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  • 1995-1999  (5)
  • 1995  (5)
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  • 1995-1999  (5)
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  • 1
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0509
    Keywords: Adrenal neoplasms ; Abdomen, CT ; Adrenal adenoma
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Background When an asymptomatic adrenal mass is incidentally discovered on abdominal CT scans, the distinction between a nonhyperfunctioning adenoma and a nonadenoma would be important. Methods We evaluated the CT findings of 36 adrenal masses (14 nonhyperfunctioning adenomas, 22 nonadenomas) in 34 patients with no evidence of hormonal hypersecretion. CT attenuation values of adrenal masses on CT scans were calculated by setting a circular region of interest as large as possible in the center of each adrenal mass. Results Below 20 HU in CT attenuation values, all adrenal masses, except one case of ganglioneuroma with myxomatous change, were nonhyperfunctioning adenomas. With an arbitrary threshold of 20 HU, the sensitivity of CT attenuation values in distinguishing nonhyperfunctioning adenomas from nonadenomas was 64%, the specificity was 95%, and the accuracy was 83%. When decreasing the threshold to 15 HU, the sensitivity was 64%, the specificity was 100%, and the accuracy was 86%. The CT attenuation value on noncontrast CT was more useful for making this distinction than the size and interior homogeneity. Conclusions Our data suggest that an asymptomatic adrenal mass with homogeneous low attenuation (≦15 HU) and less than or equal to 4 cm indicates a nonhyperfunctioning adenoma, and no further examinations are necessary. CT attenuation value on non-contrast CT is the most important discriminatory factor.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3931-3939 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of carrier transport through a thin silicon-oxide layer for 〈spray-deposited indium-tin-oxide (ITO)/silicon-oxide/Si〉 solar cells has been studied by measurements of the dark current density as a function of the thickness of the silicon-oxide layer, together with the observation of transmission electron micrographs. Cross-sectional transmission electron micrography shows that a uniform silicon-oxide layer with the thickness of ∼2 nm is present between ITO and Si when the ITO film is deposited on a flat Si(100) surface at 450 °C. The dark current density under a depletion condition strongly depends on the thickness of the silicon-oxide layer. It is concluded from these results that quantum mechanical tunneling is the dominant mechanism for the charge carrier transport through the silicon-oxide layer. On the other hand, when the ITO film is deposited on a mat-textured Si surface at the same temperature, a nonuniform silicon-oxide layer is formed, with ITO penetrating into the silicon-oxide layer in the top and valley regions of the pyramidal structure. By raising the deposition temperature of the ITO film on the flat Si(100) surface to 500 °C, the silicon-oxide layer becomes also nonuniform. For these diodes with the nonuniform silicon-oxide layer, the carrier transfer probability is less dependent on the thickness of the silicon-oxide layer, leading to the conclusion that minute channels of ITO are present in the silicon-oxide layer and charge carriers transfer through the channels. The photovoltage is decreased by the presence of the minute channels, with its magnitude depending on the density of the channels. The conversion efficiency of the 〈ITO/silicon-oxide/n-Si(100)〉 solar cells is unchanged upon illumination for 1000 h. The good cell stability is attributed to the well-crystallized ITO film which effectively suppresses diffusion of oxygen from the air and to low reactivity of ITO with Si at room temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1301-1307 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc oxide (ZnO)/n-Si junction solar cells were fabricated by a spray-pyrolysis method and high short-circuit photocurrent densities and relatively high photovoltages were obtained by adjusting the conditions of the deposition and the post-deposition heat treatment. Consequently, relatively high conversion efficiencies ranging between 6.9% and 8.5% were obtained. The efficiency of the solar cells with ZnO/n-Si structure decreases slowly with time when they are kept in air in the dark because of the increase in the thickness of the silicon oxide layer between Si and the ZnO film. This degradation can be avoided by forming an indium-tin-oxide (ITO) overlayer on the ZnO film, indicating that the silicon oxide layer grows through the reaction of Si with oxygen diffusing from the atmosphere, not with ZnO. The efficiency of the ZnO/n-Si junction solar cells decreases rapidly with the illumination time. Capacitance-voltage measurements show that this degradation is caused by a decrease in the work function of the ZnO film. The decrease in the work function is caused by desorption of O−2 from the grain boundaries of the ZnO films. When incident light contains no ultraviolet (UV) component, this degradation does not occur, indicating that the desorption is caused by the acceptance of holes generated by UV light. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of neurology 242 (1995), S. 350-351 
    ISSN: 1432-1459
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Type of Medium: Electronic Resource
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