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  • 1995-1999  (4)
  • 1999  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Manufacture of diffraction grating on tiny parts by means of ultraprecision milling (1999)
    Springer
    Microsystem technologies 5 (1999), S. 157-160 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract The study deals with the manufacture of diffraction grating by applying the ultraprecision microgrooving technology. Microgrooving is performed by the use of a lathe-type ultraprecision milling machine having 1 nm positioning accuracy, together with a rotating diamond cutter. As an example of microgroove, a diffraction grating with 32 768 V-shaped grooves is fabricated in a pitch of 1 μm and a depth of 0.5 μm around the circumference of copper disk of 12 mm in diameter. The high-speed rotating cutter allows the microgrooves to be sharply machined without burrs and accumulative pitch errors, taking account of cutting order. The surface roughness of machined grooves is 1 nm (Ra), which experimentally shows good optical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050156
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2534-2536 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of Li-doped ZnO of different compositions (Zn1−xLix)O, x=0.1, 0.17, and 0.3 have been prepared on Si(100) substrates, with no buffer layer, by the pulsed laser deposition method. Ferroelectric behavior with a memory window of 1.2 V has been observed in capacitance–voltage measurements. The peak maximum in the capacitance–temperature curve suggests that the ferroelectric phase transition occurs around 340 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123889
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Serum Levels of Clara Cell 10-kDa Protein Are Decreased in Patients with Asthma (1999)
    Springer
    Lung 177 (1999), S. 45-52 
    Details
    ISSN: 1432-1750
    Keywords: Key words: Clara cell 10-kDa protein—Asthma—Urinary protein 1.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract. Clara cell 10-kDa protein (CC10), the predominant product from nonciliated cells in the epithelial lining of bronchioles (Clara cells), has been shown to have immunomodulatory and antiinflammatory activity and may play a role in controlling airway inflammation. This study was designed to measure serum CC10 concentrations in healthy and asthmatic nonsmokers. Serum CC10 concentrations in asthmatic nonsmokers were significantly lower than in healthy nonsmokers. Asthmatic patients with a long duration of the disease (≥10 years) had significantly lower serum CC10 levels than those with a short duration of the disease (〈10 years). There was no significant difference in serum CC10 levels in asthmatic patients between the time of the asthmatic attack and the stable condition. Serum CC10 levels may reflect decreased production of CC10 caused by remodeling of the small airways in asthma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/PL00007626
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    In-gap density of states in hole- and electron-doped CuO2 planes probed by scanning tunneling spectroscopy (1999)
    Springer
    Applied physics 68 (1999), S. 687-690 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 73.20.At; 73.40.Gk; 74.70.Vy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The low-energy electronic structure of a c-axis SrxAyCuO2 (A is alkaline earth cation, x+y≦1, hole- and electron-doped infinite layer) thin film, grown by laser-molecular-beam epitaxy on a SrTiO3 (001) substrate, has been studied using ultrahigh-vacuum scanning tunneling microscopy/spectroscopy. Images have been obtained for co-deposited SrxAyCuO2 thin films, which show the surface consisting of flat terraces separated by steps that are unit cell high. Tunneling spectra of undoped Sr0.3Ca0.7CuO2 indicate a wide band gap of 1.8 eV which is consistent with the charge transfer gap. Hole-doped Sr0.85CuO2 shows in-gap states appearing at both the valence and conduction band edges. In contrast, for the electron-doped Sr0.9La0.1CuO2, in-gap states appear predominantly above the Fermi level, and the spectral shape becomes asymmetric around the Fermi level. When these two systems are compared, barrier-height measurements reveal that there is no apparent shift of the Fermi level measured from the vacuum level. This suggests that the framework of the rigid-band picture might break down implying a strongly correlated electron system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050961
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    Paper (German National Licenses)
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