ISSN:
1432-0630
Keywords:
78.20
;
78.65
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The electrical and geometric properties of GaAs multilayer structures are measured nondestructively by infrared reflectance spectroscopy (50–5000 cm−1). Using oblique incidence and both s- and p-polarizations of the probing beam, carrier concentration and thickness of the epitactic films as well as the carrier concentration of the GaAs substrate are determined. The main structures in the spectra are due to phonon reststrahlen bands, Fabry-Perot interferences and the zeros of the dielectric function leading to dips in the reflectance (Berreman Mode). The results compare favorably with a depth-resolved secondary ion mass spectrometric (SIMS) sample analysis. The range of applicability of the method is discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00323946
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