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  • 1995-1999  (40)
  • 1990-1994  (28)
  • 1985-1989  (20)
  • 1
    Electronic Resource
    Electronic Resource
    Mechanism of carrier transport through a silicon-oxide layer for 〈indium-tin-oxide/silicon-oxide/silicon〉 solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3931-3939 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of carrier transport through a thin silicon-oxide layer for 〈spray-deposited indium-tin-oxide (ITO)/silicon-oxide/Si〉 solar cells has been studied by measurements of the dark current density as a function of the thickness of the silicon-oxide layer, together with the observation of transmission electron micrographs. Cross-sectional transmission electron micrography shows that a uniform silicon-oxide layer with the thickness of ∼2 nm is present between ITO and Si when the ITO film is deposited on a flat Si(100) surface at 450 °C. The dark current density under a depletion condition strongly depends on the thickness of the silicon-oxide layer. It is concluded from these results that quantum mechanical tunneling is the dominant mechanism for the charge carrier transport through the silicon-oxide layer. On the other hand, when the ITO film is deposited on a mat-textured Si surface at the same temperature, a nonuniform silicon-oxide layer is formed, with ITO penetrating into the silicon-oxide layer in the top and valley regions of the pyramidal structure. By raising the deposition temperature of the ITO film on the flat Si(100) surface to 500 °C, the silicon-oxide layer becomes also nonuniform. For these diodes with the nonuniform silicon-oxide layer, the carrier transfer probability is less dependent on the thickness of the silicon-oxide layer, leading to the conclusion that minute channels of ITO are present in the silicon-oxide layer and charge carriers transfer through the channels. The photovoltage is decreased by the presence of the minute channels, with its magnitude depending on the density of the channels. The conversion efficiency of the 〈ITO/silicon-oxide/n-Si(100)〉 solar cells is unchanged upon illumination for 1000 h. The good cell stability is attributed to the well-crystallized ITO film which effectively suppresses diffusion of oxygen from the air and to low reactivity of ITO with Si at room temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359912
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  • 2
    Electronic Resource
    Electronic Resource
    Zinc oxide/n-Si junction solar cells produced by spray-pyrolysis method (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1301-1307 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc oxide (ZnO)/n-Si junction solar cells were fabricated by a spray-pyrolysis method and high short-circuit photocurrent densities and relatively high photovoltages were obtained by adjusting the conditions of the deposition and the post-deposition heat treatment. Consequently, relatively high conversion efficiencies ranging between 6.9% and 8.5% were obtained. The efficiency of the solar cells with ZnO/n-Si structure decreases slowly with time when they are kept in air in the dark because of the increase in the thickness of the silicon oxide layer between Si and the ZnO film. This degradation can be avoided by forming an indium-tin-oxide (ITO) overlayer on the ZnO film, indicating that the silicon oxide layer grows through the reaction of Si with oxygen diffusing from the atmosphere, not with ZnO. The efficiency of the ZnO/n-Si junction solar cells decreases rapidly with the illumination time. Capacitance-voltage measurements show that this degradation is caused by a decrease in the work function of the ZnO film. The decrease in the work function is caused by desorption of O−2 from the grain boundaries of the ZnO films. When incident light contains no ultraviolet (UV) component, this degradation does not occur, indicating that the desorption is caused by the acceptance of holes generated by UV light. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358932
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  • 3
    Electronic Resource
    Electronic Resource
    Authors' reply (1989)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 96 (1989), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1989.tb03270.x
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  • 4
    Electronic Resource
    Electronic Resource
    Malignant lymphoma presenting as initial symptom in the uterus. Case report (1988)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 95 (1988), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1988.tb06799.x
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  • 5
    Electronic Resource
    Electronic Resource
    Size Dependent Fluorescence Quenching of CdS Nanocrystals Caused by TiO2 Colloids as a Potential-Variable Quencher (1995)
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 4283-4287 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00011a019
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  • 6
    Electronic Resource
    Electronic Resource
    Spontaneous alloying of copper atoms into gold clusters at reduced temperatures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1100-1103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The alloying behavior of copper atoms into gold clusters at temperatures lower than 300 K was examined using a 200 kV transmission electron microscope equipped with a double source evaporator in the specimen chamber. Isolated gold clusters of about 4 nm in mean diameter were prepared on a supporting film and were cooled down to 245, 215, 165, or 125 K. Copper atoms were then deposited onto the same film. Upon the deposition of copper, the gold clusters quickly changed into completely or partially alloyed clusters, depending upon the substrate temperature. The copper diffusivity estimated from such spontaneous alloying was many orders of magnitude faster than that in bulk gold. A possible mechanism behind the spontaneous alloying is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353272
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  • 7
    Electronic Resource
    Electronic Resource
    New hydride vapor phase epitaxy for GaP growth on Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1245-1247 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium phosphide films are successfully grown on (100) Si substrates by a new hydride vapor phase epitaxy. Mixing of reactant vapors just above the substrate makes the growth rate as high as 50 nm/min even in the temperature range of 350–450 °C. This makes the two-step growth procedure applicable for growing a single domain GaP film on Si from H2-HCl-PH3-Ga reactants. An etch pit density of 7.5×106 cm−2 and a full width at half-maximum of 93 arcsec in a double-crystal x-ray rocking curve are achieved. Green light-emitting diodes with 565 nm peak wavelength are successfully fabricated using nitrogen-doped GaP films grown on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98693
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  • 8
    Electronic Resource
    Electronic Resource
    Wavelength dependence of photorefractive effect in Ti-indiffused LiNbO3 waveguides (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 975-977 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel method of measuring the photorefractive sensitivity of Ti-diffused channel waveguides in lithium niobate is proposed and demonstrated. It is suited for quantifying the dependence of the photorefractive sensitivity on the irradiation beam wavelength. From measurements at various irradiation intensities and wavelengths 0.633, 0.81, and 1.06 μm, we give an estimate of the crosstalk of a directional coupler as a function of irradiation intensity and wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101421
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  • 9
    Electronic Resource
    Electronic Resource
    Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6725-6728 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aging tests were performed for InP-based laser diodes heteroepitaxially grown on Si substrates. To define the degradation mode, we studied the change in the device characteristics and electroluminescence (EL) images during the aging tests. The degradation proceeds in a mode characterized by a gradual increase in the threshold current without a change in the current–voltage characteristics. During the aging, dark spot defects (DSDs) appear in the EL images, where no defects were observed initially. However, after a certain number of DSDs are generated, no more degradation occurs in the current–light-output characteristics and EL images. The correlation of the saturation behavior between the threshold current and DSD number is quite good, and strongly suggests that the device degradation is dominated by the development of nonradiative defects in the active layer. Judging from the saturation density of DSDs, we can assume that the origin of the nonradiative defects is closely related to the dislocation that remains in the heteroepitaxial layers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368999
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  • 10
    Electronic Resource
    Electronic Resource
    Behavior of electromigration-induced gaps in a layered Al line observed by in situ sideview transmission electron microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1066-1068 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed the detailed behavior of electromigration-induced gaps (voids that cause an open circuit) in a submicron-wide Al line layered on a Ti/TiN conductor by in situ sideview transmission electron microscopy. Two types of gaps were observed. The first type is characterized by extensive growth, which may make the Ti/TiN shunt ineffective under use conditions. The gap causes a decrease in the Al drift velocity upstream in the electron flow. This decrease probably results from mass transport through the exposed TiN surface into the gap. The second type of gap did not grow and later healed; therefore, the shunt seems to be effective. The gap had little influence on the drift velocity. Mass was transported directly from the cathode-side Al segment through the gap to the anode-side segment. These mass transport processes may be the causes of resistance oscillation in layered lines. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115714
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