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  • 1995-1999  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Oxidation-induced traps near SiO2/SiGe interface (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1542-1547 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using an Al/SiO2(wet)/Si0.9Ge0.1/n–Si/Al capacitor structure, effects of oxidation on bulk trap and interface states near the SiO2/SiGe interface are investigated. Two peaks at the energy levels of 0.23 eV (D1) and 0.40 eV (D2) below the conduction band edge are observed with the capacitance deep level transient spectroscopy (DLTS) method. The DLTS measurement results show a characteristic feature of interface states for the D1 peak. The interface state distribution obtained by the capacitance–voltage method also has a high density (6.9×1012/cm2 eV) peak at an energy level of 0.23 eV below the conduction band edge. The Si–O– dangling bonds are thought to be the source of the D1 peak. The annealing behaviors of the D2 peak show that D2 is a divacancy related bulk trap. The capture cross section and the trap density for the bulk trap D2 are 2.06×10−15/cm2 and 1.8×1014/cm3, respectively. The density of D2 is significantly reduced after low temperature postmetallization annealing. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370927
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Two dimensional trapezoidal fins analysis (1997)
    Springer
    Computational mechanics 19 (1997), S. 247-250 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A comparison of the heat loss from trapezoidal fins of various slopes (triangular to rectangular) is made. The method used produces accurate solutions to the general conduction equation and Fourier law for . The resulting relationship between the non-dimensional fin length and the slope of the fin's lateral surface for equal amounts of heat loss for given values of Biot numbers is also demonstrated. For this analysis, the same equation is used for all of the trapezoidal shapes by adjusting the value of the lateral surface slope. For simplicity, the fin root temperature and the fin's surrounding convection coefficients are assumed constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004660050173
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of Annealing on the Carrier Concentrations and the Deep Levels in CdTe Single Crystals (1999)
    Springer
    Journal of materials science 18 (1999), S. 695-697 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006688010827
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Isolation of an extragenic suppressor of the rna1-1 mutation in Saccharomyces cerevisiae (1998)
    Springer
    Molecular genetics and genomics 259 (1998), S. 404-413 
    Details
    ISSN: 1617-4623
    Keywords: Key wordsrna1-1 ; SRN10 ; RanGAP1 ; Nuclear transport ; yeast
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The small GTPase Ran is essential for nucleocytoplasmic transport of macromolecules. In the yeast Saccharomyces cerevisiae, Rna1p functions as a Ran-GTPase activating protein (RanGAP1). Strains carrying the rna1-1 mutation exhibit defects in nuclear transport and, as a consequence, accumulate precursor tRNAs. We have isolated two recessive suppressors of the rna1-1 mutation. Further characterization of one of the suppressor mutations, srn10-1, reveals that the mutation (i) can not bypass the need for Rna1p function and (ii) suppresses the accumulation of unspliced pre-tRNA caused by rna1-1. The SRN10 gene is not essential for cell viability and encodes an acidic protein (pI = 5.27) of 24.8 kDa. Srn10p is located in the cytoplasm, as determined by indirect immunofluorescence microscopy. Two-hybrid analysis reveals that there is a physical interaction between Srn10p and Rna1p in vivo. Our results identify a protein that interacts with the yeast RanGAP1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004380050830
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Expression of recombinant human interleukin 6 ( rhIL6) in Saccharomyces cerevisiae by the modified phosphoglycerate kinase and chelatin promoter (1997)
    Springer
    Biotechnology letters 19 (1997), S. 1169-1173 
    Details
    ISSN: 1573-6776
    Source: Springer Online Journal Archives 1860-2000
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract Using the modified yeast expression vectors that contained phosphoglycerate kinase or chelatin promoter with the adenine (A) base at –3 position from the ATG coding sequences and the leu-2 gene, recombinant human inter-leukin-6 ( rhIL-6) was produced as a b-galactosidase ( lacZ) fusion protein in Saccharomyces cerevisiae. Expression level of the IL-6-lacZ was 12 times higher than that from the unmodified wild type plasmids and IL-6 activity was 9–9.8 x 10 5 unit/mg yeast total protein. Thus these modified yeast vectors are useful for high expression of foreign genes in yeast
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018421517371
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    Paper (German National Licenses)
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