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  • 1
    Electronic Resource
    Electronic Resource
    Isochronal annealing of local vibrational modes in proton- and deuteron-implanted InP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 78-83 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed isochronal annealing experiments on the hydrogen-related local vibrational modes (LVMs) created by proton and deuteron implantation of InP. Implanted samples were annealed in 50 °C increments in the 200–600 °C temperature range for 30 min each and then measured by infrared absorption. A group of four different LVMs is observed, each of which arises from the hydrogen-phosphorus stretching vibration with different defects or impurities at nearest-neighbor sites. Each LVM exhibits an annealing behavior that is different than any of the other LVMs. The annealing results are shown and discussed in relation to the possible microscopic structure of the defect responsible for each LVM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353832
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  • 2
    Electronic Resource
    Electronic Resource
    Lattice dynamics of II-VI based diluted magnetic semiconductors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4332-4334 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of far infrared reflectivity and Raman scattering spectra reported recently in Hg1−xMnxTe samples with low composition of Mn impurities are analyzed theoretically. The Kramers–Kronig analysis in the spectral range (50–350 cm−1 ) is employed to obtain the proper energetic positions of the two optical phonons and a weak peak near ∼98 cm−1 (above the longitudinal acoustic-phonon band of HgTe). Simple schemes, based on the so called "oscillator fit'' and modified random element isodisplacement models, are chosen with appropriate values of transition energies and strengths to reproduce the observed reflectivity spectra. A comprehensive calculation of the lattice dynamics in terms of semi-empirical Green's function theory has provided convincing arguments that the feature near 98 cm−1 is a gap mode of Mn in HgTe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346206
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  • 3
    Electronic Resource
    Electronic Resource
    Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 594-596 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission and reflection spectra of GaN have been investigated in the intrinsic region and the data have been interpreted in terms of the wurtzite crystal band structure. Three intrinsic exciton transitions have been observed, one associated with each of the valence bands. Exciton excited states associated with the two top valence bands were also observed. The exciton binding energies, the band-gap energies, and the exciton Bohr radii are all reported along with the dielectric constant and the spin-orbit and crystal-field parameters for GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362724
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  • 4
    Electronic Resource
    Electronic Resource
    Incorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 294-296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole concentrations in excess of 1020 cm−3 have been achieved in AlxGa1−xAs using carbon doping during metalorganic molecular beam epitaxy. Hall and secondary-ion mass spectrometry measurements show a 1:1 correspondence between the hole density and carbon concentration in as-grown samples, although post-growth annealing at 900 °C leads to a reduction in the net free-carrier concentration (typically a decrease of ∼40% for 30 s anneals). The carbon-localized vibrational modes (LVMs) show fine structure due to the presence of three different symmetries for substitutional carbon CAs, namely Td, C2v, and C3v. The experimental CAs LVM line positions are in remarkable agreement with the predictions of a rigid ion model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103718
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  • 5
    Electronic Resource
    Electronic Resource
    New evidence of small lattice relaxation for the DX center in AlxGa1−xAs (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1358-1360 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local structure of isolated Si impurity in GaAs and AlAs is studied using a parameter-free semi-empirical tight binding method. It is predicted that nearest neighbor As atom around the impurity moves toward SiGa(Al) causing a 6.54% (5.73%) change in GaAs(AlAs) bond length. An estimation of lattice distortion energy 0.02±0.003 eV (0.025±0.003 eV) for GaAs:Si (AlAs:Si) is found in good qualitative agreement with the value obtained by J. C. M. Henning and J. P. M. Ansems [Semicond. Sci. Technol. 2, 1 (1987)] from the photoionization of the DX center in lightly doped Si impurities in Al0.33Ga0.67As. The fits for the observed maxima in the optical cross section and the calculation of the pressure-dependent thermal barrier energy lend support for the small lattice relaxation models and cast doubt on the validity of those with the large lattice relaxation usually recommended for this class of centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98678
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  • 6
    Electronic Resource
    Electronic Resource
    High-resolution infrared absorption measurements of Al-doped ZnSe (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2553-2558 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared absorption measurements of localized vibrational modes (LVM) due to Al in ZnSe performed under high-resolution conditions reveal additional features as compared to previous data. The cluster of bands near 340 cm−1 is resolved into at least six and possibly eight individual absorptions. A Green's function calculation over various pertinent models best explains most of these LVM as probably arising from a (2 AlZn-ZnSe) antisite complex (or at least an AlZn pair) with other complexes less likely. The linewidth of individual features can be explained in terms of nearest-neighbor Se host lattice isotopes. Finally, features perturbed from the isolated AlZn case are considered as well as the remaining LVM of unknown origin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335935
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  • 7
    Electronic Resource
    Electronic Resource
    Thermal expansion coefficient of 3C–SiC (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3301-3303 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical results for the temperature dependence of the thermal expansion coefficient for 3C–SiC are reported using a phenomenological lattice dynamical theory in the quasiharmonic approximation. The linear thermal expansion coefficient α of 3C–SiC exhibits a variation with temperature much like that of the specific heat and, unlike other tetrahedrally coordinated materials, it does not attain a negative value at lower temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115227
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  • 8
    Electronic Resource
    Electronic Resource
    Phonon replicas in the photoluminescence emission of AlxGa1−xAs alloys (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3447-3449 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phonon replicas in the photoluminescence spectra of a direct gap AlxGa1−xAs alloy have been observed. The GaAs-like transverse optical and longitudinal optical as well as AlAs-like longitudinal optical modes were observed at the Γ-point. We also observe what we believe to be the longitudinal acoustical phonons at the L-point in the Brillouin zone. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113383
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  • 9
    Electronic Resource
    Electronic Resource
    Phonon excitations and thermodynamic properties of cubic III nitrides (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1553-1555 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive study of phonon excitation and thermodynamic properties of cubic GaN and AlN is reported using a rigid-ion model (RIM) in the quasiharmonic approximation. The data on elastic constants and phonon modes at critical points at ambient and high pressures have allowed us to optimize RIM parameters to obtain accurate values of phonon dispersions, one-phonon density of states, mode Grüneisen parameters γ(q), specific heat Cv(T), and thermal expansion α(T) coefficients. Despite the small softening of TA modes in GaN and AlN, the variations of thermal expansion coefficients are seen much like that of Cv(T), and unlike other III–V compounds it exhibits no negative values at lower temperatures. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456545
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