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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Histochemistry and cell biology 84 (1986), S. 600-608 
    ISSN: 1432-119X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary A cytochemical study of gastric K+-stimulated p-nitrophenylphosphatase (K-NPPase) activity, corresponding to a K+-stimulated phosphoprotein phosphatase of H-K-ATPase system, has been made by a new cytochemical method. Sections of fixed guinea pig gastric mucosa in a mixture of 2% paraformaldehyde and 0.25% glutaraldehyde, were incubated with the incubation medium (1.0 M glycine-0.1 M KOH buffer, pH 9.0, 2.5 ml; 1.1 M KCl, 0.5 ml; 10 mM lead citrate dissolved in 50 mM KOH, 4 ml; levamisole, 6.0 mg; dimethyl sulfoxide, 2.0 ml; 0.1 M p-nitrophenylphosphate (Mg-salt), 1.0 ml; ouabain, 73.0 mg) for 30 min at room temperature. Under a light microscope the specific gastric K-NPPase reaction was distributed only in the parietal cells of the fundic glands. The electron microscopic cytochemistry showed that the gastric K-NPPase activity was localized on the membrane lining the apical surfaces, secretory canaliculi and tubulovesicles. On the other hand, ouabain-sensitive K-NPPase activity (Na-K-ATPase) was demonstrated to localize only in the basolateral membrane of parietal cells with Mayahara's method. These findings support the interrelationships between the apical surface membrane, secretory canalicular membrane and tubulovesicles, and the functional differentiation of the membrane between the secretory membrane and basolateral membrane.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 447-462 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth process, crystal structure, and optical properties of ultrathin GaAs and InAs wires (whiskers) as thin as 15–40 nm and about 2 μm long are reviewed and discussed. Experimental results for growing whiskers using Au as a growth catalyst during metalorganic vapor phase epitaxy (MOVPE) and the shape and growth direction of whiskers provide new insight into growth control of GaAs and InAs whiskers. The crystal structure of whiskers, Au behavior during MOVPE, and their growth mechanism are reviewed and discussed on the basis of transmission electron microscopic analysis. The photoluminescence spectra of GaAs wires are compared with those of a GaAs epitaxial layer, and the effect of surface treatment on the luminescence peak energy shift is discussed. The time dependent photoluminescence of GaAs wires is also discussed. The application of GaAs whiskers to light emitting devices is reviewed because a semiconductor wire structure employing quantum size effects is a very important element of electronic and optical devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1077-1079 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first experimental observation of excitonic polaritons in a GaAs/AlGaAs quantum well with incident light propagating parallel to the quantum well layer. We have built a time-of-flight measurement system which allows us to investigate low-temperature optical properties of semiconductor waveguides with picosecond time resolution. This system has been used to measure propagation delay time of an incident light pulse transmitted through the quantum well. The delay time increases drastically near the photon energies resonant to the optical absorption lines of the quantum well excitons. This behavior shows that the group velocity of the light pulse decreases as a result of the formation of quantum well excitonic polaritons. The group velocity drops to 7×104 m/s at a heavy-hole exciton absorption line at 6.0 K.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4920-4922 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal layers of ZnSe have been grown on GaP and GaAs substrates in a hydrogen transport system. By the use of the H2 bypass flow, the growth rate versus substrate temperature characteristics are found to be modified. The growth on GaP (111)B substrates is limited by thermodynamic mass transport and that on GaP (100) substrates by the kinetics of the surface chemical reaction. ZnSe layers grown on the GaAs (100) face have larger growth rates and smoother surface morphologies than those on GaP (100). This result may originate from the lattice parameter mismatch between the epitaxial layers and the substrates.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1228-1230 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An in-plane gate field-effect transistor is characterized by ultrafast electro-optic sampling. The transistor is monolithically integrated with photoconductive switches in coplanar waveguide and 〈0.5 ps measurement time resolution is achieved. The gate-drain capacitance of the transistor is obtained as 1.8 fF at zero drain voltage from displacement current transients. The gate-drain capacitance is dominated by parasitic capacitance and the intrinsic gate-drain capacitance is estimated as less than 0.2 fF. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 854-856 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We fabricated screen-printed Ag-(Bi,Pb)2Sr2Ca2Cu3Ox monofilament and multifilament tapes with filament number 1≤N≤5. As N increases, the critical current Ic increases monotonically until it reaches 54 A (77 K, 0 T) for N=5, while the critical current density Jc is around 1.6×104 A/cm2 (77 K, 0 T) nearly independent of N. The bend strain tolerance is found to decrease with increasing N. For monofilament tapes the strain tolerance is 2%–3% strain while for multifilament tapes it decreases to ∼1% at N=3 and ∼0.4% at N=5. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 5 (1989), S. 1326-1331 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 4 (1988), S. 903-906 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Clinical and experimental pharmacology and physiology 14 (1987), S. 0 
    ISSN: 1440-1681
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: 1. Plasma concentration and atrial content of atrial natriuretic factor (ANF) were measured in rats with chronic renal failure induced by subtotal nephrectomy.2. Plasma ANF was higher, and atrial ANF content lower in rats with renal failure when compared with sham-operated controls.3. Plasma renin activity (PRA) and ANF were elevated at 1 week following subtotal nephrectomy. After 1 month plasma ANF had risen further, but PRA was suppressed to below control values.4. Plasma ANF was also measured in six patients with chronic renal failure undergoing routine haemodialysis.5. Elevated plasma ANF levels in patients with renal failure were lowered by haemodialysis, although extraction of ANF across the dialysis membrane was negligible.6. Secretion of ANF is increased in chronic renal failure in man and the rat, possibly mediated by increased intravascular volume.
    Type of Medium: Electronic Resource
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