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  • 1
    Electronic Resource
    Electronic Resource
    Interactions between Dopants and End-of-Range Defects in Silicon (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 47-48 (July 1995), p. 195-204 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.47-48.195.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Phosphorus-enhanced diffusion of antimony due to generation of self-interstitials (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1623-1629 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a series of experiments, the influence of phosphorus diffusion at high concentrations on the diffusion of an antimony marker layer was investigated. The marker layer was separated from the surface by a 4 μm layer of epitaxially grown silicon. To reduce the effects of implantation enhancement and phosphorus precipitation on the diffusion of the antimony marker layer, the phosphorus was implanted into a polysilicon layer deposited on top of the single-crystalline substrate. It was found that the diffusion of the antimony marker layer is already reduced by the epilayer. From these diffusion coefficients, upper limits for the fractional diffusivity of antimony were derived. In contrast to previous investigations, the diffusion of the antimony marker layer was found to be enhanced below regions where phosphorus was implanted. A comparison of diffusion in FZ and CZ samples shows that this enhanced diffusion of antimony can be explained only by an injection of self-interstitials from the phosphorus-doped region. Since the polysilicon layer was found to recrystallize, this self-interstitial injection can be the result of phosphorus diffusing mainly via self-interstitials, phosphorus precipitation, or both. Using Boltzmann–Matano analysis and antimony diffusivity data, the fractional diffusivity of phosphorus via self-interstitials was estimated to be lower than 0.71 at 950 °C. Possible sources of error in this estimation are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360256
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  • 3
    Electronic Resource
    Electronic Resource
    Lateral damage extension during masked ion implantation into GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4303-4307 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied both experimentally and theoretically the generation of damage in GaAs due to ion implantation through mask openings of small dimensions. We show that it is possible to master the generation of damage, i.e., the amorphization phenomenon in the direction perpendicular to the ion beam and close to the mask edges. A theoretical model is used to simulate the ion implantation process and damage accumulation through Ti–Au masks. After comparing the shape of the crystalline/amorphous interfaces as revealed by cross-sectional electron microscopy with our simulations, this model is used to predict the evolution of the two-dimensional damage distributions beneath the mask edges as functions of ion beam and implantation mask parameters. Undamaged regions of nanometer dimensions can be preserved even when using masks of reasonable dimensions (100–200 nm). This can be done only by adjusting the ion beam parameters through the accurate simulation of the two-dimensional damage generation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363378
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  • 4
    Electronic Resource
    Electronic Resource
    Transient enhanced diffusion of boron in presence of end-of-range defects (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2855-2861 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The presence of a supersaturation of Si self-interstitials in ion implanted silicon has been shown to be the origin of several physical phenomena such as transient enhanced diffusion (TED) of boron, the formation of extended defects at the projected range of implanted atoms at doses below the amorphization threshold, and the formation of end-of-range (EOR) defects in the case of a preamorphization stage. In this article, we discuss the relation between boron anomalous diffusion and end-of-range defects. Modeling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to give access to the variations of the mean supersaturation of Si self-interstitial atoms between the loops and also to be responsible for anomalous diffusion. This initial supersaturation is, before annealing, at least five decades larger than the equilibrium value and exponentially decays with time upon annealing with activation energies that are the same as the ones observed for TED. It is shown that this time decay is precisely at the origin of the transient enhancement of boron diffusivity through the interstitial component of boron diffusion. Side experiments shed light on the effect of the proximity of a free surface on the thermal behavior of EOR defects and allow us to quantitatively describe the space and time evolutions of boron diffusivity upon annealing of preamorphized Si layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366117
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  • 5
    Electronic Resource
    Electronic Resource
    The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 365-367 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the doping level on the formation and growth of end-of-range (EOR) defects is studied. Transmission electron microscopy observations have been performed on boron doped Si wafers (from 1015 to 1020 atom3) preamorphized with germanium and subjected to rapid thermal annealing. When increasing the doping level up to a few 1018 atom3, a delay in the coarsening process encountered by the loops is observed while above this threshold the EOR defects quickly disappear. These results are interpreted by considering three possibly concomitant phenomena: the formation of boron/Si-interstitial clusters, the gettering of boron at the loop periphery, and a change from the intrinsic to the extrinsic regime for self-diffusion. Moreover, an estimate of the effective trapping efficiency of boron is reached and gives about 1±0.3 Si interstitial per boron atom, a value consistent with the one obtained from studies of B transient enhanced diffusion. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119563
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  • 6
    Electronic Resource
    Electronic Resource
    High strain effects evidenced by Raman scattering in arsenic clusters in As-implanted GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1927-1929 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering has been used to track structural information on arsenic clusters in GaAs obtained by annealing of high dose As-implanted GaAs layers. Beyond the good crystalline quality of both the clusters and the matrix, high tensile stresses within the precipitates have been originally deduced from the A1g and Eg mode frequency shifts. The results are well explained in terms of the difference between the thermal expansion coefficients of the two materials. The temperature dependence of the stresses corroborates this interpretation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113279
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  • 7
    Electronic Resource
    Electronic Resource
    Synthesis, characterization and use of reactive polymers with diisopropylphenylphosphine groups (1997)
    Springer
    Polymer bulletin 39 (1997), S. 551-557 
    Details
    ISSN: 1436-2449
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The synthesis of linear and crosslinked polymers starting with 4-(diisopropyl-phosphinyl) styrene is described. Treatment with triphosgene yields the corresponding phosphine dichloride group in the polymers. Using these reactive polymers benzyl alcohol was converted to benzyl chloride at room temperature. The regeneration of the reactive polymers using triphosgene was achieved. The yields of benzyl chloride were in general lower than those previously reported using triphenylphosphine dichloride groups in the polymers. The difference in reactivity between triphenylphosphine dichloride- and diisopropylphenylphosphine dichloride substituted-polymers are discussed with the aid of semi-empirical computer calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002890050185
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  • 8
    Electronic Resource
    Electronic Resource
    Synthesis and regeneration of reactive polymers bearing triphenylphosphine dichloride functional groups using triphosgene (1996)
    Springer
    Polymer bulletin 37 (1996), S. 415-421 
    Details
    ISSN: 1436-2449
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Summary A new methodology is described for the synthesis of reactive polymers bearing triphenylphosphine dichloride groups by the use of triphosgene. These materials show high reactivity for the room temperature conversion of benzyl alcohol to benzyl chloride. In one hour, yields higher than 90% were achieved using reactive copolymers with up to 25 w% divinylbenzene (DVB). The functional groups can be easily and efficiently regenerated using 1.0 mol of triphosgene for every 2.6 moles of phosphine in the polymer. Preliminary results showed up to 40% conversion of benzyl alcohol in column reactions using regenerated polymers at 5 to 10 min contact times.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00556799
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  • 9
    Electronic Resource
    Electronic Resource
    Preparation of MoS2 and WS2 catalysts by in situ decomposition of ammonium thiosalts (1998)
    Springer
    Catalysis letters 52 (1998), S. 55-61 
    Details
    ISSN: 1572-879X
    Keywords: MoS2 ; WS2 ; thiosalts ; in situ activation ; hydrodesulfurization ; mechanochemistry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The in situ decomposition of ammonium thiometallates during the hydrodesulfurization (HDS) of dibenzothiophene (DBT), to obtain molybdenum disulfide and tungsten disulfide catalysts, was investigated. It was found that very efficient catalysts for the HDS of DBT were obtained by in situ decomposition. Mechanical uniaxial pressing of the precursors (ammonium thiometallates) affected both textural and catalytic properties of the catalysts. Surface areas of molybdenum and tungsten disulfides increased as a function of uniaxial pressing, while catalytic activities went through a maximum. For MoS2, the hydrogenation selectivity was much higher for in situ catalysts than for ex situ ones. For WS2 catalysts, the hydrogenation selectivity was less sensitive to the condition of decomposition (ex situ/in situ). The surface S/M (M = Mo, W) atomic ratio from the Auger signal decreased as a function of uniaxial pressing, while the C/M ratio remained almost constant at 1.6. The best catalyst showed an experimental S/Mo ratio that is slightly higher than the stoichiometric value. The effect of in situ decomposition and mechanical deformation of thiometallate precursors is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1019067319305
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  • 10
    Electronic Resource
    Electronic Resource
    Determination of the Intragrain Critical Current Density and Thermogravimetric Analysis on YBCO/Ag Superconductors Irradiated with 60Co Gamma Rays (1999)
    Springer
    Journal of superconductivity 12 (1999), S. 641-648 
    Details
    ISSN: 1572-9605
    Keywords: YBaCuO ; gamma irradiation ; critical current density ; flux pinning
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We investigated the flux pinning behavior induced by gamma irradiation in Y1Ba2Cu3O(7−x) silver-added samples. The superconductors were prepared through solid-state route and added with silver in amounts of 0-, 6.5-, and 20-wt%, following which the samples were irradiated by high-energy gamma irradiation (γ) at doses of 0, 500, and 1500 kGy at the dosage rate of 8.2 kGy/h. We performed magnetization loops to study the flux pinning of vortex in YBCO/Ag superconductors. We found that silver addition and irradiation on superconductors may increase the width in magnetization loops, which is related to the enhancement in the critical current density, J c . We established that an interaction between silver addition and irradiation that results in higher values in J c for YBCO/Ag irradiated samples already exists. The J c in samples containing 20-wt% of silver decreased with irradiation because a higher content of silver produces small crystals and secondary phases growing. On comparing the TGA analysis for both YBCO and YBCO/Ag samples, we found higher-weight oxygen losses in YBCO silver samples, which suggests that silver increases the oxygen saturation content. The higher oxygen content found on irradiated specimens it is indicative of oxygen losses from CuO chains or CuO2 planes reached by γ-irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007748018298
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