Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Undoped semi-insulating GaAs epitaxial layers and their characterization (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7957-7965 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wafer annealing was applied to undoped conductive GaAs epitaxial layers grown by the chloride chemical vapor deposition method in order to realize semi-insulating GaAs epitaxial layers. It was found that, by wafer annealing at temperatures higher than 950 °C, semi-insulating epitaxial layers with a resistivity higher than 107 Ω cm and a mobility higher than 5000 cm2/V s can be obtained. The material quality has been evaluated by Hall measurement, isothermal capacitance transient spectroscopy, deep level transient spectroscopy, scanning photoluminescence, AB etching, ion implantation, and activation efficiency measurement. It was concluded that the semi-insulating behavior of undoped GaAs epitaxial layers is due to the increase of the EL2 concentration to the level of 5×1015 cm−3 realized by wafer annealing. The present material does not show any cell structures which are inherent to bulk GaAs materials. It was found to be of the best quality ever reported from the viewpoint of various material characterizations. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357907
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Characterization of high-purity InP by photoluminescence (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7165-7168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP polycrystals grown by the HB technique and InP single crystals grown by the liquid-encapsulated Czochralski technique have been evaluated by photoluminescence. It was found that as the carrier concentration is decreased, the photoluminescence spectrum shows finer structures. When the carrier concentration is less than 9×1014 cm−3, a strong free-exciton peak could be observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344547
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Diffusion properties of Al in ZnTe substrates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1989-1990 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to fabricate intrinsic pn junctions in p-type ZnTe substrates for realizing pure-green light-emitting diodes, Al was used as the diffusion species. We found that the Al diffusion region is observed as a dark region image by scanning electron microscopy. Al was diffused over a wide range of annealing temperatures and times. It was found that the activation energies of Al diffusion into p-type ZnTe substrates were 1.9±0.1 eV and the diffusion coefficient was given by D=20 exp(−1.9/kT) cm2/s. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287235
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Schottky diodes on n-type InP with CdOx interfacial layers grown by the adsorption and oxidation method (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5004-5006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel method to fabricate stable Schottky diodes on n-type InP was reported. The method is based on the chemical adsorption of metals and their successive oxidation for growing very thin metal oxide layers on top of n-type InP substrates. Schottky diodes were formed by using Au electrodes and the current-voltage characteristics were evaluated. It was found that nearly ideal Schottky diodes with barrier heights as high as 0.73 V, ideality factor of 1.16, and the reverse current of 5.5×10−7 A/cm2 at −1 V could be reproducibly obtained. CdOx interfacial layers were analyzed by Auger electron spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352027
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance study of thermal donors in Fe-doped InP (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7392-7396 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal annealing of semi-insulating InP wafers in the 660–820 °C temperature range under SiNx capping condition is studied by electron paramagnetic resonance (EPR) spectroscopy. The annealing leads to the formation of electrically active, deep thermal donors with total defect concentrations up to 1016 cm−3. The thermal donors are of intrinsic origin. By transient EPR spectroscopy the activation energies for electron emission of the dominant thermal donors were determined to be 0.40 and 0.14 eV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349735
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Thermal donor formation in Fe-doped semi-insulating InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2464-2465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single wafers of Fe-doped semi-insulating InP have been annealed under Si3N4 capping in the 663–760 °C temperature range. Electron paramagnetic resonance (EPR) measurements performed on single crystals from different parts of the wafers show that the thermal annealing introduces various deep donor centers in concentration up to 1016 cm−3. The donor formation rate increases strongly for annealing temperatures higher than 700 °C. From EPR transient spectroscopy the thermal ionization energy of the dominant donor has been determined to Ec−0.34 eV. The results are correlated with previous electrical resistivity and photoluminescence measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103852
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Semi-insulation of undoped GaAs epitaxial layers by wafer annealing (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1390-1392 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wafer annealing was first applied to undoped p-type GaAs epitaxial layers grown by the chloride chemical vapor deposition method in order to realize semi-insulating GaAs epitaxial layers. It was found that by wafer annealing at temperatures higher than 950 °C, the semi-insulating epitaxial layers with the resistivity higher than 107 Ω cm and the mobility higher than 5000 cm2/V s can be obtained. The EL2 concentration was measured using Si-doped epitaxial layers and it was concluded that the semi-insulation of undoped p-type GaAs epitaxial layers is due to the increase of the EL2 concentration to the level of 1015 cm−3 by wafer annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109686
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Aging-free InP substrates ready for molecular beam epitaxial growth of InAlAs/InGaAs heterostructures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1910-1912 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aging-free InP substrates ready for molecular beam epitaxy have been developed by the inert gas packaging technique. The surface degradation of the InP substrate after chemical cleaning was evaluated by the quality of the 2DEG heterostructure grown on the substrate. The InP substrate in a package filled with nitrogen gas was used for MBE growth. The Hall mobility of an InAlAs/InGaAs heterostructure directly grown on the InP substrate without any pretreatment or chemical etching is larger than 10 000 cm2 /V s at 300 K. There are no aging effects on the sample stored even after six months.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109540
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Characterization of deep level defects in thermally annealed Fe-doped semi-insulating InP by photoinduced current transient spectroscopy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2583-2585 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoinduced current transient spectroscopy has been used to show the effect of thermal annealing on deep level defects in semi-insulating Fe doped InP wafers. The annealing experiments have been accomplished in an infrared image furnace during 15 min at temperatures ranging from 663 to 820 °C. We show that this treatment leads to the formation of four deep traps named T1–T4 having the following activation energies: 0.14, 0.21, 0.41, and 0.53 eV, respectively. We show that the thermal anneal at high temperature leads to deterioration of the electrical properties of the material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108134
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Low residual impurities assessment by photoluminescence in multistep wafer-annealed semi-insulating Czochralski-grown GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1095-1097 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multistep wafer-annealed semi-insulating GaAs wafers (MWA) are characterized using photoluminescence (PL). The PL spectra present well-resolved near-band-edge transitions, including the doublet of the neutral acceptor-bound exciton. A detailed investigation using selective pair luminescence of samples submitted to different annealings, i.e., wafer- or ingot-annealing, single or multistep, shows that carbon is the main shallow acceptor. However, for the wafer-annealed samples, two other residual impurities found in the as-grown or ingot-annealed crystals have their estimated concentrations noticeably reduced, for Zn (e.g., around 1013 cm−3 in MWA), or are unresolved for Si. This reduction of background impurities may have direct consequences for device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107679
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...