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  • 1
    ISSN: 1279-8517
    Keywords: Spinal cord ; Dorsal horn ; Magnetic resonance imaging ; Radiologic anatomy ; Dorsal root entry zone
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract The spinal dorsal horn is known for its important functional role in the field of transmission and modulation of sensory afferents. Because of this, the dorsal horn represents a target for numerous analgesic and antispastic procedures. Thus, it would be interesting to develop imaging dedicated to this spinal structure. The purpose of this study was to investigate the radiologic anatomy of the cervical dorsal horn by magnetic resonance imaging (MRI) (1.5T). The first step consisted in the validation of the anatomic information provided by MRI on 5 human cadavers. A spin-echo sequence (T2, 2000/45) enabled the demonstration of good correlations between histologic sections and axial MRI slices performed at the corresponding cervical levels. The second step was the 〈〈in vivo〈〈 exploration of 20 subjects, aiming at the development of a gradient echo sequence (T2*) with a conventional MRI unit, compatible with a routine clinical examination. The dorsal horn was clearly identified in 77% of the axial slices performed (n = 300). The angle between the dorsal horn axis and the sagittal plane was measured as from 25.5˚ at C2 to 40˚ at C8 segments. The results of this anatomico-radiologic study of the cervical dorsal horn suggest that preoperative MRI could be useful to design the surgical approach to this structure, as performed during cervical microsurgical drezotomy (DREZ = dorsal root entry zone) for the treatment of selected cases of chronic pain or disabling spasticity in the upper limbs.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Surgical and radiologic anatomy 22 (2000), S. 107-110 
    ISSN: 1279-8517
    Keywords: Anatomy ; Internet ; Computer networks ; Teaching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract In a preceding study, we had reviewed and evaluated the anatomy sites available on the Internet. The evolution of the available sites, the disappearance of certain sites and the appearance of new sites led us to update this list. In addition, the German-speaking sites were included in the study, which previously included only the Anglophone and French-speaking sites. Forty-eight sites were indexed and their addresses are available on the site of the Laboratory of Anatomy of the Faculty of Medicine Lyon-Nord (http://rockefeller.univ-lyon1.fr/Anatomie-Lyon-Nord). Compared to the scores allotted in 1998, we noted in 1999 a significant increase (p = 0.03) in the total score (12.13 ± 2.98 vs. 11,23 ± 2,28/20), which shows that the quality of the anatomic sites available on the Internet has improved.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Surgical and radiologic anatomy 20 (1998), S. 197-201 
    ISSN: 1279-8517
    Keywords: Portal system ; Mesenteric veins ; Portal vein ; Splenic vein ; Abdominal injuries
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract The gastrocolic v. or Henle’s gastrocolic trunk was described in 1868 [9]. We suggest defining this vein as the confluence of the right gastroepiploic and right upper colic vv. We report two original cases of avulsion of the gastrocolic v. occurring during a blunt abdominal trauma. The aim of this paper is a description, based on the literature, of the anatomy of the gastrocolic v. in order to precise the lesional mechanism. The gastrocolic v. is present in 70% of individuals. It is short (less than 25 mm) but of major calibre (3 to 10 mm). The gastrocolic v. is situated close beneath the root of the transverse mesocolon, and travels along the anterior surface of the head of the pancreas. Anatomic variations are detailed and a meta-analysis of interpretable studies was made. Both the supra- and infra-mesocolic surgical approaches are described. The radiologic and surgical importance of the gastrocolic v. is discussed. The lesional mechanism in both our cases of injury of the gastrocolic v. is explained.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Surgical and radiologic anatomy 20 (1998), S. 197-201 
    ISSN: 1279-8517
    Keywords: Portal system ; Mesenteric veins ; Portal vein ; Splenic vein ; Abdominal injuries
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Résumé La description de la v. gastrocolique (vena gastrocolica) ou tronc gastro-colique de Henle remonte à 1868. Nous proposons de définir la v. gastrocolique comme résultant de la confluence de la v. gastro-épiploïque droite et de la v. colique supérieure droite. Nous rapportons deux observations originales d'arrachement de la v. gastro-colique au cours d'un traumatisme fermé de l'abdomen. Le but de ce travail est de décrire, à partir d'une revue de la littérature, l'anatomie de la v. gastrocolique afin de préciser le mécanisme lésionnel. La v. gastrocolique existe chez 70% des individus, c'est une veine courte (moins de 25 mm) et de calibre important (3 à 10 mm). La v. gastro-colique est située immédiatement en dessous de la racine du mésocolon transverse, et longe la face antérieure de la tête du pancréas. Les variations anatomiques sont détaillées et une méta-analyse des études interprétables a été réalisée. Les deux voies d'abord chirurgicales sus- et sous-mésocoliques sont décrites. L'intérêt radiologiqut et chirurgical de la v. gastro-colique est discuté. Le mécanisme lésionnel dans les deux observations de lésions traumatiques de la v. gastrocolique est expliqué.
    Notes: Summary The gastrocolic v. or Henle's gastrocolic trunk was described in 1868 [9]. We suggest defining this vein as the confluence of the right gastroepiploic and right upper colic vv. We report two original cases of avulsion of the gastrocolic v. occurring during a blunt abdominal trauma. The aim of this paper is a description, based on the literature, of the anatomy of the gastrocolic v. in order to precise the lesional mechanism. The gastrocolic v. is present in 70% of individuals. It is short (less than 25 mm) but of major calibre (3 to 10 mm). The gastrocolic v. is situated close beneath the root of the transverse mesocolon, and travels along the anterior surface of the head of the pancreas. Anatomic variations are detailed and a meta-analysis of interpretable studies was made. Both the supra- and infra-mesocolic surgical approaches are described. The radiologic and surgical importance of the gastrocolic v. is discussed. The lesional mechanism in both our cases of injury of the gastrocolic v. is explained.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1432-1076
    Keywords: Childhood respiratory symptoms ; Respiratory impedance
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract A cross-sectional study was conducted to evaluate possible interregional differences in respiratory health in primary school children living in two different towns of the Netherlands, Melick/Herkenbosch Asenray (MHA) (n=511) and Leek (LK) (n=612). The prevalence of respiratory symptoms was determined by means of a questionnaire and respiratory impedance was measured using the forced oscillation technique (FOT). Respiratory symptoms were reported consistently more often in MHA than in LK; chronic cough (17% MHA vs 5% LK), shortness of breath (15% vs 8%), wheeze (16% vs 13%) and attacks of shortness of breath with wheeze (10% vs 7%). However, doctor-diagnosed asthma was reported as 7% in MHA and 6% in LK. The prevalence rates expressed as odds ratios of MHA versus LK were all 〉1 even when adjusted for known indoor environmental factors. Living in MHA appeared to be a statistically significant determinant of the reported symptom prevalence. Furthermore, the child's age, maternal smoking (〉 10 cigarettes/day), and having had domestic animals were positively associated with one or more respiratory symptoms. Calculating adjusted differences in respiratory impedance between the regions resulted in a small but statistically significant difference in resonant frequency, LK being slightly at a disadvantage. Measured outdoor air pollution levels of SO2, NO2, O3 and PM10 were in general higher in MHA. In both regions however, the average levels remained below the present WHO guidelines, except for NO2 in MHA where the guideline was slightly exceeded. Conclusion In this study prevalence rates of key symptoms of asthma were found to be significantly higher in children living in one region of the Netherlands (MHA) compared to another (LK). Known (indoor) risk factors for respiratory disease could not explain the observed differences in symptom prevalence between the regions. However, statistically but not clinically significant interregional differences in respiratory impedance values were found between children living in MHA and children living in LK. Further research will have to incorporate techniques to evaluate the potential influence of information bias.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1323-1325 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface reactivity of hydrogen-passivated, HF-last-cleaned Si(100) toward aqueous HX and HF/HX (X=Cl, Br, I) is examined. The HCl and HBr solutions are found to leave the HF-cleaned bare Si surface unaltered, while the HI solution reoxidizes the hydrogen-passivated surface. Treatments in aqueous HF/HCl or HF/HBr solutions lead to the same surface passivation and surface microroughness as for HF-cleaned surfaces. In the HF/HI solution, a simultaneous oxidation and etching process takes place, resulting in an increased (111) microfaceting of the Si(100) surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7337-7347 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxygen content in zone melting recrystallization silicon-on-insulator (ZMR SOI) layers with thicknesses ranging between 0.5 and 25 μm obtained with a movable lampheater is studied. Secondary-ion-mass spectrometry profiling as well as numerical calculations are presented. The simulations are based on oxygen redistribution during cooling down. In the model it is assumed that the interface reaction is fast enough to be not the rate-limiting step in the redistribution process. Consequently, the oxygen transport was considered to be entirely diffusion limited. Good agreement was found between the measurements and calculated values. The profiles show a maximum at the center of the layer and symmetrically depleted regions in the top and bottom of the silicon film. It has been generally accepted that ZMR SOI layers have a high oxygen concentration corresponding to the saturation level at melting point. In the present study, however, we show that in the 0.5-μm layers the oxygen concentration is as low as 1×1017(O atoms)/cm3.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6462-6467 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of metal–oxide–semiconductor capacitors with SiON/Ta2O5 gate dielectric stacks with thin Ta2O5 layers (6–10 nm) are investigated. From the field and temperature dependence of the current of the gate stacks, it is shown that the main conduction mechanism at low bias is tunneling through the stack and that Poole–Frenkel conduction in the Ta2O5 layer becomes important at larger bias and temperature. From the analysis of the data in the high voltage and temperature range, taking into account the field distribution in both layers, the refractive index n of Ta2O5 and the energy level φB of traps involved in Poole–Frenkel conduction are found to be 2.3 and 0.85 eV, respectively. It is also shown that the gate current density of the stack is reduced by one to three orders of magnitude as compared to SiO2 layers with equivalent electrical thickness (2.5–3 nm). The temperature acceleration effect on the time-dependent dielectric breakdown is shown to be much reduced in the SiON/Ta2O5 stack as compared to SiO2 layers with equivalent electrical thickness. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4351-4355 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current–voltage characteristics of metal-oxide-semiconductor capacitors with a 4.2 nm SiO2 gate oxide are investigated. After the occurrence of soft breakdown, which is observed during constant current stress of the devices, the gate current is shown to behave like a power law of the applied gate voltage. We propose that this power law behavior is due to the formation of a percolation path between the electrons traps generated in the SiO2 layer during current stress of the capacitor. We describe a simple model which accounts for the current–voltage characteristics between two neighbor trapping sites, as well as a distribution of percolation thresholds in these (finite size) ultrathin SiO2 layers. The prediction of the model is in fair agreement with the experimental results in a large voltage range, and leads to a better description of the data than previously reported models. Furthermore, it is shown that this percolation model can also explain the temperature dependence of the gate current after the occurrence of soft breakdown. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2660-2668 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zone melting recrystallization (ZMR) of polycrystalline silicon on SiO2 can offer an interesting, i.e., cheaper, alternative to the dielectric isolation technology used for high-voltage integrated circuits or smart power devices. For that purpose crystalline Si layers of 10–15 μm thickness are needed. In this work a mercury-arc lamp stripheater was used to recrystallize 10 μm thick polycrystalline silicon films. In unseeded layers, grain boundaries and subgrain boundaries appeared. By applying seeding, single crystalline areas of at least 1 mm by 1 mm were obtained. In these layers stacking faults were revealed as being the major crystal defect. In ZMR oxygen, nitrogen, and carbon are the major impurities which are incorporated into the silicon either intentionally or unintentionally. Among these impurities, nitrogen and carbon are believed to play a crucial role in promoting the wetting of the insulator and cap layer by liquid silicon. In this paper the distribution and transport of oxygen and nitrogen during ZMR are studied. It is shown that nitrogen can cause dendritic growth and that oxygen is unlikely to do so.
    Type of Medium: Electronic Resource
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