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  • 1995-1999  (9)
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  • 1
    Electronic Resource
    Electronic Resource
    Comprehensive Rutherford backscattering and channeling study of ion-beam-synthesized ErSi1.7 layers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6920-6925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial ErSi1.7 layers with excellent crystallinity (χmin of Er is 1.5%) have been prepared by high-dose 90 keV Er implantation into a Si(111) substrate using channeled implantation. Such an ErSi1.7/Si system offers a rare opportunity to study comprehensively the structure, orientation, and strain using Rutherford backscattering spectrometry and channeling analysis. We found that the minimum yield and width of the [0001] dip of the Er atoms are quite different from that of the Si atoms in the silicide layer. It is confirmed that the azimuthal orientation of the hexagonal ErSi1.7 layer to the cubic Si substrate is ErSi1.7 [0001] (parallel) Si[111] and ErSi1.7 {112¯0} (parallel) Si {110}, and that the epilayer is compressively strained. Besides, by using the angular scan and image scan, we reveal that the dips of the {101¯0} family are missing for the Si atoms in the epilayer but do exist for the Er atoms in the same epilayer. The reason for this drastic difference is explained by the separate {101¯0} planes and the different steering potential of the Si and Er atoms in ErSi1.7. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361516
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  • 2
    Electronic Resource
    Electronic Resource
    Structural characterization of ion-beam synthesized NiSi2 layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1707-1712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NiSi2(111) and NiSi2(100) layers with good crystalline quality have been formed by ion-beam synthesis. An unusual Ni atom distribution showing two completely separated layers during a single implantation step has been observed by Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). The orientation, strain, and stiffness of the NiSi2 layers have been studied by RBS/channeling, x-ray diffraction, and TEM. The results show that the continuous NiSi2 layers have type-A orientation with a parallel elastic strain larger than the theoretical value of 0.46% for pseudomorphic growth. The perpendicular strain of the NiSi2(111) layers is apparently smaller than that of NiSi2(100) layers, indicating a higher stiffness in the 〈111〉 direction. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360268
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Step decoration during deposition of Co on Ag(001) by ultralow energy ion beams (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 938-940 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A possibility for decorating atomic steps on single-crystal surfaces by using ultralow energy ion beams is reported. Isotopically pure ion beams are produced by a mass separator and subsequently decelerated by an electrostatic lens. The lens was designed to allow sweeping of the ion beam in order to obtain a uniform deposition over a large area. The preferred sites of single Co atoms on Ag are investigated with in situ scanning tunneling microscopy measurements. A clear indication is found that by increasing the energy of the deposited Co to several electron volts, an enhanced Co decoration of the Ag steps is induced. This technology opens perspectives for an increasing number of elements which can form self-organized nanostructures such as atomic wires on vicinal crystal surfaces. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124560
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5713-5717 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ErSi1.7 layers with high crystalline quality (χmin of Er is 1.5%) have been formed by 90 keV Er ion implantation to a dose of 1.6×1017/cm2 at 450 °C using channeled implantation. The perpendicular and parallel elastic strain e⊥=−0.94%±0.02% and e(parallel)=1.24%±0.08% of the heteroepitaxial erbium silicide layers have been measured with symmetric and asymmetric x-ray reflections using a double-crystal x-ray diffractometer. The deduced tetragonal distortion eT(XRD)=e(parallel)−e⊥ =2.18%±0.10%, which is consistent with the value eT(RBS)=2.14±0.17% deduced from the Rutherford backscattering and channeling measurements. The quasipseudomorphic growth of the epilayer and the stiffness along a and c axes of the epilayer deduced from the x-ray diffraction are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363623
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  • 5
    Electronic Resource
    Electronic Resource
    Size distribution and magnetic behavior of lead inclusions in silicon single crystals (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2148-2152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The size distribution of Pb inclusions formed by high-dose ion implantation in crystalline Si has been studied with a variety of experimental techniques. Results obtained from small angle x-ray scattering, transmission electron microscopy, and low-temperature magnetic moment measurements are compared. For samples implanted at room temperature, the results depend on which technique has been used, due to the amorphization of the silicon. The experiments on the samples implanted at an elevated temperature yield compatible results. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364267
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  • 6
    Electronic Resource
    Electronic Resource
    A combined Mössbauer and Rutherford backscattering spectroscopy analysis of the influence of nanosized cavities on CoSi2 formation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3584-3586 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For Co in Si, the competition between CoSi2 formation and cavity trapping is studied by Rutherford backscattering and Mössbauer spectroscopy. The presence of nanosized voids hampers the formation of a buried epitaxial silicide layer in its initial phase, preventing the small CoSi2 particles from forming a bulk layer. The Mössbauer spectra show that a pre-existing silicide phase can be partially dissolved in favor of cavity trapping. In addition, channeling measurements provide qualitative information about the voids, showing that the thermal stability of the voids is much higher than for defects resulting from self-implantation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117214
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  • 7
    Electronic Resource
    Electronic Resource
    Importance of channeled implantation to the synthesis of erbium silicide layers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3886-3888 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 166Er atoms were implanted with an energy of 70 to 90 keV and doses of 0.8 to 2.0×1017/cm2 into Si(111) substrates at temperatures ranging from 450 to 530 °C. We found that using conventional nonchanneled implantation at energies of ∼90 keV, it is impossible to form a continuous ErSi1.7 layer. At best, after annealing, a discontinuous ErSi1.7 layer with poor crystalline quality (χmin=40%) is obtained. On the contrary, using channeled implantation, a continuous epitaxial ErSi1.7 layer with very good crystalline quality can be formed; a lowest χmin value of 1.5% for a surface ErSi1.7 layer has been obtained. The origin of this different behavior is explained. Our results show that for synthesizing continuous ErSi1.7 layers with good quality using ion beam synthesis at energies around 90 keV, channeled implantation is indispensable. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115306
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  • 8
    Electronic Resource
    Electronic Resource
    Crystalline quality and phase stability of hexagonal GdSi1.7 layers formed by channeled ion-beam synthesis (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3260-3262 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previous reports show that, among all rare-earth silicides, GdSi1.7 is the most difficult one to grow epitaxially with a good crystalline quality on a Si substrate. However, this letter shows that by using channeled implantation, a continuous GdSi1.7 layer with good crystalline quality (χmin=10%) can be formed by implantation of 90 keV Gd ions in Si(111). Besides, the hexagonal phase of the GdSi1.7 layer is stable up to a temperature of 850 °C for 30 min, which is much more stable than previously reported. After annealing at temperatures ≥900 °C for 30 min, the hexagonal GdSi1.7 phase transforms into the orthorhombic GdSi2 phase. Rutherford backscattering/channeling, transmission electron microscopy, and x-ray diffraction are used in this study. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116567
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  • 9
    Electronic Resource
    Electronic Resource
    Embedded nanocrystallites prepared by ion implantation (1998)
    Springer
    Hyperfine interactions 113 (1998), S. 165-181 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Nanocrystallites embedded in substrates (granular materials) prepared by ion implantation have many unusual properties in comparison with bulk materials. Features are found such as high magnetic coercivity, size effect of the effective magnetic moment per atom, dependence of the interface magnetic hyperfine field on the Co concentration, nonlinear photoluminescence as well as charge transfer. We show that CEMS and emission Mössbauer spectroscopy are powerful tools for studying these granular systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1012671632258
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