Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Laser beam interference effects on the photovoltage of a p-n junction diode (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5459-5463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photovoltage developed by a p-n junction diode illuminated by an interference pattern through a slit depends both on the distance between fringes and the phase of the interference pattern relative to the position of the slit. For a slit width which accommodates an integer number N of fringes, the voltage is independent of the phase of the pattern but this is no longer the case for a noninteger number of fringes. The maximum dependence is observed for N+1/2 fringes within the slit but the effect decreases as N increases. When the fringe distance is no longer negligible compared to the minority carrier diffusion length the dependence of the photovoltage on the number of fringes becomes more pronounced. A theory is presented which shows how the diffusion length can be obtained from the experimental data. Experiments on GaAs and Si diodes are reported. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362735
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Thermal stability of sulfur-treated InP investigated by photoluminescence (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4052-4057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of sulfur (S) treatments on InP is investigated by low-temperature photoluminescence (PL) measurements. For both n- and p-InP, the PL intensity is observed to increase about four times in magnitude if the scattering by the S overlayer is relatively small. Some PL bands are observed to disappear after S treatments and then reappear if the S-treated surface is heat treated at 220 °C in a vacuum of 10−3 Torr. By observing their dependence on the excitation power density, the doping level of the samples, and measurement temperature, these PL bands are ascribed to the optical transitions via surface states. Our results thus indicate that the S-treated InP surface may not be stable at a subsequent processing temperature of about 250 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363366
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Optical and structural properties of ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5951-5954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructures by molecular-beam epitaxy. Strain on the ZnSSe layer is calculated from x-ray and photoluminescence data. The temperature dependence of band-gap energy and the photoluminescence intensity in the Cl-doped ZnCdSe active layers is compared with that of undoped ones. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363590
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Structural and optical properties in ZnTe/GaAs strained heterostructures grown by temperature-gradient vapor transport deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8216-8218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lattice-mismatched ZnTe epilayer on a GaAs(100) substrate was grown by the simple method of temperature-gradient vapor deposition. X-ray diffractometry measurements were performed to investigate the structural properties of the ZnTe layer. Raman spectroscopy measurements showed that there was a lattice mismatch between the ZnTe epitaxial layer and the GaAs substrate. Reflectivity and photoreflectance measurements clearly revealed the splitting of the valence-band maximum, and photoluminescence measurements showed several resonant excitations of the ZnTe. The binding energies of the light holes and heavy holes determined from the splittings are in reasonable agreement with the bulk values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356526
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    The hydridation and nitridation of GeSi oxide annealed in ammonia (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2631-2634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 110-nm-thick Ge0.38Si0.62O2 film on Ge0.38Si0.62 was annealed in NH3 at 700 °C for 4 h and analyzed by Auger electron spectroscopy, backscattering spectrometry, x-ray photoelectron spectroscopy, and secondary-ion mass spectrometry. In the surface region of the oxide film, this annealing results in an incorporation of nitrogen bonded to germanium by the nitridation of GeO2. In the bottom region of the oxide film near the GeSi/oxide interface, elemental Ge appears. We attribute this process to the hydridation of GeO2 with hydrogen that comes from dissociated ammonia. Results obtained at 800 °C for a 380-nm-thick oxide film are similar. A model is proposed to explain the observed changes of the oxide after the ammonia annealing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360123
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    O2(X,v=8–22) 300 K quenching rate coefficients for O2 and N2, and O2(x) vibrational distribution from 248 nm O3 photodissociation (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 287-300 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Vibrationally excited oxygen (O
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.466997
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Zeff profiles measured by visible and soft x-ray bremsstrahlung arrays in TFTR (abstract)a) : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 635-635 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Zeff profiles from the tangential array of visible bremsstrahlung (VB) emission (5235 A(ring)) have shown several interesting features in TFTR. The observed Zeff profile was flat during the ohmic phase and hollow during the neutral-beam heating phase. In order to crosscheck the measured Zeff profiles from the VB array, a poloidal array which measures bremsstrahlung emission in the soft x-ray region has been analyzed. The analysis of array measurements in the two different spectral regions was performed on the same geometry determined from the Abel inversion of the electron density (interferometry). The two independent measurements of Zeff profiles have been consistent with each other for most of the discharges in TFTR. However, in a discharge where the two measurements are inconsistent, the Zeff profile deduced from the VB array indicates some degree of problems. In this paper, the detailed analysis of the bremsstrahlung array (both poloidal and tangential) measurements is presented. Particularly, the effects of geometry in the inversion process, such as a poloidal elongation of flux surfaces, are investigated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146310
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Identification of Alfvén mode location via multichannel interferometer measurements (abstract) : Proceedings of the eleventh topical conference on high temperature plasma diagnostics (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 698-698 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Quasicoherent magnetohydrodynamics modes with an Alfvén frequency scaling are seen routinely in TFTR neutral beam heated plasmas as well as some Ohmic plasmas. So far, they are only observed in external magnetic fluctuation measurement (Mirnov coils). A close correlation is observed between the changes in the mode frequency and electron density measured by the multichannel infrared interferometer. This correlation allows us to determine the location of the Alfvén modes. The result shows that they are near the plasma edge, r/a〉0.85. This method is also used to identify the location of the toroidicity-induced Alfvén eigenmode driven by fast ions in a radiowave heating experiment. The result is consistent with the location determined by the reflectometer measurement.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147925
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy study of CaS:Eu and SrS:Eu phosphors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4546-4549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phosphors of alkali-earth sulfides SrS:Eux (x=0.05 and 0.10 mole per mole of SrS), SrSO:Eux (x=0.05), and CaS:Eux (x=0.0005, 0.05, and 0.10) were studied by x-ray photoelectron spectroscopy. The CaS:Eu phosphors were found to be stabilized against atmospheric water vapor and carbon dioxide by annealing at high temperature for several hours. The S 2p core level shows that the chemical state of sulfur changes abruptly from −2 to +6 between the annealing temperature of 900 and 1100 °C. The Ca core level, on the other hand, does not show much change depending on the annealing temperature. From the Eu 3d core-level spectra of SrS:Eux and CaS:Eux (x=0.10) phosphors, we confirm that the valence state of Eu in these phosphors is Eu3+.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352799
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Adhesion and mechanical properties of amorphic diamond films prepared by a laser plasma discharge source (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1446-1453 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphic diamond films can be grown in an ultrahigh vacuum environment free from hydrogen with a laser plasma discharge source. This technique produces films that adhere more readily to materials for which there are important applications as protective coatings. In this work adhesion and mechanical properties of amorphic diamond films have been examined. A beam bending method has been used to measure the internal stress and a relatively low value of compressive stress was found. The dependence of stress on the laser intensities at the graphite ablation target has been studied. Analyses of these films on silicon, SiO2, ZnS, and TiAl6V4 by Rutherford backscattering spectrometry show significant interfacial layers with compositions of SiC, C0.5SiO2, C2.5ZnS, and C0.62Ti0.35Al0.05V0.02, respectively. Adhesion properties on ZnS and other substrates have also been examined for harsh environments. The mechanical properties of hardness, Young's modulus, and stiffness have been obtained with a nanoindentation technique. These results together with the minimal amount of hydrogen in our process, make amorphic diamond an excellent candidate for direct deposition on several substrates including ZnS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351267
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...