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  • 1
    Electronic Resource
    Electronic Resource
    TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon (1992)
    Springer
    Applied physics 54 (1992), S. 124-131 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323898
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  • 2
    Electronic Resource
    Electronic Resource
    TEM characterization of yttrium silicide layers synthesized by ion implantation (1992)
    Springer
    Applied physics 54 (1992), S. 527-532 
    Details
    ISSN: 1432-0630
    Keywords: 61.10 ; 61.70 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The structure of Si implanted with high doses of yttrium has been investigated by varying implantation doses and energies. As implantation doses increase into the low 1017 cm−2 range, silicide precipitates form. The precipitates are thin and long and lie parallel to {111} planes in the Si matrix. As dopant concentrations increase, the precipitates themselves become more equiaxed, aspect ratios decrease, and precipitates densities increase until the precipitates coalesce to form a continuous buried layer of yttrium silicide within the Si matrix. The layer thickness is relatively uneven. As implant doses increase to ∼ 4×1017 cm−2, the layer thicknesses become more uniform although there are still defects present. As the implant doses increase further, the precipitate bands on either side of the continuous layer decrease due to gettering of yttrium to the layer. As the energy of the implant is increased, the appearance of the sample is similar to that of the lower energy implants except that the layer is buried deeper in the Si matrix. Observations of the silicide are consistent with its having the AlB2 structure with ordered vacancies on the Si sublattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324334
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  • 3
    Electronic Resource
    Electronic Resource
    Vapor-deposited superconducting YBa2Cu3O7−δ lines: Effect of thickness and width on morphology (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1374-1376 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lines of different widths and thicknesses of YBa2Cu3O7−δ were prepared on SrTiO3 and compared for signs of morphological dependence on line dimensions. The lines were prepared on (100) SrTiO3 by electron beam (e-beam) coevaporation, e-beam resist lift-off, and annealing in oxygen to 850 °C. Linewidths ranged from 5 to 0.8 μm, and two film thicknesses, 200 nm ("thin'') and 500 nm ("thick''), were prepared. Eddy current measurements showed all samples to be superconducting with transition onset near 95 K. The morphology was found to depend not only on film thickness but also, for finest (≤1 μm) lines, on linewidth. "Thin'' lines of all widths showed nearly no a-type structure, while thick-film lines showed predominantly a-type structure on the surface except for the narrowest lines. Narrowest "thick'' lines, like "thin'' lines, contained mostly c-type structure. The results for thick fine lines suggest that reduced area growth may offer a practical advantage in achieving c-type morphology in patterned YBa2Cu3O7−δ for applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103205
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  • 4
    Electronic Resource
    Electronic Resource
    Observation and prediction of first phase formation in binary Cu-metal thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2810-2816 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First phase formation has been determined in Cu binary thin film systems with Ti, Zr, Mg, Sb, Pd, and Pt using transmission electron microscopy and Rutherford backscattering spectrometry. CuTi, CuZr, CuMg2, Cu2Sb, Cu3Pd, and Cu3Pt are the first phases to form upon annealing the Cu/metal bilayers. The effective heat of formation model is used to predict first phase formation in 14 Cu/metal systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351533
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  • 5
    Electronic Resource
    Electronic Resource
    Precipitation and relaxation in strained Si1−yCy/Si heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3656-3668 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the thermal stability of Si1−yCy/Si (y=0.007 and 0.014) heterostructures formed by solid phase epitaxial regrowth of C implanted layers. The loss of substitutional C was monitored over a temperature range of 810–925 °C using Fourier transform infrared absorbance spectroscopy. Concurrent strain measurements were performed using rocking curve x-ray diffraction to correlate strain relaxation with the loss of substitutional C from the lattice. Loss of C from the lattice was initiated immediately without an incubation period, indicative of a low barrier to C clustering. The activation energy as calculated from a time to 50% completion analysis (3.3±5 eV) is near the activation energy for the diffusion of C in Si. Over the entire temperature range studied, annealing to complete loss of substitutional C resulted in the precipitation of C into β-SiC. The precipitates are nearly spherical with diameters of 2–4 nm. These precipitates have the same crystallographic orientation as the Si matrix but the interfaces between the Si and β-SiC precipitates are incoherent. During the initial stages of precipitation, however, C-rich clusters form which maintain coherency with the Si matrix so the biaxial strain in the heterostructure is partially retained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357429
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  • 6
    Electronic Resource
    Electronic Resource
    Low-dose implantation of Sb in Si1−xGex epitaxial layers: Correlation between electrical properties and radiation damage (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 377-381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pure Si(100) and Si1−xGex (x〈0.20) layers, epitaxially grown on Si(100) substrates, were implanted at room temperature with Sb+ ions at an energy of 100 keV and a dose of 1013 cm−2, which was found to be below the critical value for amorphization. Spreading resistance profiling and Hall-effect measurements show that a p-type region was formed in the Si1−xGex alloy layers upon annealing at 500 °C, in spite of the fact that the implanted ion (Sb) is a donor. Only higher-temperature anneals transformed the implanted layer into the expected n-type doping. A p-type region was also formed following Xe implantation, indicating that these results can be attributed to the radiation damage without dependence on the electronic structure of the ion. This phenomenon does not exist at all in pure Si. Rutherford backscattering (channeling) measurements show that the amount of defects formed in the Si1−xGex alloy layer during the implantation process increased with the Ge content, in good agreement with Monte Carlo simulations. These results can explain the observation that the level of the p-type doping increased with the Ge content in the alloys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356991
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  • 7
    Electronic Resource
    Electronic Resource
    Solid-phase epitaxial regrowth of Sb-implanted Si1−xGex strained layers: Kinetics and electrical properties (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3936-3943 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Kinetics and electrical properties of solid-phase epitaxial regrown (SPEG) layers of Sb-implanted strained Si1−xGex alloys are reported. Two sets of Si1−xGex epilayers with compositions of x=0.08 and 0.18, molecular beam epitaxy grown on Si(100) substrates, were implanted at room temperature with Sb+ ions at an energy of 200 and 100 keV, respectively, and doses of 1014 and 1015 ions/cm2. A set of Si(100) samples was also implanted as a reference. The samples were annealed at temperatures of 525, 550, and 575 °C for durations between 5 s and 10 min. For the higher-dose Sb-implanted Si0.92Ge0.08 layer (1015 cm−2) ion backscattering measurements in the channeling mode show a decrease in the regrowth rate compared to Sb-implanted Si(100). The activation energy of the SPEG process for the Si0.92Ge0.08 alloy was 2.9±0.2 eV, higher than the value of 2.4±0.2 eV obtained for pure Si. For the alloy with 18% Ge the SPEG rate for the 1015 cm−2 dose was much smaller compared to the sample with 8% Ge. For the lower-dose implantation (1014 cm−2) the regrowth rates for Si0.92Ge0.08 and pure Si were very close, and the activation energies were 2.8±0.2 and 2.7±0.2, respectively. It was also found that the SPEG rate in a rapid thermal annealing was significantly higher than that for a sample heated in a conventional furnace.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356013
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  • 8
    Electronic Resource
    Electronic Resource
    Reaction kinetics in the Ti/SiO2 system and Ti thickness dependence on reaction rate (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 257-263 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction kinetics of Ti films on SiO2 were investigated using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, and transmission electron microscopy. Consistent with earlier studies, the reaction results in the formation of a TiOw/Ti5Si3/SiO2 stack at temperatures in the range 700–820 °C. As the silicide layer grows, the concentration of O in TiOw increases, with the reaction ceasing at w∼1.2. In addition, the reaction rate depends on the initial Ti thickness, as thicker Ti films possess faster reaction rates. Applying current diffusion-controlled kinetic growth models, we find nominal agreement with our data at each thickness and predict activation energies in the range 3.0–3.4 eV. However, such a model is unable to account for either the Ti thickness dependence or the slowing and eventual cessation of silicide formation as the oxide composition approaches its limiting value. We implement a model which takes into account the reduction in the thermodynamic driving force for Ti5Si3 formation due to the incorporation of oxygen into the overlying Ti. This model predicts a silicide growth relationship of the form kt= (1/2)x2+ax2f∑∞n=3(1/n)(x/xf)n, with k independent of Ti thickness and given by k=k0 exp(−ΔE/kBT). The final Ti5Si3 thickness, xf, is determined by the initial Ti thickness, the stoichiometries of each phase formed and the final oxide composition. This model yields a more accurate fit to our data than if we assume parabolic growth since it predicts the eventual cessation of the reaction as x approaches xf. We find ΔE=2.9±0.1 eV. Our model also seems to explain the dependence on initial Ti thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357137
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  • 9
    Electronic Resource
    Electronic Resource
    Interdiffusion and reaction in Cu/PtSi/Si(100) systems (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3959-3963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion and reaction in Cu/PtSi/Si(100) structures have been investigated. During annealing Cu migrates across the intermediate PtSi layer and reacts with Si to form Cu silicides, with no indication of PtSi decomposition or a Cu-PtSi reaction. The diffusion of Cu through PtSi proceeds nonuniformly when PtSi is exposed to air before Cu deposition. Uniform transport is observed when the sample is prepared in situ without breaking vacuum. Cu silicides grow linearly with time, while the rates are independent of the thickness of the transport medium. The results indicate that Cu silicide formation is not controlled by Cu diffusion through the interposed PtSi layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356016
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  • 10
    Electronic Resource
    Electronic Resource
    Oxidation and reduction of copper oxide thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1020-1029 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have employed 16O(α,α)16O oxygen resonance measurement and transmission electron microscopy to study the oxidation and reduction of copper oxide thin films. The in- and out-diffusion of oxygen-induced oxygen concentration variations and microstructural changes in the films were monitored. The study of reduction was carried out by annealing CuO and Cu4O3 thin films in vacuum. Dark-field microscopic images show that isolated and large Cu2O grains emerge from the small CuO and Cu4O3 grain matrices. The growth of Cu2O grains in both CuO and Cu4O3 matrices has been measured to be linear with time, and have activation energies 1.1 and 0.7 eV, respectively. The main controlling mechanism to the discontinuous morphology of the Cu2O grain growth is the migration of the phase boundaries between the oxides induced by oxygen out-diffusion along the moving boundary. An oxygen in-diffusion study was performed by annealing Cu2O and Cu4O3 in an oxygen ambient. The CuO phase nucleates randomly and rapidly in both Cu2O and Cu4O3 matrices. The small grain growth rate of CuO suggests that nucleation rather than grain growth is the predominant event during oxidation. The kinetics study of the reduction and oxidation of copper oxides shows that the two processes are asymmetrical and the latter is faster.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347417
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