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  • 1
    Electronic Resource
    Electronic Resource
    Die Übertragung eines stäbchenförmigen Hopfenvirus durch Aphis fabae Scop (1966)
    Springer
    Naturwissenschaften 53 (1966), S. 537-537 
    Details
    ISSN: 1432-1904
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00600667
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetostriction of REBa2Cu3O7-δ (1988)
    Springer
    The European physical journal 71 (1988), S. 429-436 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The magnetostriction (MS) of REBa2Cu3O7−δ (RE=Y, Nd, Eu, Gd, Ho, Er, Yb) is reported as a function of magnetic field and temperature forH〈5 T and 1.5〈T〈40 K. With nonmagnetic rare earths the MS is small and a linear function of the field atH〉1 T. The MS is much larger when the rare earth carries a magnetic moment, as usual, but the volume MS observed with moment carrying REBa2Cu3O7−δ is larger than that of nonsuperconducting intermetalics. This effect is explained by the shielding currents which are induced by the 4f magnetic moments in the superconducting CuO-lattice. The thermal expansion of GdBa2Cu3O7−δ shows a large peak at the ordering temperature of 2.2 K in both the superconducting and the nonsuperconducting samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01313928
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  • 3
    Electronic Resource
    Electronic Resource
    Zinc diffusion in InP using diethylzinc and phosphine (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3234-3237 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low pressure open tube system with diethylzinc (DEZn) and phosphine (PH3) as precursors was used to study the Zn-diffusion in InP. This system offers a flexible and precise control of the diffusion parameters. We investigated the effect of the DEZn and PH3 partial pressures and of the diffusion temperature and time on the hole and Zn concentration profiles. Annealing the samples leads to an increased hole concentration due to out-diffusion of interstitial Zn donors. The Zn and hole concentration profiles were obtained by secondary-ion mass spectroscopy and C–V etch profiling showing maximum hole concentrations between 1017 cm−3 and 4×1018 cm−3 for diffusion depths from 0.3 to 2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350969
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  • 4
    Electronic Resource
    Electronic Resource
    Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6466-6475 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hafnium oxides and hafnium silicate films were investigated as a possible replacement for the SiO2 gate dielectric. Hafnium oxide films were formed by reactive sputtering from a single Hf oxide target in a predominantly Ar atmosphere containing small additions of oxygen. Hafnium silicates were made by adding a He-diluted silane gas for Si incorporation. By changing the silane gas flow, different Si atomic concentrations were incorporated into the Hf oxide films. Depositions were performed with the substrate held at temperatures of 22 °C and 500 °C. The chemical composition of the films was determined with nuclear techniques. Optical reflectivity was used to measure the optical band gap. The film morphology was investigated by transmission electron microscopy (TEM) and the electrical properties were measured with capacitance–voltage and current–voltage measurements using aluminum gate capacitors. TEM and electrical measurement showed that a SiO2 interfacial layer of about 3 nm formed at the Si interface due to the oxidizing sputter ambient. This precluded the growth of Hf based high-K films with small equivalent thickness. After correction for the interfacial oxide layer, the dielectric constant was found to decrease from about 21 for Hf oxide to about 4–5 for the Hafnium silicates with low Hf content (3 at. % Hf and 32 at. % Si). The optical band gap was found to increase from 5.8 eV for Hf oxide to about 7 eV for the silicate films. After annealing at 1000 °C followed by a 300 °C postmetallization anneal, negligible flat band voltage shift were measured on hafnium silicate films and good interface passivation was observed. However, leakage currents increased due to the high temperature processing. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1417991
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  • 5
    Electronic Resource
    Electronic Resource
    Coherent magnetization reversal of nanoparticles with crystal and shape anisotropy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 507-513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss coherent magnetization reversal in single-domain particles with cubic or uniaxial crystal anisotropy and present the derivation and simulation of the nucleation field in the important case of particles with shape anisotropy and a random orientation of a cubic crystal anisotropy axis. We analyze the interplay of shape and crystal anisotropy as a function of crystal orientation with respect to the applied field. In addition, we present simulations for particles with uniaxial crystal anisotropy and derive the values for remanence and coercive field of an ensemble of particles from calculated hysteresis loops in each case. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323519
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  • 6
    Electronic Resource
    Electronic Resource
    Self-diffusion studies of 15N in amorphous Si3BC4.3N2 ceramics with ion implantation and secondary ion mass spectrometry (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1827-1830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen self-diffusion studies in amorphous precursor-derived Si3BC4.3N2 ceramics were carried out, using ion implanted stable 15N isotopes as tracers and secondary ion mass spectrometry for depth profiling. The analysis of the diffusion profiles in the range of 1500–1700 °C did not show the typical Gaussian broadening of the implantation profiles. Instead, we observed the occurrence of a high concentration region where the width of the implantation profile is nearly unchanged due to implantation damage, and a low concentration region where diffusion occurs. The experimentally determined diffusivities obey an Arrhenius behavior with an activation enthalpy of about H=7 eV and a pre-exponential factor D0 in the order of 5 m2/s which indicates a diffusion mechanism via vacancy-like defects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305903
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  • 7
    Electronic Resource
    Electronic Resource
    Design and performance of the high-flux/high-brightness x-ray wiggler beamline BW2 at HASYLAB : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1668-1670 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The wiggler beamline BW2 at HASYLAB provides an intense monochromatic photon beam in the x-ray range from 2.02 to 33.5 keV for a diversity of experimental x-ray techniques such as surface diffraction, photoemission, absorption, microtomography, standing waves, etc. The beamline layout and its overall performance are described. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145877
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  • 8
    Electronic Resource
    Electronic Resource
    Hydrothermal Synthesis of Nanosize alpha-Al2O3 from Seeded Aluminum Hydroxide (1998)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: alpha-Alumina and boehmite particles were synthesized by coprecipitation followed by a hydrothermal treatment. X-ray diffraction (XRD) indicated that alpha-Al2O3 was the major phase and coexisted with 4% of boehmite in the presence of the alpha-Al2O3 seeds. On the other hand, a single boehmite phase was obtained in the absence of the alpha-Al2O3 seed particles. The powder densified in the temperature range from 1050° to 1350°C. High-resolution transmission electron microscopy (HRTEM) showed that the particle size of the synthesized alpha-Al2O3 was 60 nm. The surface area was 245 m2/g.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1998.tb02687.x
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  • 9
    Electronic Resource
    Electronic Resource
    Atopic dermatitis and congenital deafness (1978)
    Oxford, UK : Blackwell Publishing Ltd
    British journal of dermatology 99 (1978), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In a family with perceptive, non-progressive hearing loss several of the members suffered from atopic dermatitis. The proband had a severe atopic dermatitis and an extremely high IgE value. Some of the family members suffered from atopic dermatitis, others from deafness, and some from both diseases. The co-existence of these two disorders has been previously described in two families. Atopic dermatitis and perceptive, non-progressive congenital deafness might be genetically associated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2133.1978.tb02004.x
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  • 10
    Electronic Resource
    Electronic Resource
    Identification of the main oligomeric proanthocyanidin occurring in apples (1969)
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 17 (1969), S. 344-346 
    Details
    ISSN: 1520-5118
    Source: ACS Legacy Archives
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jf60162a023
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