ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An investigation of the electrical and microstructural characteristics of the Ti contact on silicon has been carried out. The presence of As in Ti/n+-Si samples was found to retard the formation of polycrystalline silicide (p-silicide) compared with that in Ti/p+-Si samples with BF2+ implantation. Amorphous interlayers (a-interlayers) were found to be present in both Ti/n-Si and Ti/p-Si samples annealed at temperatures of and lower than 450 °C. Although the Schottky barrier heights (SBH's) vary for about 0.05–0.08 eV for samples annealed over a temperature range from room temperature to 900 °C, SBH's at the a-interlayer/n-Si and a-interlayer/p-Si were measured to be about 0.52–0.54 and 0.59–0.57 eV, respectively. The specific contact resistance (ρc) in the Ti/n+-Si system was measured to be the lowest with a value of 1.4×10−7 Ω cm2 when the a interlayer is present. In Ti/p+-Si system, the minimum ρc is about 3×10−7 Ω cm2. The variation in contact resistance with annealing temperature for both Ti/n+-Si and Ti/p+-Si samples is correlated to the change in dopant concentration beneath the contacts as well as microstructures. In the temperature regime where the a interlayer is in contact with the silicon substrate, the junction diode leakage current densities (Jleak's) are considerably lower than those in samples annealed at higher temperatures. The Jleak at −6 V reverse bias is lower than 1 nA/cm2. The breakdown voltage is about 14 V (16 V) for the n+/p (p+/n) junction. The thickness of consumed Si is less in samples annealed at low temperature, and the a-interlayer/Si or p-silicide/Si interface is accordingly farther away from the junction as well as the end-of-range defects. The interface of p-silicide/Si is rougher than that of a-interlayer/Si. In addition, the roughness of the p-silicide/Si interface increases with annealing temperature. For both p+/n and n+/p junctions annealed at 900 °C, rough p-silicide/Si interfaces are thought to lead to spiking and increase the leakage currents.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354672
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