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  • Artikel: DFG Deutsche Nationallizenzen  (27)
  • Digitale Medien  (27)
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  • Artikel: DFG Deutsche Nationallizenzen  (27)
Materialart
  • Digitale Medien  (27)
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  • 1
    Digitale Medien
    Digitale Medien
    Electrical activation of group-IV elements implanted at MeV energies in InP (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1708-1712 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electrical activation and carrier mobility of InP implanted with the group-IV elements at MeV energies has been studied as a function of implanted atom (C, Si, Ge, and Sn) and rapid thermal annealing temperature (500–800 °C). In addition, electrical results have been correlated with photoluminescence (PL) measurements. In general, for a dose of 5×1014/cm2 and a projected range of ∼1.0 μm, the electrical activation and carrier mobility increase then saturate with increasing annealing temperature. Similarily, PL emission intensity increases with increasing annealing temperature. At a temperature of 750 °C, the electrically active fraction increases from C, Ge, Si, to Sn, respectively, while carrier mobility and PL emission intensity decreases with increasing atomic mass. Thus, Sn exhibits the highest electrical activation yet lowest carrier mobility with little optically observable, postanneal lattice recovery.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351201
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  • 2
    Digitale Medien
    Digitale Medien
    Isotope effects for mega-electron-volt boron ions in amorphous silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4836-4840 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The depth profiles of 10B and 11B implanted into amorphous silicon have been analyzed by secondary ion mass spectrometry. Implantation energies between 0.4 and 5.0 MeV were used, and each sample was sequentially implanted with both 10B and 11B without changing the acceleration voltage but only the field in the mass analyzing magnet. A shift between the two profiles is clearly resolved and has been carefully studied as a function of ion energy. A maximum shift of 3.5% in mean projected range (Rp) is revealed at 0.6–0.8 MeV [Rp(11B)≥Rp(10B)], and for higher energies the ratio Rp(11B)/Rp(10B) decreases slowly to a value of ∼1.006 at 5.0 MeV. This reverse shift (heavier isotope penetrates deeper) is attributed to a larger electronic stopping cross section (Se) for 10B than for 11B at a given energy E where Se∼Ep and p≥0. The experimental data for Rp(11B)/Rp(10B) and Rp(11B) are compared with calculations, and it is demonstrated that the variation of Rp(11B)/Rp(10B) with ion energy hinges strongly on the Se vs E dependence. A close velocity proportional dependence (p=0.50±0.03) is found to be valid up to ∼300 keV, and then p decreases gradually with a maximum in Se (p=0) at ∼2.0 to 2.5 MeV. A semiempirical expression is presented for Se and shown to yield excellent agreement with both the relative isotope shift and the absolute range values; the deviations are less than 0.2% and 3.0%, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353798
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  • 3
    Digitale Medien
    Digitale Medien
    High dose, heavy ion implantation into metals: The use of a sacrificial carbon surface layer for increased dose retention (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4014-4019 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ion implantation into metals has the potential of producing metastable compounds and solutions that cannot be achieved using conventional processing methods. However, when high doses of heavy ions into metals are necessitated, the technique is often limited by sputtering effects which dictate a maximum achievable implanted ion concentration in the target. Sputtering of light materials (such as C) by heavy ions is much less significant, however. This study investigates the feasibility of "protecting'' a metal target surface from sputtering during a heavy ion implant by using a thin "sacrificial'' C layer deposited on the target surface. Uncoated and C-coated (∼1000-A(ring)-thick C) Cu targets were bombarded with 600–1000 keV I− ions to a total dose of ∼2×1017 I/cm2. Uncoated samples displayed typical saturation behavior, retaining between 17% and 42% of the dose, depending on the energy. The maximum I concentration achieved in the uncoated samples was about 6 at. %. Excellent results were achieved with the C-coated samples, with retentions of 100% and peak I concentrations between 18 and 33 at. %. Significant mixing of C was found to occur at the C/Cu interface, however as the implantation energy was increased the I concentration profile shifted more deeply into the sample and away from the mixed C/Cu region. This suggested that higher energies and careful tailoring of the implant parameters can eliminate any problems with C mixing.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352254
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  • 4
    Digitale Medien
    Digitale Medien
    Single-energy, MeV implant isolation of multilayer III-V device structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1010-1013 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A single-energy, implant isolation scheme for thick (≥1.5 μm) III-V semiconductor device structures such as heterojunction bipolar transistors (HBTs) is described. A 5-MeV O+ implant at doses around 1015 cm−2 produces an almost uniform damage profile over ∼2 μm, sufficient to isolate structures containing highly doped (p=7×1019 cm−3) individual layers. The heavily damaged region associated with the end of the O+ ions range is placed in the underlying semi-insulating substrate. Resistivities above 108 Ω/(D'Alembertian) are obtained in GaAs/AlGaAs HBTs with such an implant, following annealing at ∼550 °C. High-quality, 2×5 μm2 HBTs with gains of 25 for base doping of 7×1019 cm−3 have been fabricated using this isolation scheme. A considerable simplification is achieved over the use of conventional keV implants, where up to ten separate ion energies are required to isolate an HBT structure.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350436
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  • 5
    Digitale Medien
    Digitale Medien
    Use of MeV O+ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4949-4954 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The implant isolation characteristics of highly doped n- and p-type GaAs epitaxial layers implanted with 5 MeV O+ ions are reported. High (∼108 Ω/(D'Alembertian)) sheet resistances are obtained in such layers following annealing at 550–600 °C for ion doses around 1015 cm−2. The residual conductivity is still due to hopping processes with small activation (50–70 meV) energies. The use of a single MeV O+ implant considerably simplifies the isolation of GaAs/AlGaAs heterojunction bipolar transistor (HBT) structures relative to the usual multiple-implant keV energy scheme. Small geometry (2×5 μm2) HBTs with gains of 25 for highly-doped (p=7×1019 cm−3) base layer structures have been fabricated using MeV implant isolation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350643
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  • 6
    Digitale Medien
    Digitale Medien
    The use of an Al sacrificial layer to improve retention during high dose Pt ion implantation into Ni (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6619-6624 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Our previous work [Clapham, Whitton, Ridgway, Hauser, and Petrovic, J. Appl. Phys. 72, 4014 (1992) and Clapham, Whitton, and Ruck, Nucl. Instrum. Methods B 80/81, 501 (1993)] has shown that the sputtering limitation often associated with high-dose, heavy ion implantation into metals can be overcome by using a thin (∼1000 A(ring)) C sacrificial layer. This layer, which is deposited on the surface prior to implantation, sputters slowly during bombardment, thus protecting the underlying target. The present study further investigates the potential of the sacrificial layer technique, using Al as a sacrificial layer on a Ni target implanted with high doses (to 7×1017 ions/cm2) of 5 MeV Pt ions. The Al layer was found to be very effective in enhancing retention of the implanted Pt, with 100% retention and a maximum concentration of 19 at. % Pt achieved for the highest dose. This compares with a saturation concentration of ∼10 at. % Pt when no sacrificial layer was used. The mixing behavior of Al into Ni was consistent with other studies conducted at lower ion energies. The temperature region of radiation-enhanced diffusion was established, and the phase Ni3Al was found to be present in the Al/Ni mixed region after Pt bombardment.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355102
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  • 7
    Digitale Medien
    Digitale Medien
    Buried SiO2 layer formation in Si with an MeV O ion beam (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1133-1138 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A systematic study of O implantation into Si at MeV energies and stoichiometric doses is reported. Si substrates were implanted with 1 MeV O ions to doses of 0.73, 1.45, and 2.18×1018 cm−2 at implant temperatures of 150, 300, and 450 °C. The samples were then subjected to a high temperature anneal (1250 °C for 2 h). Cross-sectional transmission electron microscopy and Rutherford backscattering combined with channeling were used to study the resultant defect structures. The microstructure after annealing was found to be highly implant temperature dependent while very little dose dependence was observed. In the Si overlayer, twinning and polycrystalline Si were observed at the lowest implant temperature while SiO2 precipitation was apparent at all temperatures with precipitate size increasing with implant temperature. In the SiO2 layer, Si islands were observed at the high implant temperatures. A comparison is made between MeV and conventional implant energies. At MeV implant energies and stoichiometric doses, crystallinity in the Si overlayer is retained even at implant temperatures as low as 150 °C. Such temperatures are shown to be advantageous for inhibiting SiO2 precipitation in the Si overlayer.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353278
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  • 8
    Digitale Medien
    Digitale Medien
    The origin of the ∼0.75 eV photoluminescence emission band in ion-implanted InP (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6073-6078 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have performed a photoluminescence study of InP:Fe (100) substrates after implantation with carbon, silicon, germanium, tin, indium, and phosphorous ions with a projected range of 1 μm. The main part of our study concentrated on the ∼0.75 eV emission band previously reported for silicon-implanted InP. We conclude that this emission is due to a donor-acceptor pair center comprised of a group IV element and a defect. The center can be formed by silicon implantation, but other group IV elements such as germanium or tin produce an essentially identical emission. Thus this band cannot be treated as a silicon "signature''. The defect related to this center is formed during annealing of implantation damage and is enhanced by deviations in stoichiometry toward excess indium. We have also shown that a band at ∼1.19 eV can be produced by a variety of methods some of which directly involve phosphorous depletion.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351374
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  • 9
    Digitale Medien
    Digitale Medien
    Electrical inactivation in Pb-implanted InP (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7545-7548 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Pb-implanted InP has been characterized with electrical measurements, Rutherford backscattering spectrometry combined with channeling (RBS/C), and transmission electron microscopy (TEM). Although donor activation can be achieved in InP with implantation and annealing of all group-IV elements of lesser mass, the n-type conductivity measurable in Pb-implanted InP is attributed not to ionized Pb donors but to implantation-induced disorder. The latter was verified with samples implanted with the isoelectronic group-V element Bi which yielded both comparable disorder and conductivity. Furthermore, RBS/C measurements indicate that for impurity concentrations of ∼1×1020 atoms/cm3, only ∼5% and ∼17% of Pb and Bi atoms, respectively, occupy substitutional or near-substitutional lattice positions following rapid thermal annealing. Pb precipitates, as evident with TEM, comprise a significant component of the post-anneal, nonsubstitutional atom fraction. Conversely, the as-implanted, substitutional fractions of Pb and Bi atoms are both ∼85%. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362409
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  • 10
    Digitale Medien
    Digitale Medien
    Rapid thermal annealing of Sn-implanted InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2375-2379 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Rapid thermal annealing (RTA) of Sn-implanted InP has been investigated with a variety of analytical techniques including electrical measurements, Rutherford backscattering spectrometry, transmission electron microscopy and secondary-ion-mass spectrometry. RTA is shown to yield high electrical activation with negligible dopant diffusion. Incomplete electrical activation can result from dopant/defect complexes, native defect compensation, nonstoichiometry and dopant precipitation where the relative contribution of a given factor is dependent on both ion dose and annealing temperature. P coimplantation is shown to increase electrical activation through an increase in the number of ionized donors via a decrease in the number of dopant/defect complexes (in contrast to lattice site switching characteristic of dopant amphoteric character). © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358761
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