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  • Articles: DFG German National Licenses  (98)
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  • Articles: DFG German National Licenses  (98)
Material
Years
  • 1
    Electronic Resource
    Electronic Resource
    Metal/polymer interface adhesion by partially ionized beam deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5759-5764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that a peel strength of larger than 70 g/mm adhesion can be achieved between Cu and Parylene-N surfaces using the partially ionized beam (PIB) deposition technique while the conventional deposition techniques such as thermal evaporation, e-beam evaporation, and sputtering give no measurable adhesion. With the PIB process, neither an adhesion enhancement layer nor substrate pretreatment is required. In the PIB deposition, up to 5% of self-ions and 3 kV substrate bias were used during deposition. Secondary-ion-mass spectroscopy revealed a Cu–Parylene-N intermixed layer located at the Cu/Parylene-N interface. It is proposed that the mechanical interlocking provided by the graded interface region may play a role for the observed adhesion enhancement. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363630
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Texture analysis of CoGe2 alloy films grown heteroepitaxially on GaAs(100) using partially ionized beam deposition (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7261-7267 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection x-ray pole figure analysis techniques were used to study the heteroepitaxial relationships of the cobalt germanide CoGe2 to GaAs(100). The alloy films were grown using the partially ionized beam deposition technique, in which low energy Ge+ ions are employed to alter the heteroepitaxial orientation of the CoGe2 deposits. The CoGe2[001](100)(parallel)GaAs[100](001) orientation, which has the smallest lattice mismatch, was found to occur for depositions performed at a substrate temperature around 280 °C and with ∼1200 eV Ge+ ions. Lowering the substrate temperature or reducing the Ge+ ion energy leads to CoGe2(100) orientation domination with CoGe2[100](010)(parallel)GaAs[100](001) and CoGe2[100](001)(parallel)GaAs[100](001). Substrate temperature alone was seen to produce only the CoGe2(100) orientation. For CoGe2(001) films, additional energy was required from Ge+ ions in the evaporant stream. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365323
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Structural and electro-optical investigation of a vapor-deposited chromophore-polymer thin film (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2258-2263 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonlinear optical films were vapor deposited onto Si(100) and indium-tin-oxide-coated glass. These films are guest-host-type polymer and showed electrooptical (EO) properties after poling. The host polymer is Teflon AF 1600 (AF) and the guest is dimethylaminonitrostilbene (DANS). Deposition is done by coevaporation. EO effects were found in films containing 5–25 vol % DANS. The EO coefficient r33, is found to be a function of composition, poling temperature, and cooling rate during poling. The highest EO coefficient obtained is 2.4 pm/V from a film with 10 vol % DANS and poled at a temperature of 130 °C. Very little or no EO effects were found for films with (approximately-greater-than)25 vol % DANS. This is found to be a result of phase separation and subsequent crystallization of DANS. A decrease of EO effect at higher poling temperature is possibly a result of thermal disorder which was "frozen'' during cooling. DANS was also found to react with Teflon AF 1600 at a higher DANS concentration. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358812
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  • 4
    Electronic Resource
    Electronic Resource
    Partially ionized beam deposition of Ag films on insulating substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2735-2738 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A partially ionized beam deposition technique which utilizes a small fraction of self-ions during deposition is used to grow thin Ag films (∼1200 A(ring)) on glass substrates. It is shown that due to substrate charging the Ag film is discontinuous and has inferior structural and electrical properties. This difficulty was overcome by using an oscillatory substrate bias so that electron showers are directed toward the surface to neutralize the substrate during deposition. We show that this scheme of deposition can produce thin and continuous Ag films on glass with bulk-like resistivity with a substrate bias of (approximately-greater-than)1.3 kV. This deposition technique opens up the possibility of coating high-quality metal films on insulators for optical and electronic applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358742
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  • 5
    Electronic Resource
    Electronic Resource
    Extended bulk defects induced by low-energy ions during partially ionized beam deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2206-2208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The study of possible defects generated by low-energy ions during partially ionized beam (PIB) depositions was performed. No defects were observed when acceleration voltage was set lower than 1 kV. Surprisingly, several deep levels were detected up to the depth of 4000 A(ring) in the 3-kV sample. However, these levels can be annealed out at a relatively low temperature of 400 °C. It is concluded in this study that, by properly choosing the ion energy range, PIB deposition will not cause severe damage to the substrate and can be a viable technique for growing heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341683
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical characteristics of hydrogen implanted silicon Schottky diodes having large difference in metal work function (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5040-5043 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen ion implantation was carried out on Schottky diodes having large difference in metal work function, Ti/p-Si and PtSi/p-Si diodes. Current-voltage (I-V) measurements showed that, following ion implantation, Ti/p-Si diodes exhibited rectifying characteristics; in contrast, no significant rectifying behavior was observed in the PtSi/p-Si diodes. These results showed a dependence of the implantation effects upon metal overlayer work functions. Consequently, the observations did not seem to indicate the occurrence of Fermi level pinning due to a highly damaged near-surface region after ion implantation, as previously suggested. Capacitance-voltage (C-V) measurements revealed a decrease in the diode capacitances along with a significant reduction of acceptor concentration following the implantation. In general, the results suggest that ion implantation alters the electrical characteristic of the diodes mainly by creating defects in the semiconductor depletion region. All such defects act as recombination centers giving rise to a deviation of the electrical characteristics from the normal behavior. They do not play a role in producing a Fermi level pinning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340400
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Real time resistivity measurements during sputter deposition of ultrathin copper films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1667-1672 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the electrical resistivity of thin copper films sputtered onto silicon dioxide, in real time, are reported. The electrical resistivity is shown to strongly depend on the film's thickness for thicknesses below the bulk mean free path of copper (39 nm). Model fits to the electrical resistivity combined with ex situ atomic force microscopy and transmission electron microscopy suggest that the average grain size plays a dominant role in the resistivity during growth. Furthermore, observations are made on the relaxation of the electrical resistivity after the growth (by sputtering) is terminated, at room temperature. Both the magnitude and the time scale of change in the electrical resistivity are observed to be a function of the film's thickness. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430530
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1448-1452 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature deposition of tantalum oxide films on metallized silicon substrates was investigated by reactive pulsed magnetron sputtering of Ta in an Ar/O2 ambient. The dielectric constant of the tantalum oxide ranged from 19 to 31 depending on the oxygen percentage [P(%)=PO2/(PO2+PAr)] used during sputtering. The leakage current density was less than 10 nA/cm2 at 0.5 MV/cm electric field and the dielectric breakdown field was greater than 3.8 MV/cm for P=60%. A charge storage as high as 3.3 μF/cm2 was achieved for 70-Å-thick film. Pulse frequency variation (from 20 to 200 kHz) did not give a significant effect in the electrical properties (dielectric constant or leakage current density) of the Ta2O5 films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372033
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  • 9
    Electronic Resource
    Electronic Resource
    Transient charging effects on insulating surfaces exposed to a plasma during pulse biased dc magnetron sputtering (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5898-5903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Calculations of the transient charging currents to an insulating surface exposed to a dc discharge after the application of a pulse bias to the insulating surface are made based on a quasistatic treatment of the sheath's impedance as a nonlinear dc resistance. Measurements of these transient charging currents are shown to correlate with the calculated transient currents for the experimental conditions used in this study. Discussion is then provided to indicate the limits on the pulse, plasma, and coupling conditions in which this quasistatic, dc treatment of the sheath's response to the applied pulse remains valid. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1420768
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  • 10
    Electronic Resource
    Electronic Resource
    Self-cleaning effect in partially ionized beam deposition of Cu films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4519-4521 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have shown that high-purity Cu films can be deposited on the Si substrate at room temperature in a conventional vacuum condition using the partially ionized beam technique. The beam contains about 2% of Cu self-ions and a bias potential of 1 kV is applied to the substrate during deposition. By using the secondary ion mass spectrometry technique we show that the Cu/Si interface is free of contaminants such as oxygen, carbon, and hydrogen, despite the fact that no in situ surface cleaning has been performed on the substrate prior to deposition. These phenomena are attributed to the self-cleaning effect induced by the energetic Cu ions bombardment during deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343954
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