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  • 1
    Electronic Resource
    Electronic Resource
    Extended x-ray absorption fine structure study of bond lengths in epitaxially grown (Ga,In)(As,P) alloys from dilute limit to concentrated (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4513-4517 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extended x-ray absorption fine structure (EXAFS) measurement is the technique to measure nondestructively the nearest-neighbor distance, to the accuracy within 0.01 A(ring) or better, coordination number, and atomic species. Especially, fluorescence-detected EXAFS is best suited to characterize the atomic scale microstructure of epitaxially grown thin layers on a thick substrate. We have investigated the microstructure for each atomic pair of Ga-P, Ga-As, and In-As in (Ga,In)(As,P) alloys lattice-matched with InP, over a wide range of composition from dilute limit, through quaternary, to ternary. Constant atomic distances over the wide range were revealed when the average lattice parameter was kept constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346182
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  • 2
    Electronic Resource
    Electronic Resource
    Variable exit beam height double-crystal monochromator for high-power insertion devices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 350-354 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A variable exit beam height double-crystal monochromator for high-power insertion devices was built and tested at the Photon Factory. The second crystal is mounted on a high-precision XY translational stage and its position in the parallel and perpendicular direction to the reflecting plane (x,y) is computer controlled. In this design, the exit beam height (y) and geometrically required positioning of the second crystal (x) are separately controlled. Either a fixed or variable exit beam height is obtained over the Bragg angle (θ) range from 6° to 25°. A systematic noise caused by degraded parallelity between the two crystals is observed in extended x-ray absorption fine structure spectra when x and y are simultaneously controlled. This noise is significantly reduced by a versatile control of (x,y): for a typical scan (∼1 keV) only y is allowed to vary while both coordinates are controlled when a monochromator is tuned over a wider energy range. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146622
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  • 3
    Electronic Resource
    Electronic Resource
    Direct observation of the Cu2−xSe phase of Cu-rich epitaxial CuInSe2 grown on GaAs (001) (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6926-6928 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu2−xSe is an important impurity phase of the ternary chalcopyrite semiconductor CuInSe2 associated with Cu/In composition ratios greater than unity. We have observed directly in a prototypical epitaxial system the formation of Cu2−xSe on Cu-rich CuInSe2 thin films epitaxially grown on GaAs (001). Atomic force microscopy measurements of the surface topology of as-grown films clearly show faceted rectangular crystallites with dimensions on the order of 100 nm. Cross-sectional transmission electron microscopy measurements of the Cu-rich CuInSe2 showed rectangular protrusions on the surface as well as wedge shaped facets in the CuInSe2 film. Two-dimensional reciprocal space x-ray mapping of the as-grown Cu-rich CuInSe2 showed the in-plane lattice constant of the Cu2−xSe phase to be partially strained to the CuInSe2 layer. The presence of the β phase of Cu2−xSe is also presented as an alternative explanation for Cu–Pt ordering reports in CuInSe2 that have appeared in the literature. Strain-related surface undulations observed only in Cu-rich CuInSe2 are also linked to the presence of this strained Cu2−xSe layer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368991
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  • 4
    Electronic Resource
    Electronic Resource
    Multipurpose four-circle diffractometer with a crystal analyzer for use with synchrotron radiation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2406-2409 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper describes the performance of a four-circle diffractometer installed at the Photon Factory for extensive use with synchrotron radiation for various investigations in the field of solid state physics. Its main part is based on a Huber 5020.4 type diffractometer with a crystal analyzer designed for vertical diffraction plane attitude. The diffractometer is mounted on a carriage table, which can precisely adjust the position of the diffractometer with respect to the incident beam monochromatized by successive reflection from a pair of Si(111) crystals. With a perfect crystal used as the analyzer the large size of the ω and 2θ circles enables us to make high resolution (ΔQ/Q∼10−4) measurements of x-ray scattering intensity distribution from a single crystal. The large space in the center of the diffractometer permits us to put a pressurizing cell or a cryostat on the φ table for scattering measurements at controlled pressures and temperatures. Selected examples of the application are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140731
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  • 5
    Electronic Resource
    Electronic Resource
    A directly water-cooled silicon crystal for high power insertion devices (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4482-4486 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Directly water-cooled silicon crystals with various types of water channels and cooling fins were fabricated and tested at the 27-pole wiggler beamline BL13 of the Photon Factory. Double-crystal rocking curves for a Si(111) reflection indicated that the performance of a grooved silicon crystal in cooling efficiency is significantly improved by replacing conventional semicircular water channels and cooling fins with flat ones with optimum dimensions. For this design, the width of a Si(111) rocking curve was independent of a wiggler power within 2/3 of the full power. In this power range, a highly stable monochromatized beam with an energy resolution required in x-ray absorption near-edge structure experiments (ΔE/E∼2×10−4) was obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145346
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  • 6
    Electronic Resource
    Electronic Resource
    A new apparatus for surface x-ray absorption and diffraction studies using synchrotron radiation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5477-5485 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new apparatus for structural studies of surfaces and buried interfaces using synchrotron radiation was built and tested at the 27-pole wiggler station BL13B of the Photon Factory. The apparatus was designed to combine x-ray absorption fine structure (XAFS), x-ray standing wave (XSW), and surface x-ray diffraction techniques in the same ultrahigh vacuum (UHV) chamber. The apparatus features a seven-element Si(Li) solid-state detector array for a fluorescence yield measurement and a high precision eight-axis goniometer in the UHV chamber with a base pressure of 1×10−10 Torr. For the same sample mounted on the in-vacuum goniometer, vertically or horizontally polarized surface-sensitive XAFS, surface x-ray diffraction, and XSW can be measured. As a performance test, the structure of Ge overlayers on Si(001) was studied by polarized surface-sensitive XAFS. The results show that the apparatus can probe the local structure of adatoms with ∼0.1 monolayer sensitivity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146072
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of strain and temperature on anomalously large interdiffusion in InAsP/InP heterostructures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3410-3412 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present evidence for anomalously large, strain-dependent interdiffusion in InAs1−xPx layers grown on InP(001) substrates by organometallic vapor phase epitaxy at 620 °C. Specifically, there are strong indications for the existence of a "critical strain:" if the strain is ∼1.9% or more, much P–As mixing occurs, but for smaller strain the mixing is greatly decreased. The interdiffusion is also highly sensitive to temperature. A set of samples grown at 580 °C exhibits a factor of ∼2 decrease in P–As mixing compared to a set grown at 620 °C. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119187
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of the surface Cu2−xSe phase on the growth and properties of CuInSe2 films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1630-1632 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Drastic changes in average molecularities (m=Cu/In) from m(very-much-greater-than)1 to m=0.92–0.93 and in hole concentrations from p(very-much-greater-than)1019 cm−3 to as low as p=7.5×1016 cm−3 have been observed in molecular beam epitaxy grown CuInSe2 after selective etching of the Cu–Se phase by a KCN aqueous solution; high hole concentrations and Cu-excess compositions of the as-grown films were attributed to the Cu–Se phase. On the other hand, well-defined photoluminescence emissions were found characteristic of intrinsic CuInSe2. The presence of the Cu–Se phase made possible the growth of high-quality CuInSe2 epitaxial films at a temperature well below the melting point of any Cu–Se compound. Surface topology measurements showed that the surface of the as-grown films was not fully covered by Cu–Se grains, leaving holes with depths of 200–300 nm after KCN etching. The enhanced two-dimensional growth and the reduced defect concentration imply that a very thin Cu-excess surface layer controls the growth of CuInSe2 when grown under Cu-excess conditions. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123639
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  • 9
    Electronic Resource
    Electronic Resource
    Island growth, strain, and interdiffusion in InAs1−xPx/InP heterostructures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1286-1288 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using x-ray diffraction and transmission electron microscopy we have found that InAs1−xPx films deposited on InP(001) substrates with organometallic vapor phase epitaxy grow in an unusual island growth mode characterized by large strain-dependent interdiffusion. Initially, strong intermixing occurs, producing pseudomorphic islands of intermediate composition. These grow only until some point in the relaxation process, possibly a critical value of the strain, after which islands of the intended composition begin to appear. Furthermore, both types of islands are found to penetrate deeply into the substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114399
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  • 10
    Electronic Resource
    Electronic Resource
    An energy-dispersive spectrometer for the rapid measurement of X-ray absorption spectra using synchrotron radiation (1983)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 16 (1983), S. 220-232 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The design and evaluation of an energy-dispersive spectrometer to measure X-ray absorption spectra rapidly using a synchrotron-radiation source is presented. The method employs a cylindrically bent triangular crystal to focus and disperse a quasi-parallel polychromatic X-ray beam onto the sample. The beam passing through the sample then diverges towards an X-ray detector where beam position can be correlated to energy. Both concentrated and dilute samples were measured on X-ray film and with an electronic linear photodiode array detector and the data analysed to determine the resolution obtained and the data quality. This method is shown to provide an efficient way to obtain high-quality EXAFS and absorption-edge data and should permit kinetic studies to be performed on small samples with good counting statistics. The method should find application in the fields of biophysics, chemistry and materials science.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889883010286
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