Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
80 (1996), S. 1934-1936
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The N incorporation behavior in InP grown by gas-source molecular beam epitaxy using a N radical beam source has been investigated. At a given growth temperature, the N composition in InNxP1−x is generally different from the N2 flow-rate fraction in the vapor phase, and as the N2 flow-rate fraction increases, it saturates after increasing to a certain point. This may be due to the small solubility of N in InP. Increasing the growth temperature will result in a loss of N incorporation into the InP as a result of the faster desorption of the N at high temperatures. Optical absorption measurements reveal that the band-gap energy of InNxP1−x decreases drastically, resulting in band-gap bowing. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362945
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