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  • 1
    ISSN: 1432-0533
    Keywords: Granulovacuolar degeneration ; Hippocampus ; Topography ; Aging ; Dementia
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The occurrence and topographic analysis of granulovacuolar degeneration (GVD) in the hippocampal cortex of mentally normal controls (75 cases) and patients with Alzheimer's dementia (AD; 17 cases which included Alzheimer's disease and senile dementia of Alzheimer type), multi-infarct dementia (MID; 16 cases), Pick's disease (PD; 5 cases) and atypical dementia [5 cases; non-Alzheimer, non-Pick dementia with Fahr's syndrome (NANPDF)] were investigated. GVD was rarely found in control cases below the age of 60 years. In elderly normal brains, the statistically most representative ranking order of predilection for GVD (in decreasing severity) was: in the 60 s, CA1〉prosubiculum 〉CA2 (no GVD was found in the CA3 and CA4); in the 70 s, CA1〉prosubiculum 〉CA2 〉CA3〉CA4; in the 80 s, CA1〉prosubiculum 〉CA2〉CA3〉CA4; in the 90s, CA1〉prosubiculum 〉CA2〉CA3〉CA4. In the brains of demented patients, the rank order for GVD was: for AD, CA1 〉CA2〉CA3〉 prosubiculum 〉CA4; for MID, CA1 〉 prosubiculum 〉CA2〉CA3〉CA4; for PD, CA1 〉CA2〉CA3〉 prosubiculum 〉CA4; and for atypical dementia (NANPDF), CA1〉CA2〉 prosubiculum 〉CA3〉CA4. The similarity of the predilection to ranking order was noted both in normal aged subjects and in MID as well as both in AD and in PD. The qualitative investigation disclosed that the affected neurons with GVD in the cases of AD were found in all the examined areas outside the hippocampus (gyrus praecentralis, temporal and occipital cortex, globus pallidus, amygdaloid nuclei, mammillary bodies, medial thalamic nuclei, red nuclei, nuclei basalis of Meynert, dentate nuclei and inferior olivary nuclei) and, contrary to the results in AD, there were no affected neurons with GVD in the cases of MID. The occurrence and distribution of GVD in demented patients were different in these respective disorders.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 105-110 (Jan. 1992), p. 1833-1836 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Acta neurochirurgica 113 (1991), S. 42-47 
    ISSN: 0942-0940
    Keywords: Primary intracranial arachnoid cyst ; elderly ; clinical analysis ; management ; outcome
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Thirty-nine cases of primary intracranial arachnoid cyst in the elderly, including one case of our own, were analyzed. Clinical characteristics in these patients were as follows. (1) The number of patients decreased with age, but there were no differences according to sex. (2) Clinical manifestations were similar to those of chronic subdural haematoma or normal pressure hydrocephalus including dementia, urinary incontinence, and hemiparesis. General symptoms such as headache and seizures were also present. (3) Surgery was performed in most patients with generally good outcome regardless of operative procedures (capsular resection vs. shunt). (4) In some cases of advanced age, disease manifestation may have been due to slight head injuries. Our own case is described as an example.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 175-178 (Nov. 1994), p. 205-208 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 175-178 (Nov. 1994), p. 181-184 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1600-0560
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A primary adenoid cystic carcinoma of the skin is reported. Light microscopy revealed pseudocysts. PAS-positive basement membrane and true glandular lumen, which in aggregates are specific for adenoid cystic carcinoma. Perineural invasion was also observed. Ultrastructural examinations revealed three types of cystic spaces; pseudocysts, true glandular lumens and intercellular spaces. Enzyme histochemical examinations showed positive reactions for eccrine enzymes, including phosphorylase and succinic dehydrogenase and negative for apocrine enzymes. Immunolocalization of collagens and laminin revealed that basement membranes of the pseudocysts involve Type V collagen as well as Type IV collagen and laminin.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4756-4761 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium-tin-oxide (ITO)/silicon oxide/mat-textured n-Si junction solar cells having an energy conversion efficiency of 15% are fabricated by the spray pyrolysis method. Their characteristics and the junction properties are compared with the same junction solar cells having a flat Si surface. In cases where the ITO film is deposited on a hydrofluoric acid-etched mat-textured Si surface, the open circuit photovoltage (Voc) is low (405 mV). Scanning electron microscopy observation shows that high-density dislocations are formed near the Si surface, and the temperature dependence of the current-voltage characteristics suggests that the trap-assisted multistep tunneling through the Si depletion layer is a dominant current flow mechanism. In cases where the ITO film is deposited on a thermal silicon oxide-covered mat-textured Si surface, the formation of the dislocations is suppressed, and consequently Voc is increased to 485 mV. For this solar cell, a surface recombination current takes the dominant part of the dark current in the bias region below ∼250 mV, and a thermionic-assisted tunneling current is dominant in the higher bias region. For a cell where the thermal silicon oxide-covered mat-textured Si surface is annealed at 800 °C under nitrogen before the deposition of the ITO film, Voc is further increased to 540 mV, and the energy conversion efficiency of 15% is achieved. In this case, the thermionic-assisted tunneling current density is decreased by an increase in the barrier height due probably to a reduction in the density of the positive charge in the silicon oxide layer. The surface recombination current density is also reduced by the removal of interface states, leading to the improvement of the fill factor.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4344-4350 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium tin oxide (ITO) films deposited on single-crystal Si wafers by the electron-beam-(EB) evaporation method have been investigated by x-ray photoelectron spectroscopy (XPS) together with work-function and resistivity measurements. The XPS studies suggest that all the ITO films consist of crystalline and amorphous phases. The amount of the crystalline phase with respect to the amorphous phase for the ITO films, deposited with the incident angle of the ITO vapor to the Si substrate θi at 0°, is smaller than that for the ITO films deposited at θi=45°. The amount of the crystalline phase hardly depends on the conditions of postdeposition heat treatments, while that of the amorphous phase increases by raising the temperature of the heat treatments. Metal indium present in the films deposited at θi=0° is transformed into amorphous indium oxide by heating at 450 °C in air. Metal tin is also present near the ITO/Si interface for the ITO films deposited at θi=0°. The work function of the ITO films deposited at θi=0° is lower by 0.8 eV in maximum than that for the films deposited at θi=45°. It is concluded that the work function of the ITO films increases not only with a decrease in the amount of metal indium and metal tin in the films but also with an increase in the amount of the crystalline ITO phase with respect to that of the amorphous phase.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4869-4871 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pseudogap in a metal-in-gap head causes ripples in output spectra. This gap is a layer with poor magnetic properties at the boundary between sendust film and a ferrite core. The ripple amplitude reduces as the bonding temperature decreases. It also depends on the ferrite-core crystal orientation. We examined the diffusion at the boundary by Auger-electron spectroscopy and investigated the crystal structure of sendust films by x-ray diffraction. It is proved that diffusion causes the contour effect. The thickness of the diffusion layer at the boundary depends on bonding temperature. It is also found that the diffusion at the boundary and the crystal structures of the sendust film are independent of the crystal orientation of the ferrite cores. Computer-simulation results indicate that the contour effect is a function of the ferrite-core permeability. The permeability varies in accordance with the crystal orientation. The above explains that the contour effect depends on the ferrite-core crystal orientation.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium tin oxide (ITO)/silicon oxide/silicon (Si) junction solar cells were produced by depositing ITO on a thin silicon oxide-covered single-crystal Si substrate using the electron-beam evaporation method. The current-voltage (I-V) characteristics strongly depended on the incident angle (θi) of the evaporated ITO vapor to the Si substrate during the ITO deposition, as well as the post-deposition heating temperature (Th) and the kind of the ambient gases during post-deposition heat treatment. The ITO films deposited at θi=0° and treated at Th=380 °C in air formed a high-energy barrier with p-Si, and formed ohmic contact with n-Si. X-ray diffraction analysis showed that the ITO films deposited at θi=0° contained metal indium. The amount of the metal indium decreased either by reducing the deposition rate of the ITO film or by raising the substrate temperature during the ITO deposition. The ITO films deposited at θi=45° and treated at Th=350∼450 °C in hydrogen, on the other hand, formed a high-energy barrier with n Si. In this case, no metal indium was observed in the ITO films. It is concluded that the formation of the metal indium in the ITO films changes their work functions, and thus its presence strongly affects the I-V characteristics of the ITO/silicon oxide/Si solar cells. Darkening observed for the ITO films deposited at θi=0° is also attributed to the presence of the metal indium.
    Type of Medium: Electronic Resource
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