Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
70 (1997), S. 1998-2000
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Measurements of the carrier relaxation dynamics in low-temperature-grown GaAs have been made with a femtosecond-resolution, time-resolved pump-probe technique using a subband-gap probe-beam wavelength. The transient absorption and index of refraction changes have been analyzed using a relaxation model with up to four different excited state populations. The carrier recombination time within the midgap trap states is found to be longer than the subpicosecond free-carrier trapping time. Two time scales are observed for the recombination rate, one of a few picoseconds and one of hundreds of picoseconds, indicating the presence of at least two different trap states for the free-carriers in this material. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.118802
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