Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Characterization of BN Thin Films Deposited by Plasma CVD (1991)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 54-55 (Jan. 1991), p. 277-294 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.54-55.277.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Study of the factors affecting the broadening of the photoluminescence spectra of InGaAs/InP quantum wires (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4161-4166 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of the observed large half width of photoluminescence spectra for InGaAs/InP quantum wires fabricated by electron beam lithography and reverse-mesa wet etching have been investigated. First, we studied size fluctuations in the fabricated wires using an atomic force microscope. We also studied other factors that can affect the photoluminescence half width. We found that the interface carrier concentration and size fluctuations play dominant roles in shaping the luminescence spectrum for wires narrower than 200 A(ring). For wider wires, the carrier concentration was found to be a factor in the broadening. These results indicate that a large half width itself does not directly mean a degradation of device performance, but the amount of size fluctuations limits it.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355998
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    High-n helicity-induced shear Alfvén eigenmodes (1992)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 4 (1992), S. 1115-1121 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-n helicity-induced shear Alfvén eigenmodes (HAE) are considered both analytically and numerically for the straight helical magnetic system, where n is the toroidal mode number. The eigenmode equation for the high-n HAE modes is derived along the field line and, with the aid of the averaging method, is shown to reduce to the Mathieu equation asymptotically. The discrete HAE modes are shown to exist inside the continuum spectrum gaps. The continuous spectrum gaps appear around ω2=ω2A[N(lι(large-closed-square)−m)/2]2 for N=1,2,..., where ωA is the toroidal Alfvén transit frequency, and l, m, and ι(large-closed-square) are the polarity of helical coils, the toroidal pitch number of helical coils, and the rotational transform, respectively. For the same ωA and ι(large-closed-square), the frequency of the helical continuum gap is larger than that of the continuum gap in tokamak plasmas by ||l−ι(large-closed-square)−1m||. The polarity of helical coils l plays a crucial role in determining the spectrum gaps and the properties of the high-n HAE modes. The spectrum gaps near the magnetic axis are created by the helical ripple with circular flux surfaces for l=1, and ≥3 helicals. For l=2 helical systems, the spectrum gaps are created by the ellipticity of the flux surfaces. These analytical results for the continuum gaps and the existence of the high-n HAE modes in the continuum gaps are confirmed numerically for the l=2 case, and it is found that the HAE modes exist for mode structures with the even and the odd parities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.860119
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Geometrical shape dependent polarization anisotropy in electroluminescence from InGaAs/InP quantum wires (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1094-1096 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The polarization properties of edge-emitted electroluminescence from InGaAs/InP quantum wires fabricated by reverse-mesa wet etching, electron-beam lithography, and overgrowth, are investigated. Strongly TE polarized electroluminescence from relatively wide wires approaches isotropy as the wires become narrower. The observed dependence on wire size is attributed to a transition from a two-dimensional to a one-dimensional system. The implication is that quantum wires could potentially be applied to polarization-controlled devices, such as polarization insensitive optical amplifiers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108752
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Gate-voltage dependence of the critical current of the superconducting field effect transistor (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2473-2475 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The saturation of the critical current as a function of the gate voltage found in the Nb-Si-Nb superconducting field effect transistor is analyzed numerically using the de Gennes expression for the proximity effect. According to the analysis, (i) the Schottky barrier effect is found to be negligible under experimental conditions, (ii) mobility of silicon fitted to the experimental curve shows a power relation to the gate voltage with exponent of about −0.81. This exponent is consistent with the results from independent experiments and a simple theory of surface scattering. The results indicate that the surface scattering effect causes the saturation phenomenon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108156
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Clear energy level shift in ultranarrow InGaAs/InP quantum well wires fabricated by reverse mesa chemical etching (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 720-722 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated ultranarrow InGaAs/InP buried quantum well wires by means of electron beam lithography and reverse mesa wet etching. Owing to the reverse mesa etching profile, the lateral dimension of the wires has been reduced to 10 nm. Furthermore, we investigated the optical characteristics of these wires by photoluminescence and observed, for the first time, clear dependence of luminescence wavelength upon the wire width even for wires down to 10 nm, which is well explained by the theoretical calculation. The blue-shifted shoulder structures were also observed and they were assigned theoretically to be the second quantized level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104526
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Evaluation of phenyldimethylethoxysilane treated high-performance thin-layer chromatographic plates. Application to analysis of flavonoids inScutellariae radix (1993)
    Springer
    Chromatographia 35 (1993), S. 281-284 
    Details
    ISSN: 1612-1112
    Keywords: Thin-layer chromatography ; Monophenyl-treated thin layer plate ; Phenyldimethylethoxysilane treated plate ; Flavonoids inScutellariae radix ; Baicalin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Summary The retention and selectivity of flavonoids (baicalin, baicalein, wogonin, oroxylin A) inScutellariae radix have been studies by high-performance thin-layer chromatography on phenyldimethylethoxysilane-treated silica plates. The silica plates treated with phenyl groups were used for physical and chemical analysis. From elemental carbon analysis, the maximum number of bonded phenyl surface groups per gram was calculated to be 0.467×1021 (Oginal silica plate: Merck Art. 15109, Silica gel 100 F254). With methanol-1/15 M phosphate buffer (pH 6.2) mixtures as mobile phase, baicalin, baicalein, wogonin, and oroxylin A inScutellariae radix were separated. It has been shown that phenyl-treated plates are more suitable for selective separation of baicalin, baicalein, wogonin, and oroxylin A than octadecyl-treated plates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02277510
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Localization of the gene transcripts of 11 β-hydroxylase and aldosterone synthase in the rat adrenal cortex by in situ hybridization (1991)
    Springer
    Histochemistry and cell biology 96 (1991), S. 391-394 
    Details
    ISSN: 1432-119X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Using in situ hybridization, localization of the gene transcripts of 11 β-hydroxylase and aldosterone synthase was investigated in order to clarify the sites for the synthesis of corticosterone (glucocorticoid) and aldosterone (mineralcorticoid) in the rat adrenal cortex. The gene transcript of 11 β-hydroxylase was localized in all the endocrine cells of the entire adrenal cortex, while that of aldosterone synthase was exclusively confined in zona glomerulosa cells. These results represent that every endocrine cell of all the cortical zones synthesizes 11 β-hydroxylase which converts 11-deoxycorticosterone to corticosterone, and only glomerulosa cells synthesize aldosterone synthase which produces aldosterone from corticosterone. Thus it is clearly shown that zona glomerulosa cells synthesize mineralcorticoid, while zona fasciculata as well as reticularis cells produce glucocorticoid.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00315995
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Male and female sex pheromones produced byAcarus immobilis Griffiths (Acaridae : Acarina) (1993)
    Springer
    Naturwissenschaften 80 (1993), S. 34-36 
    Details
    ISSN: 1432-1904
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01139756
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Immunocytochemical studies on the localization of pancreatic-type phospholipase A2 in rat stomach and pancreas, with special reference to the stomach cells (1990)
    Springer
    Histochemistry and cell biology 94 (1990), S. 135-140 
    Details
    ISSN: 1432-119X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Using a specific polyclonal antibody raised against rat pancreatic phospholipase A2 (PLA2), we investigated the localization of the enzyme in the rat pancreas and stomach by light and electron microscopy. In the pancreas, the enzyme was localized in the acinar cells, whereas the pancreatic islets showed no immunoreaction. In the stomach, the PLA2 reactive with the anti-pancreatic PLA2 antibody was distributed exclusively in the gastric glands, but not in the gastric pits or the pyloric glands. On the section of the stomach subjected to immuno- and PAS-staining, immunopositive cells were not the PAS-positive cells located in the gastric pit and the neck region of the gastric gland. Immunopositive cells were present from the neck to the bottom of the gastric gland. Immunoelectron microscopic observation revealed that the immunogold-labeled cell had a highly-developed rough endoplasmic reticulum in the basal cytoplasm and characteristic zymogen granules in the apical cytoplasm. Taking into account the cell position in the gastric gland, the immunopositive cell could therefore be identified as a chief cell. Since no double stainability with PLA2 and PAS was observed in the same cell, it is suggested that PLA2 could be used cytochemically as a marker enzyme of the chief cell in the gastric gland at the light-microscopic level. From the immunoelectron microscopic findings, we believe that the PLA2 in the stomach is released into the lumen of the stomach by exocytosis and could function as a digestive enzyme in the alimentary tract, like the PLA2 secreted from the pancreas. Other possible roles of the PLA2 in the stomach are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02440179
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...