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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial thin films and heterostructures of a copper-oxide-based isotropic metallic oxide (La8−xSrxCu8O20) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5449-5451 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of a copper-oxide-based isotropic metallic oxide (La8−xSrxCu8O20) and superconducting heterostructures (YBa2Cu3O7/La8−xSrxCu8O20/YBa2Cu3O7) have been fabricated by 90° off-axis sputtering. La8−xSrxCu8O20 is an oxygen-deficient pseudocubic perovskite that exhibits Pauli paramagnetism. X-ray diffraction and cross-sectional transmission electron microscopy reveal the heterostructures to have high crystalline quality and clean interfaces. This material will facilitate fabrication of ideal superconductor–normal-metal–superconductor Josephson junctions with low boundary resistance due to its excellent chemical compatibility and lattice match with cuprate superconductors and will be useful for determining the source of interface resistance in such heterostructures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359240
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic properties of epitaxial ferrite multilayer films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5923-5925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and studied the structure and magnetic properties of high quality single crystalline (Mn,Zn)Fe2O4, NiFe2O4, and CoFe2O4 films. Although (Mn,Zn)Fe2O4 and NiFe2O4 films grown directly on SrTiO3 and MgAl2O4 show mediocre structural and magnetic properties, these same films grown on SrTiO3 and MgAl2O4 buffered with CoCr2O4 or NiMn2O4 exhibit excellent crystallinity and bulk saturation magnetization values, thus indicating the importance of lattice match and structural similarity between the film and the underlying layer. X ray, Rutherford backscattering spectroscopy, atomic force microscopy, and transmission electron microscopy analysis provide a consistent picture of the structural properties of these ferrite films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361844
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  • 3
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of epitaxial spinel ferrite thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 714-716 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown epitaxial spinel ferrite thin films of (Mn,Zn) Fe2O4 and CoFe2O4 on (100) and (110) SrTiO3 and MgAl2O4 buffered by spinel structure buffer layers. High quality spinel ferrite films were grown at 400 °C on buffer layers that were grown at 600 °C and postannealed at 1000 °C. Although (Mn,Zn) Fe2O4 grown directly on SrTiO3 and MgAl2O4 shows mediocre structural and magnetic properties, ferrite films grown on (100) and (110) SrTiO3 and MgAl2O4 buffered with CoCr2O4 exhibit excellent crystallinity and bulk saturation magnetization values, thus indicating the importance of lattice match and structural similarity between the film and the immediately underlying layer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116601
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  • 4
    Electronic Resource
    Electronic Resource
    Superlattice modulation and epitaxy of Tl2Ba2Ca2Cu3O10 thin films grown on MgO and SrTiO3 substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1579-1581 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare the superlattice modulation, microstructure, and epitaxy of Tl2Ba2Ca2Cu3O10 thin films grown on MgO [100] and SrTiO3 [100] substrates by dc diode sputtering. Films grown on MgO were found to be quite clean with the c axis perpendicular to the substrate. However, no in-plane orientational relationship to the substrate was found. Films grown on SrTiO3, on the other hand, showed very good epitaxy to the substrate despite the presence of second phases. Films grown on MgO also exhibited a longer coherence length of the superlattice modulation than those grown on SrTiO3 under identical conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101387
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  • 5
    Electronic Resource
    Electronic Resource
    In situ observations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1605-1607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe in situ electron microscrope observations of the motion of misfit dislocations in Ge0.3Si0.7/Si(100) heterostructures. A 350 A(ring) Ge0.3Si0.7/Si(100) structure is grown by molecular beam epitaxy at 550 °C. Although this is below the critical thickness for this composition and growth temperature, we observe misfit dislocation nucleation and propagation as a function of in situ annealing temperature in the electron microscope. This confirms the metastable nature of GeSi strained-layer growth. The misfit dislocation density increases continuously with temperature, passing through an accelerated transition at ∼850 °C. We also report preliminary measurements of misfit dislocation velocity, which establish the identical relationship between threading and misfit dislocations in this system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99055
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  • 6
    Electronic Resource
    Electronic Resource
    Role of strained layer superlattices in misfit dislocation reduction in growth of epitaxial Ge0.5Si0.5 alloys on Si(100) substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4723-4729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the role of strained layer superlattices in threading dislocation reduction in the growth of Ge0.5Si0.5 alloys on Si(100) substrates by molecular-beam epitaxy. Several superlattice structures are studied with zero, negative, and positive net strains with respect to a Ge0.5Si0.5 buffer layer. Control samples consisting of uniform strained layers are also grown for each superlattice structure. Transmission electron microscopy analysis of defect densities is found to be hampered by defect losses from thin foils, particularly in the plan view geometry. It is found that although strained interfaces are effective at deflecting threading dislocations into the interfacial plane, little surface threading dislocation density reduction is observed as a function of the presence of the superlattices for dislocation densities of the order 108 cm−2. This observation may be understood in terms of threading dislocation propagation at strained interfacial planes, and a simple predictive model is developed for defect interaction probabilities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343223
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  • 7
    Electronic Resource
    Electronic Resource
    Annealing behavior of Ga+ implanted GaAs/AlGaAs observed by transmission electron microscopy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 318-320 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural aspects and annealing behavior of induced damage by Ga+ ion implantation of a GaAs single quantum well as investigated by transmission electron microscopy are presented. After rapid thermal annealing, vacancy and interstitial perfect dislocation loops are found on 〈110〉 and 〈111〉 type planes. In contrast to previous results from superlattices of AlGaAs/GaAs, we find dislocation loops in the AlGaAs as well as in the GaAs layer. The cathodoluminescence intensity of the implanted quantum well recovers completely after annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339152
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  • 8
    Electronic Resource
    Electronic Resource
    Simple Nb metal bonding structure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2191-2193 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple metallic bonding structure, has been developed consisting of a pure metal Nb and an alloy containing Sn, which can be employed to bond a semiconducting laser device and/or a silicon integrated circuit die to a submount with Au–Sn solder. Differential scanning calorimetry, transmission electron microscopy, and scanning electron microscopy reveal that the Nb layer acts effectively both as an adhesion layer to SiO2 and diamond submounts and as a perfect diffusion barrier against Au–Sn solder. The metallization structure shows no indication of dewetting of the Au–Sn solder. The excellent bonding characters have been attributed to the unique metallurgical properties of Nb. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113943
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  • 9
    Electronic Resource
    Electronic Resource
    Precipitates in YBa2Cu3O7−δ thin films annealed at low oxygen partial pressure (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3201-3203 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the precipitates in YBa2Cu3O7−δ(YBCO) thin films grown by the BaF2 process in pO2=4 Torr and 700 °C. While stoichiometric films result in BaCuO2 surface precipitates, we have found Y2Cu2O5 precipitates embedded in the matrix of the same film. Off stoichiometric films with Ba/Y〈1.5 have a precipitate-free surface but with higher abundance of Y2Cu2O5 in the film matrix. The estimated densities of the two precipitates favor a stoichiometric YBCO film matrix. This behavior is not explainable in terms of phase equilibria and is attributed to kinetic effects. The electrical properties of the films degrade as the Ba/Y ratio deviates from 2.00.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109624
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  • 10
    Electronic Resource
    Electronic Resource
    Single domain high Tc La2−xSrxCuO4 films with tilted CuO2 planes (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1905-1907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two fold degeneracy inherent to epitaxial growth of high Tc films on (101) perovskite substrates has been removed successfully. This is demonstrated by single domain, (103) oriented La2−xSrxCuO4 films of 0.04≤x≤0.34 on vicinal (101) SrTiO3 substrates using 90° off-axis sputtering. (101) substrates that have the surface normal rotated about [010] by 0.5°–3.5° produced essentially single crystal films with the c-axis direction determined by the sense of the miscut. Misoriented antidomains (103)' have been eliminated effectively to a percentage less than 1 part in 104. The mechanism for symmetry breaking is understood on the basis of a surface step model in which the energetics promoting single domain growth is derived from nucleation and epitaxy on the (001) face found at surface steps of vicinal substrates. Furthermore, the incommensuration of the c axis interplanar spacings with the a, b, plane lattice parameters in the La2−xSrxCuO4 structure provides a natural selection of (103) domains over (103)' domains. The model predicts the application to other high Tc materials such as the Bi2Sr2CanCun+1Ox, and the Tl2Ba2CanCun+1Ox families.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107149
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