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  • Articles: DFG German National Licenses  (424)
  • Electronic Resource  (424)
  • 1
    Electronic Resource
    Electronic Resource
    Nanometer scale lithography at high scanning speeds with the atomic force microscope using spin on glass (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2415-2417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have identified a resist material that is suitable for high-speed, nanometer-scale scanning probe lithography (SPL) using the atomic force microscope (AFM). The material is siloxene, commonly known as spin on glass (SOG). The SOG film is deposited on a silicon sample and exposed with a voltage applied between the AFM tip (negative) and the silicon substrate (positive). Voltages of 70 V and currents of 1 nA are typical. It is a positive resist where the etch selectivity between the exposed and unexposed areas is greater than 20. We have recorded line widths as narrow as 40 nm. The writing speed is greater than 1 mm/s, which we believe to be an important attribute in future systems for SPL. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114565
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  • 2
    Electronic Resource
    Electronic Resource
    The Compounds Contributing to the Greenness of Green Tea (2004)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 69 (2004), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: : Color is one of the determinant sensory qualities for green tea. As cold tea beverages in clear bottles are getting more popular, the traditional evaluation methods are gradually being altered to attach more importance to the tea infusion color. For quality control, experiments were carried out on 10 green tea samples to investigate the compounds influencing the colors of dry tea leaves and infusions. By calculating the coefficients of determination between the greenness (expressed in tristimulus data) and chemical composition, chlorophylls proved to be the influential compounds for the color of dry tea leaves; water-insoluble chlorophylls were also released from the fragile tea leaves during infusion and increased both the greenness and turbidity of tea infusions. Among the flavonoids (catechins and flavonols) detected in green tea infusions, quercetin was shown to be the most important phenolic compound contributing to the greenness of tea infusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2004.tb09894.x
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature and size dependent excitonic relaxation process in GaAs/AlGaAs quantum wells
    Amsterdam : Elsevier
    Solid State Communications 85 (1993), S. 111-114 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(93)90357-S
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  • 4
    Electronic Resource
    Electronic Resource
    Complementation of a yeast top2 ts mutation by a cDNA encoding rat DNA topoisomerase IIα (1996)
    Springer
    Molecular genetics and genomics 253 (1996), S. 81-88 
    Details
    ISSN: 1617-4623
    Keywords: Key words Rat ; DNA topoisomerase IIα ; Saccharomyces cerevisiae ; top2ts ; Complementation ; Leucine zipper
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  A series of yeast expression plasmids which comprise segments of the cDNA sequences encoding rat topo IIα have been constructed. The transcription of these constructs is under the control of the yeast GAL1 promoter. Galactose-dependent expression of the cloned rat topo IIα cDNA complemented a yeast top2 ts mutation, as well as a deletion mutation at the yeast TOP2 locus. Truncation of 12 N-terminal amino acids and/or 158 C-terminal amino acids of rat topo IIα had no effect on its ability functionally to substitute for top2 ts . Moreover, a cDNA construct with mutated putative leucine zipper domain (amino acids 993–1013) retained the complementation activity. These observations suggest that transformants capable of conditional topo IIα expression can be exploited as a useful model system for studies on the structure-function relationships of wild-type and mutated topo IIα, as well as the interplay of potential antitumor drugs with the enzyme.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004380050299
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  • 5
    Electronic Resource
    Electronic Resource
    Rotational magnetic measurements of vortex pinning in polycrystalline superconductors (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5879-5879 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization-vector measurements were made at various temperatures on polycrystalline disks of YBa2Cu3O7 and (Ba,K)BiO3 as each was rotated about its axis in a fixed field H along the disk plane. For hysteretic starting states, the vortex flux density vector B is found to bifurcate into a BR component that rotates rigidly with the sample and a BF component that stays at a fixed angle (θF) relative to H, thus turning frictionally relative to the sample, as seen earlier. With increasing H, BR decreases and BF increases in size, indicating a distribution in the strength of the vortex pinning torques. After BR has vanished, the frictional angle θF decreases rapidly. Thus, the quantity Hμ sin θF (μ being the quantized vortex moment), which equals the average pinning torque (τp) on each vortex, does not remain constant but diminishes with increasing H. This decrease of τp is consistent with the collective pinning phenomenon known as vortex bundling. At fixed H, τp diminishes rapidly with increasing temperature, reaching very low values well below Tc. These results are compared with those derived from critical-state model interpretations of conventional hysteresis loop data. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362159
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  • 6
    Electronic Resource
    Electronic Resource
    Growth mode of epitaxial Si0.5Ge0.5 layer grown on Si(100) by ion-beam-assisted deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5993-5999 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation and growth of the Si0.5Ge0.5 alloy layer on Si (100) substrate during ion-beam-assisted deposition (IBAD) have been investigated by atomic force microscopy, reflection high-energy electron diffraction, transmission electron microscopy, and double-crystal rocking diffraction. We confirmed that Si0.5Ge0.5 nucleates on Si (100) via the Stranski–Krastanov (SK) mechanism by IBAD, and Ar-ion bombardment suppressed SK growth mode as well as improved crystalline perfection. The epitaxial temperature was observed at 200 °C, and it was much lower than the growth temperature (550–600 °C) in molecular-beam epitaxy (MBE). The χmin value (the ratio of channeling to random backscattering yields) was 10.5% lower than the obtained MBE value. The effect of ion bombardment on nucleation was explained as the result of ion-bombardment-induced dissociation of three-dimensional islands and enhanced surface diffusion, and appeared only at low deposition temperatures where the dissociation of three-dimensional islands is more favorable than the formation of those islands. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360605
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  • 7
    Electronic Resource
    Electronic Resource
    Nondestructive propagation loss and facet reflectance measurements of GaAs/AlGaAs strip-loaded waveguides (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6318-6320 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified Fabry–Perot resonance technique using a single cavity was proposed to obtain the propagation loss of the optical waveguide. The propagation loss as well as the facet reflectance were measured without sequential cleavage for a GaAs/AlGaAs strip-loaded waveguide based on the contrast ratios of the reflected and transmitted interference patterns. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360729
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  • 8
    Electronic Resource
    Electronic Resource
    Diminution of the surface states on GaAs by a sulfur treatment (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1959-1961 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface chemical properties of a GaAs layer grown by molecular beam epitaxy were investigated by photoluminescence (PL) and photoreflectance (PR) measurements. While the intensity of the PL spectra for the sulfur-treated GaAs, using a (NH4)2Sx solution, increased 75 times compared to that for the as-grown GaAs, the peaks for the as-grown GaAs measured by PR vanished after a sulfur treatment. These results indicate that the surface state acting as the nonradiative recombination centers was passivated by the sulfur. The chemical adsorption behavior resulting from the sulfur is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357656
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  • 9
    Electronic Resource
    Electronic Resource
    Schematic frictional model for interacting vortices in an isotropic superconducting plate (abstract) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6965-6965 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the simple model proposed, repulsive intervortex forces are balanced by containing forces produced by the external field (H) and by frictional forces representing the effects of pinning on displaced vortices. For the field-cooled (FC) state, whose vortex density is presumably uniform, the empirical fact that the average flux density (B¯) in nearly equal to H yields an operational inverse-square dependence of the intervortex force on the intervortex spacing. For both the FC and zero-field-cooled (ZFC) states, expressions are derived for B¯ vs H (including the remanences at H=0) and for the profiles of B across the sample thickness. Calculations of these properties are compared with experiment and with the macroscopically related critical-state model, revealing again that the pinning forces are strongly dependent on H. The frictional interacting-vortex model is also used in deriving the critical current as a transport property of the FC and ZFC states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358058
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  • 10
    Electronic Resource
    Electronic Resource
    Kinetics and mechanism of wet oxidation of GexSi1−x alloys (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1764-1770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal oxidation of polycrystalline GexSi1−x (0.10≤x≤0.47) and pseudomorphic Ge0.2Si0.8 has been studied in wet ambient at 550 to 900 °C. A uniform GexSi1−xO2 oxide is observed by backscattering spectrometry for a high Ge content at low oxidation temperatures; a SiO2 oxide is obtained for a low Ge content at high temperatures; a GeySi1−yO2 oxide with reduced Ge content (y〈x) is found in between. Ge piles up behind the oxide when SiO2 or GeySi1−yO2 form. The transition between these three types of oxides also depends on the crystallinity of the GeSi alloy. When a uniform GexSi1−xO2 oxide grows, its thickness is proportional to the square root of the oxidation duration, which indicates that the rate-limiting process is the diffusive transport across the oxide of, most probably, the oxidant. The rate increases with the Ge content in the alloys. The proportionality constant, B, for this process is B(T)=[(1.0±0.2)×1011 nm2/h]exp[(−1.1±0.2 eV)/kT] for Ge0.47Si0.53. It is proposed that, in general, the oxidation behavior is determined by the competition between the speed of the diffusive process in the unoxidized GeSi alloy and the velocity at which the oxidation front progresses. The controlling factors are the oxidation temperature, the composition, and the structure of the GexSi1−x alloy. A model is proposed that is based on these three factors. Analogies with this system exist where all three elements are solid.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356368
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