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  • Chemistry  (3)
  • 79.20N  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    The sputtering of gallium arsenide at elevated temperatures (1979)
    Springer
    Applied physics 20 (1979), S. 207-211 
    Details
    ISSN: 1432-0630
    Keywords: 79.20N
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The energy distribution of atoms and molecules sputtered from a polycrystalline GaAs sample with a 6 keV Ar ion beam have been measured. The temperature of the target ranged from 30°C to 350°C. Total sputtering yield of the investigated sample has also been measured. The results clearly show that there is a large contribution of molecular component in the sputtered flux and that the molecular component increases above 250°C in comparison to the atomic components thus yielding an increase in the total sputtering yield, as observed previously by Brozdowska et al. The enhanced molecular component at temperatures above 250°C can be explained by the appearance of a spike effect. The results obtained at low temperature can be explained in terms of the collision cascade mode. There is no contribution of beam-induced thermal vaporization to the sputtering of GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886019
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Application of cross-sectional transmission electron microscopy in the characterization of ion beam processed materials surfaces (1987)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 10 (1987), S. 142-148 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Ion-beam-mixing-induced amorphization of Ni—Ti bilayered thin film and the amorphization of α-SiC through ion bombardment have been studied by employing cross-sectional transmission electron microscopy techniques. Rutherford backscattering analysis was employed to monitor the mixing of Ni—Ti bilayer as a function of dose (3 × 1015-2 × 1016 ions cm-2) of 1 MeV Au+ ions. It has been observed that amorphization starts at the interface as the mixing proceeds. Formation of a buried amorphous layer was obtained in α-SiC by ion bombardment with 2.5 MeV Ni+ at a dose of 1 × 1016 ions cm-2. Double energy implants (1 MeV Ni+, 1 × 1016 ions cm-2+2 MeV Ni+, 1 × 1016 ions cm-2) were employed to obtain 1.8 μm thick continuous amorphous layer on the surface of α-SiC. Also, in the present investigation, it has been shown that α-SiC pieces with amorphous surface layers joined better than those with as received crystalline surface layers.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740100214
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Ion beam mixing of Pt with René N4 alloy (1987)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 10 (1987), S. 131-134 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Ion mixing was studied in Pt-René N4 alloy system. The substrate, René N4, is a nickel-base superalloy with about 66% of ordered γ′ precipitates by volume. The average precipitate size is approximately 0.42 μm. Mixing was accomplished by 1 MeV Pt+ ions at two different doses and followed by Rutherford back scattering and Auger sputter profiling. Mixing was significantly slower in this system than it was in Pt/Ni binary alloy suggesting a possible strong influence of alloy chemistry, microstructure or intermediate impurity layer on the mixing process.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740100212
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Limitations of ion etching for interface analysis (1981)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 3 (1981), S. 118-125 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The limitations of using ion sputtering for interfacial analysis are reviewed. It is concluded that many artifacts may degrade interfacial resolution - surface roughness, zone of mixing, bulk and surface diffusion, implantation, residual gas adsorption and matrix effects. Techniques to minimize these limitations are suggested. Some examples are: use of reactive ion beams, multiple ion beams, sample rotation and special mounting, varying the ion energy and incidence angle, and deconvolution. It is concluded, however, that sputtering may destroy atomic arrangement and chemical state information at the interface, and new approaches are needed to determine these interfacial parameters.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740030305
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    Paper (German National Licenses)
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