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  • 1995-1999  (18)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    On the threshold voltage and channel conductance of polycrystalline silicon thin-film transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4431-4437 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the grain-boundary barrier height of undoped polycrystalline silicon thin-film transistors is developed based on a rodlike structure of the grains with a square cross section and a Gaussian energy distribution of the trapping states at the grain boundaries. An analytical expression for the threshold voltage is derived in terms of the distribution parameters of the grain-boundary trapping states, the grain size, and the gate oxide thickness. Comparison between the developed model and the experimental drain current versus gate voltage data has been made and excellent agreement was obtained. The key parameters affecting the threshold voltage and the channel conductance of the transistor were investigated by computer stimulation. The threshold voltage is mainly affected by the grain size and the gate oxide thickness. For the improvement of the channel conductance, besides the passivation of the grain-boundary trapping states, the increase of the grain size and mainly the scaling down of the gate oxide thickness are the key factors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361752
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  • 2
    Electronic Resource
    Electronic Resource
    Low frequency noise in β-FeSi2/n-Si heterojunctions (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 713-715 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low frequency noise of β-FeSi2/n-Si heterojunctions has been systematically studied with the silicide layer formed by conventional furnace and rapid thermal annealing processes. The noise was found to exhibit 1/f behavior attributed to fluctuations of the generation-recombination current at the interface states. It is shown that noise measurements provide a means of calculating the density and energy distribution of the interface states. The results show that the interface state density is significantly reduced when the silicide is formed by rapid thermal annealing process. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120854
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  • 3
    Electronic Resource
    Electronic Resource
    Output characteristics of short-channel polycrystalline silicon thin-film transistors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2177-2183 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical model for the turn-on current-voltage characteristics of polycrystalline silicon thin-film transistors is presented. The model is based on the drift diffusion-thermionic emission conduction mechanisms and on a continuous distribution in the energy gap of the traps localized at the grain boundaries. The trap distribution and the device parameters involved in the model are determined by fitting the calculated on-state current versus gate voltage curve to the measured one in the linear region. At large drain voltage, the barrier height at the grain boundary becomes asymmetric and the injection of carriers from the lowered barrier side of the boundary is increased resulting in an exponential increase of the drain current with the drain voltage. Using the parameters obtained from the data in the linear region, the output characteristics are calculated. The good agreement between calculated results and experimental data at room temperature and at higher temperatures demonstrates the validity of the proposed current-voltage model. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358796
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4600-4606 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical properties of excimer laser annealed polycrystalline silicon thin-film transistors (polysilicon TFTs) are investigated in relation to the laser energy density. The devices were fabricated on 50 nm thick polysilicon films prepared by excimer laser crystallization (ELA) of amorphous silicon or by a combined solid phase crystallization (SPC) and ELA process. The structural properties of the polysilicon films have been investigated by transmission electron microscopy analysis. The effective density of states distributions in the polysilicon films and in the oxide traps near the oxide/polysilicon interface have been determined from low frequency noise measurements. The TFT performance parameters are compared with respect to their correlation with the structural properties of the polysilicon films and their electrically active defects, the basic variables being the starting material (amorphous silicon or SPC polysilicon) and the laser energy density. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371409
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  • 5
    Electronic Resource
    Electronic Resource
    Photon emission and related hot-carrier effects in polycrystalline silicon thin-film transistors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6917-6919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photon emission induced by the drain avalanche in polycrystalline silicon thin-film transistors (polysilicon TFTs) has been studied in wide drain and gate voltage ranges. As the photon emission phenomenon is closely related to hot-carrier effects, the gate and drain bias conditions for maximum device degradation have been determined from measurements of the emitted light intensity. In n-channel polysilicon TFTs, the effects of bias stressing at the maximum light emission are related to hot-hole trapping into the gate oxide near the drain and to formation of acceptor-like interface states consisted of midgap states and band tails. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370105
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  • 6
    Electronic Resource
    Electronic Resource
    Characteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4238-4242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the substrate bias voltage and the deposition temperature on the electrical characteristics and the 1/f noise of TiNx/n-Si Schottky diodes fabricated by reactive magnetron sputtering are investigated. As the substrate bias voltage varies from −40 to −100 V, the ideality factor of the diodes remain almost unchanged whereas the noise intensity as a function of the current shows a shift parallel by about one order of magnitude. At low current levels, the noise intensity is proportional to the current and is attributed to the mobility and diffusivity fluctuation. At higher current levels, the noise intensity is proportional to the square of the current and is attributed to bulk traps mainly near the interface. Analysis of the noise measurements shows that both the Hooge parameter and the bulk trap density near the interface first are increased and then decreased as the negative substrate bias voltage increases from −40 to −100 V. This is in contrast with the effects of the deposition temperature where we found that the Hooge parameter remains almost constant, while both the ideality factor and the interface states density are decreased as the deposition temperature increases from room temperature to 400 °C. The trap properties of the TiNx/n-Si Schottky diodes are correlated with the stoichiometry of the TiNx films investigated by spectroscopic ellipsometry measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370336
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  • 7
    Electronic Resource
    Electronic Resource
    Dimension scaling of low frequency noise in the drain current of polycrystalline silicon thin-film transistors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 7083-7086 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results of low frequency noise in polycrystalline silicon thin-film transistors (polysilicon TFTs) with varying gate dimensions (constant gate width W and varying gate length L) are presented. The power spectral density of the drain current fluctuations SI was found to depend linearly on the inverse of the effective gate area Ag,eff which is related to the gate area W×L and the number of grains present within the transistor channel. This result implies localization of the low frequency noise sources on the gate oxide-polysilicon interface and on the grain boundaries. The 1/Ag,eff scaling law must be taken into account for correct estimation of trap densities in polysilicon TFTs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371721
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  • 8
    Electronic Resource
    Electronic Resource
    1/fγ noise in polycrystalline silicon thin-film transistors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3934-3936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon thin-film transistors show a 1/fγ (with γ〈1) low frequency noise behavior. The 1/fγ noise is explained by emission and trapping processes of carriers between trapping states located within an energy range of kT around the Fermi level and the exponential tail states. We have derived a simple relationship between the frequency index γ of the noise spectrum and the energy distribution parameter of the tail states. From the experimental noise data, the theoretical model allows us to determine the tail states energy distribution and the grain boundary trap density. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369770
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  • 9
    Electronic Resource
    Electronic Resource
    Combined electrical and mechanical properties of titanium nitride thin films as metallization materials (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5296-5298 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium nitride (TiNx) thin films, ∼100 nm thick, were deposited on Si(100) substrates by dc reactive magnetron sputtering. The effects of the substrate bias voltage and deposition temperature on their optical, electrical, and mechanical properties have been studied. It was found a strong correlation between the electrical and mechanical properties of the films which are significantly improved with increasing the substrate bias voltage and the deposition temperature. The low resistivity (43 μΩ cm), combined with the high hardness and elastic modulus values, suggest the TiNx as a promising metallization material in Si technology. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371514
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  • 10
    Electronic Resource
    Electronic Resource
    Low-frequency noise in polycrystalline semiconducting FeSi2 thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4091-4095 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise measurements have been carried out at room temperature in polycrystalline semiconducting iron disilicide (β-FeSi2) thin film with the current I as a parameter. The power spectral density of the current fluctuations exhibits a 1/f behavior at low frequencies (f〈100 Hz) and is proportional to Iβ (β〈2). The temperature dependence of the conductivity shows that, at room temperature, the measured noise is related to a thermally activated transport mechanism, which satisfies the Meyer–Neldel rule. A noise theory has been developed on the basis of trapping-detrapping of holes of the valence band and the gap states taking into account mobility inhomogeneity across the thickness of the film. Using the experimental data of Hall, conductivity, and noise measurements, the noise model provides an assessment of the distribution of traps within the energy gap of the β-FeSi2 material. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370316
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