Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 691-693
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Calculations are presented for the photoluminescence spectrum of InP/In0.53Ga0.47As superlattices doped with Si. When doping is confined to the inner barriers, the photoluminescence is dominated by transitions between Tamm states in the electron and valence bands, which contribute with an optical band at energies higher than the In0.53Ga0.47As band gap. These results are in good agreement with experimental observations. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1346627
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