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  • 1
    Electronic Resource
    Electronic Resource
    Heat transfer between two metallic surfaces at small distances (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7209-7216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In scanning thermal microscopy, but also in scanning tunneling microscopy, the thermal contact between tip and sample plays an important role. The heat transfer across the vacuum gap between two parallel metallic surfaces, if the gap width is decreased below several microns, has been investigated. At these distances propagating electromagnetic modes die out but simultaneously a transfer of nonpropagating surface modes across the gap becomes more probable. The heat conductance of the vacuum gap should become distance dependent and larger than that given by the Stefan–Boltzmann law; however, the experimental results and theoretical considerations indicate that the heat transfer, based on the discussed proximity mechanism, is very small, smaller than predicted by the theory of Polder and Van Hove [Phys. Rev. B 4, 3303 (1971)]. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358001
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  • 2
    Electronic Resource
    Electronic Resource
    Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 175-186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microscopic nature of the degradation of oxide layers in Si/SiO2/Si structures induced by annealing in the temperature range 1200–1320 °C in inert or weakly oxidizing atmospheres has been studied. Electron-spin-resonance measurements have been performed on unannealed and annealed samples subsequently subjected to γ or X radiation or hole injection. Two oxygen-vacancy-related defect centers were observed, the monovacancy Eγ' center and the multiple vacancy Eδ'—both were observed in substantially larger numbers in annealed oxides as compared to unannealed oxides. Etchback profiling of the paramagnetic defect distributions shows that they are distributed nonuniformly throughout the annealed oxides with the highest densities close to the two Si/SiO2 interfaces. Electrical measurements of fixed oxide charge induced by X irradiation indicate that annealing results in the creation of both positive and negative charge traps. The numbers of positive trapped charges and their radiation dose dependence are inconsistent with their origin being identified simply with the paramagnetic oxygen-vacancy centers. Infrared measurements of the O interstitial content of the float-zone Si substrates of annealed and unannealed samples reveal that the interstitial concentration increases as a function of anneal temperature/time. Atomic force microscopy measurements reveal that the SiO2/Si substrate interfaces are roughened during high-temperature annealing. The data are interpreted in terms of a model in which oxygen is gettered from the oxide film into the over- and underlying Si. The O are incorporated into the Si as interstitials and it is their solubility limit at the anneal temperature which drives the gettering process. The oxygen-vacancy defect profiles near to both Si/SiO2 interfaces are not well predicted by the gettering model suggesting that other interface-related defect creation processes may be active. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359365
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  • 3
    Electronic Resource
    Electronic Resource
    Electron field emission from SiC/Si heterostructures synthesized by carbon implantation using a metal vapor vacuum arc ion source (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1926-1928 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A remarkably low turn-on field of about 1 V/μm has been observed in electron field emission from planar SiC/Si heterostructures formed by high dose C implantation into Si using a metal vapor vacuum arc ion source. An implant energy of 35 keV was used to a dose of 1.0×1018 ions/cm2 with subsequent annealing in nitrogen at 1200 °C for 2 h. X-ray photoelectron spectroscopy showed that a thin surface stoichiometric SiC layer, with a thickness of about 150 nm, had been formed. Atomic force microscopy showed that there are densely distributed small protrusions formed on the surface. The formation of a thin surface stoichiometric SiC layer and the formation of densely distributed small protrusions on the surface are believed to be the two factors responsible for the efficient electron field emission.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121229
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic domain structures of Co22Ag78 granular films observed by magnetic force microscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2472-2474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A magnetic force microscope (MFM) was used to image the topography and magnetic microstructures of Co22Ag78 granular films. The observed morphology shows isolated nanometer-scale cobalt particles (granules) embedded in the silver matrix. Stripe magnetic domains with much larger size (typically of ∼100 nm wide) than that of cobalt particles are resolved clearly on MFM micrographs for the annealed samples. It is demonstrated that the domain width and the relative magnetic force strength first increases and then decreases with annealing temperature with a maximum at about 600 K. We suggest that the appearance of the stripe domains is attributed to magnetic correlation among many of the isolated single-domain cobalt particles and is dependent on the microstructure of the samples. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121393
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  • 5
    Electronic Resource
    Electronic Resource
    Tip artifacts in atomic force microscope imaging of ion bombarded nanostructures on germanium surfaces (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5859-5861 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this communication, we present a study of tip artifacts in atomic force microscope images of nanometer-scale cellular structures created on germanium surfaces by ion bombardment. It is demonstrated that the appearance of a columnar/granular morphology is due to severe image distortion when the tip size is comparable with the mean cell/hole diameter. These tip artifacts can often be deconvoluted by inverting the image and the lateral extension of the cell/hole can be reproduced with reasonable accuracy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366454
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  • 6
    Electronic Resource
    Electronic Resource
    Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 955-957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering spectrometry and ion channeling were used to determine the relative quantities of wurtzite and zinc-blende phases in metalorganic chemical vapor deposition grown Mg-doped GaN(0001) on an Al2O3(0001) substrate with a GaN buffer layer. Offnormal axial channeling scans were used. High-resolution x-ray diffraction measurements also confirmed the presence of mixed phases. The in-plane orientation was found to be GaN[11¯0]||GaN[112¯0]||Al2O3[112¯0]. The effects of rapid thermal annealing on the relative phase content, thickness and crystalline quality of the GaN epilayer were also studied. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371966
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  • 7
    Electronic Resource
    Electronic Resource
    Thermal sensors for investigation of heat transfer in scanning probe microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2262-2266 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Planar thermocouples designed for investigation of heat transfer in scanning tunneling microscopy and scanning thermal microscopy are described. The limit of sensitivity to local thermal power can be as small as 10 nW. The devices are based on two different thin films formed as a cross on a thin glass substrate. Heat fluxes in the cross point can be detected by measuring the thermoelectric signal from two ends of the cross. As described elsewhere planar thermocouples of this type have been successfully used to detect the energy which is deposited by tunneling electrons and to measure the heat which is coupled across a submicron vacuum gap between two metals by the fluctuating fields of electromagnetic surface modes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145225
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  • 8
    Electronic Resource
    Electronic Resource
    Spiral growth of GaAs by metalorganic vapor phase epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1959-1961 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth spirals are observed on metalorganic vapor phase epitaxy grown GaAs surfaces by atomic force microscopy. The growth mechanism is according to the classical Burton–Cabrera–Frank theory. Spirals originate from screw dislocations. Successive turns of steps are sent out by the dislocations. These steps are of monolayer height (0.28 nm) and the interstep distance is around 150 nm. The spiral steps are well developed around the screw dislocations, while the adjacent vicinal steps lack the regularity of the spiral steps. Two-dimensional nucleation islands are also observed on the vicinal steps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111755
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  • 9
    Electronic Resource
    Electronic Resource
    Spiral growth of GaAs by molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1552-1554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Steps of monolayer height (0.28 nm) were observed by atomic force microscopy on a GaAs surface grown by molecular beam epitaxy. The monolayer terrace width between steps was found to be as large as 1000 nm in some areas. Surface reconstruction affects the surface diffusion process during growth and the shape of the step edges. Growth spirals were observed. Spirals originate from screw dislocations. The growth mechanism is according to the Burton–Cabrera–Frank theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112941
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  • 10
    Electronic Resource
    Electronic Resource
    Step flow growth of (La,Ca)MnOδ thin films on (110)NdGaO3 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3272-3274 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Step flow growth patterns have been observed on single-crystal (La,Ca)MnOδ (LCMO) thin films by atomic force microscopy. These films were grown on (110) NdGaO3 substrates by a simple facing-target sputtering method. The steps, of monolayer height (0.2 nm), are surprisingly straight and evenly spaced. The best sample has an average step width of about 400 nm which is comparable to that found on the molecular beam epitaxially grown GaAs. The step edges are parallel to the LCMO [001] direction indicating that the growth rates are anisotropic. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114895
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