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  • 2000-2004  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3032-3036 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization reversal process in permalloy (Ni80Fe20) wire junction structures has been investigated using magnetoresistance (MR) measurements and scanning Kerr microscopy. A combination of electron beam lithography and a lift-off process has been utilized to fabricate wires consisting of two 200 μm length regions with distinct widths w1 and w2 in the range 1–5 μm. Longitudinal MR measurements and magneto-optic Kerr effect hysteresis loops demonstrate that the magnetization reversal of the complete structure is predominantly determined by the wider region for fields applied parallel to the wire axis. Magnetic force microscopy and micromagnetic calculations show that several domain walls nucleate in the wider part and are trapped in the junction area. This implies that domain nucleation at the junction of the wire initiates magnetization reversal in the narrow half. As a consequence, the switching fields are found to be identical in both halves in this case. These results suggest the possibility of designing structures which can be used to "launch" reverse domains in narrow wires within a controlled field range. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7171-7173 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafast magnetization reversal dynamics in a 15-nm-thick Ni80Fe20 microstructure (10 μm×2 μm) is studied using both time-resolved scanning Kerr microscopy and numerical simulation. The time dependence of the magnetization component along the magnetic easy axis reveals a dramatic reduction in switching time, when the magnetization vector is pulsed by a longitudinal switching field while a steady transverse biasing field is applied. According to the time domain images, the abrupt change of the switching time is due to the change in the magnetization reversal mode; i.e., the nucleation dominant reversal process is replaced by domain wall motion if a transverse biasing field is applied. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 892-894 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization vector configurations in an epitaxial Si(001)/Cu/Co/Cu/Fe20Ni80/Cu/Co/Cu double spin valve structure have been investigated at room temperature using polarized neutron reflectivity measurements. The layer-averaged magnetic moment per FeNi atom was found to be 0.99±0.06 μB at saturation, while the top (bottom) Co layer moment was 1.69±0.09 μB (1.67±0.08 μB), which are identical to the bulk values within experimental error. Furthermore, the Co magnetization vectors are found to lie in-plane but canted with respect to the applied field direction for an applied field strength smaller than the coercive fields (∼80 and 130 Oe) of the Co layers. This result indicates that a complete antiparallel alignment of the layer magnetizations is not reached causing a corresponding reduction in the giant magnetoresistance (GMR). These observations emphasize the importance of the detailed spin configuration in determining the GMR amplitude at low fields. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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