluminescence, which is the shortest wavelength ever reported for InGaAlP LEDs, was also achieved with an In0.5(Ga0.5Al0.5)0.5P active layer.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2093-2105 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Models capturing the periodic steady-state behavior of rf capacitively coupled discharges are now commonplace. New plasma sources have been motivated by selectivity, charge-damage mitigation, and general process control needs in plasma processing of electronic materials. These new sources require models that can accurately capture the transient behavior of the plasma source. Such models are not commonplace because the behavior of transport parameters in transients is still not well understood and because the problem is inherently stiff, i.e., widely disparate time scales are important. In this paper, we present the results of an investigation of the simplest type of transient, known as a step disturbance, in a 2 cm gap parallel-plate argon discharge at 1 Torr. As examples, two classes of step transients are considered: step increases in the peak-to-peak (pp) applied voltage (300 to up to 450 V pp) and step decreases (300 to as low as 150 V pp). The resulting transients are interpreted in terms of time scales representative of electron and ion motion in the sheath, ionization dynamics, and neutral transport processes. The possibility of using these transients as a means of process identification is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a fast measuring system of energy dispersive x-ray diffraction intensity. A solid state detector (SSD) has been used to measure the energy dispersive x-ray diffraction intensities. The energy resolution of SSD is almost ten times higher than that of a scintillation counter or proportional counter. For full use of SSD, a fast processing system of the signal is needed, especially when x rays from synchrotron radiation (SR) are used. When SSD is used for x rays from SR, however, we have two problems. One is that the dead time of conventional signal processing system is long, which prevents the efficient use of synchrotron radiation source. The other is that a fast data recording system is needed, because the number of data of a single diffraction spectrum is large. To solve these two problems, we have designed a new measuring system. The system consists of a personal computer and an interface board of multichannel analyzer function. The interface consists of peak hold, fast ADC, memory, add one, and DMA. (1) Improvement of the dead time. We adopted a successive approximation ADC to shorten the conversion time. The dead time is then 2 μs in the present system, which is much shorter than that of the Wilkinson ADC (about 40 μs). (2) Fast data recording. In most conventional MCA, the memory of MCA is separated from that of computer and the data are transferred between MCA and computer. In this case, the data are transferred by GP-IB or RS232C, and the data transfer time is several ten seconds. In the present system, the same memory is accessed by MCA and computer and the data transfer time is zero. This fast measuring system has already been installed at Photon Factory, KEK and utilized to measure the energy dispersive diffraction intensities. We have observed Pendellösung fringe induced by x-ray resonant scattering to make use of this system.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 323-326 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A pulsed power supply has been developed for exciting a copper vapor laser with a bore diameter of 80 mm and a discharge length of 2890 mm. The pulsed power supply has two thyratrons, an LC-inversion circuit and a two-staged magnetic pulse compression circuit. An efficiency of 82% has been obtained which is defined as the ratio of energy stored in the storage capacitor to the output energy of the magnetic pulse compression circuit, with a voltage greater than 40 kV, averaged output power of 24 kW, and voltage rise time of 70 ns. The pulsed power supply was successfully operated for more than 2000 h and an optical output power of 272 W was obtained.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new VUV beamline at the Photon Factory ring that is designed to accept radiation emitted from an undulator is described. The characteristics of the undulator and all parts of the beamline; a front end, a mirror system, and two monochromators, are described in detail. The characteristics of optical elements in the beamline are also shown.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 424-426 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A remarkable change in photoluminescence spectra was observed when CO2 laser light was incident to induce an intersubband transition in a novel asymmetric double quantum well structure where the second subbands of both wells are resonantly coupled, while the ground subbands are not. It is found that the observed change originates from the CO2-laser-induced transfer of electrons from one well to the other, demonstrating the controllability of electron population by means of infrared light.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1775-1777 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Candela class InGaAlP surface-emission green light-emitting diodes (LEDs) have been successfully fabricated. The growth of InGaAlP on an intentionally misoriented substrate improved emission properties, as confirmed by a quantitative estimation of the diffusion length in the active material. A Bragg reflector using InGaAlP was realized for the first time. A new device structure, including this Bragg reflector, drastically improved the light extraction efficiency. An external quantum efficiency of 0.7% at 573 nm green light was obtained, corresponding to a luminous intensity of 2 cd.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 719-721 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intersubband light absorption measurements have been performed on a series of GaAs/AlAs quantum wells with heavy delta doping of Si atoms in the range 9.0×1011–6.5×1012 cm−2. The increase of intersubband transition energy by as much as 38 meV has been observed, and attributed to the deepening of the V-shaped potential by the Si layer and to the depolarization effects. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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