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  • 1
    Electronic Resource
    Electronic Resource
    Continuous wave spectral width of surface-emitting lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1326-1327 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the continuous wave spectral width of GaAs gain-guided surface-emitting lasers are reported. The linewidth is found to vary inversely as the output power with a linewidth-power product of 92 MHz. This value agrees well with the calculated result. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358939
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  • 2
    Electronic Resource
    Electronic Resource
    Instability in surface emitting lasers due to external optical feedback (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 16-20 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Instability in the output of dc-biased surface emitting lasers due to an external cavity effect was observed. The output power spectrum exhibited multiple peaks with spacing corresponding to exactly the round-trip delay in silica fibers with length ranging from 2 m to 2 km. The magnitude of the peaks was enhanced in the spectral region centered at the laser relaxation frequency. With increased feedback, the background of the output spectrum was found to increase, indicating the presence of optical chaos. Numerical simulation based on the rate equation analysis was found to agree with the experiment, indicating the surface emitting lasers are well described by the rate equation and are susceptible to feedback as the edge emitting lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353880
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  • 3
    Electronic Resource
    Electronic Resource
    Fabrication and performance characteristics of buried-facet optical amplifiers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3943-3947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication, performance characteristics, and design rules of buried-facet optical amplifiers are described. Chip gain of 25 dB, gain ripple of 〈1 dB, and gain difference of ≤1 dB for TE- and TM-polarized light are observed. The gain ripple and polarization dependence of gain correlate well with the ripple and polarization dependence of the amplified spontaneous emission spectrum. The performance of buried-facet amplifiers is comparable to that of cleaved-facet amplifiers with very good antireflection (R〈10−4) coatings. The buried-facet design reduces the requirement on antireflection coatings and makes the fabrication process more reproducible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345003
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  • 4
    Electronic Resource
    Electronic Resource
    Performance characteristics of In0.2Ga0.8As/GaAs multiquantum-well lasers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3822-3825 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance characteristics of ridge waveguide In0.2Ga0.8As/GaAs multiquantum-well lasers are reported. The lasers emit more than 50 mW/facet in the temperature range 20–100 °C in the fundamental transverse mode. The external differential quantum efficiency of 250-μm-long lasers is 0.4 mW/mA/facet. The internal optical loss is 14 cm−1. The optical gain is found to vary linearly with current. The increase in threshold current with increasing temperature in these lasers is primarily due to decreasing carrier lifetime (increased carrier loss) at high temperature. Increasing the heterobarrier height may further improve the high-temperature performance of these devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346265
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4° off-orientation (001) GaAs substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1613-1616 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20–50% less on an average for VCSELs grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm2 were measured with an emission efficiency of 0.2 mW/mA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104086
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  • 6
    Electronic Resource
    Electronic Resource
    Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2496-2498 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modifications to reduce the series resistance in p-type semiconductor distributed Bragg reflectors (DBR) consisting of ten pairs of quarter-wavelength GaAs (high refractive index)/Al0.7Ga0.3As (low index) layers were made by inserting an intermediate Al0.35Ga0.65As layer or a 200 A(ring) superlattice of GaAs(10 A(ring))/Al0.7Ga0.3As (10 A(ring)) at the GaAs/Al0.7Ga0.3As heterointerfaces. The specific DBR series resistance was reduced by two orders of magnitude to about 6.2×10−5 Ω cm2. These modifications did not alter the optical reflectivity and nearly identical reflection spectra were measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102869
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  • 7
    Electronic Resource
    Electronic Resource
    Linewidth enhancement factor in strained quantum well lasers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2293-2294 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linewidth enhancement factor α in an In0.2Ga0.8As/GaAs strained-layer multiple quantum well (MQW) laser has been determined from the spontaneous emission spectra below threshold. The measured α at the lasing wavelength is found to be 1.0 compared to a value of 5 typically observed for InGaAsP/InP double-heterostructure lasers. The smaller α shows that single wavelength strained MQW lasers may have smaller chirp width under modulation and also smaller cw linewidth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102944
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  • 8
    Electronic Resource
    Electronic Resource
    Highly stable W/p-In0.53Ga0.47As ohmic contacts formed by rapid thermal processing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2220-2222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten contacts to Zn-doped In0.53Ga0.47As have been formed by rapid thermal processing. Contacts to layers with a Zn doping concentration of 5×1018 cm−3 were rectifying as sputter deposited as well as after heat treatments at temperatures lower than 450 °C. Higher processing temperatures caused a linear decrease of the contact resistivity values from 0.6 as deposited to 0.15 Ω mm after heating at 550 °C. Rapid thermal processing at these higher temperatures stimulated the Schottky-to-ohmic contact conversion with a minimum contact resistance value of 8.5×10−5 Ω cm2 and a sheet resistance value of 150 Ω/(D'Alembertian) as a result of heating at 600 °C for 30 s. By increasing the p-InGaAs doping level to 1×1019 cm−3, the specific resistance of this contact was dropped to the minimum of 7.5×10−6 Ω cm2 as a result of heating at 600 °C for 30 s. The W/p-In0.53Ga0.47As contact showed excellent thermal stability over the temperature range of 300–750 °C, with an abrupt and almost unreacted metal-semiconductor interface. Heating at temperatures of 800 °C or higher caused degradation of the contact. This was reflected by a distinct increase in the heterostructure sheet resistance as a result of the intensive interfacial reaction which took place at the contact, accompanied by outdiffusion of both In and As.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102066
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  • 9
    Electronic Resource
    Electronic Resource
    Coherent terahertz radiation detection: Direct comparison between free-space electro-optic sampling and antenna detection (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 444-446 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare the use of free-space electro-optic sampling (FSEOS) with photoconducting antennas to detect terahertz (THz) radiation in the range of 0.1–3 THz. For the same average THz power and low-frequency modulation, signal-to-noise ratio and sensitivity are better with antenna detection at frequencies smaller than 3 THz. When the modulation frequency is increased to more than 1 MHz in FSEOS, both detection schemes have comparable performance. Using a singular-electric-field THz emitter, we demonstrate the feasibility of a THz imaging system using real-time delay scanning in FSEOS and only 20 mW of laser power. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121894
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  • 10
    Electronic Resource
    Electronic Resource
    Terahertz pulse propagation through small apertures (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 907-909 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission of single-cycle terahertz pulses through subwavelength apertures is experimentally studied in the near-field zone. Measurements of throughput for aperture sizes d as small as λ/300 show that the theoretical d3 law requires a correction term which takes into account the physical thickness of the aperture screen. Frequency dependent transmission of the broad band pulses explains changes in their spectral and temporal characteristics. Practical application of small apertures in near-field microscope probes allows achievement of spatial resolution of 7 μm for pulses with a broad spectral content of λ=120–1500 μm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392303
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