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  • 1
    Digitale Medien
    Digitale Medien
    Photoluminescence of anodized silicon carbide (1997)
    Springer
    Semiconductors 31 (1997), S. 202-203 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract The luminescence of single-crystalline 6H-SiC plates after electrochemical etching has been investigated. The photoluminescence spectrum was found to change strongly after etching; the decay times of separate bands were determined. Just as in the case of silicon, the change in the photoluminescence could be due to the formation of nanostructures.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187109
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  • 2
    Digitale Medien
    Digitale Medien
    Growth and optical properties of BiI3 and PbI2 microcrystals (1998)
    Springer
    Physics of the solid state 40 (1998), S. 1568-1573 
    Details
    ISSN: 1063-7834
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract A study has been made of low-temperature absorption and luminescence spectra of bismuth iodate microcrystals in various hosts (layered cadmium iodate, microporous glasses and polymers), as well as of the spectra of mesoscopic domains formed in bulk bismuth iodate by mechanical strains. The structure of the spectra and the quantum shifts of the exciton levels yielded information on the dimensions and size dispersion of the microcrystals and domains, as well as on the effect of microcrystal size on the Stokes losses. The quantum exciton-line shifts in microcrystalline lead-iodate films grown in pores of the glass host have been used to calculate the film thicknesses. A photoinduced change in the mechanism of radiative recombination was observed in PbI2 microcrystals. The spectrum of resonant Raman scattering in lead iodate microcrystals consists of broad bands corresponding to the branches of optical phonons undergoing strong angular dispersion.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1130599
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  • 3
    Digitale Medien
    Digitale Medien
    Effect of contact with air on the photoluminescence spectrum of porous silicon (2000)
    Springer
    Physics of the solid state 42 (2000), S. 1431-1434 
    Details
    ISSN: 1063-7834
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract A study has been made of the transformation of photoluminescence (PL) spectra of porous silicon (PS) induced by its ageing, including the early stages of contact with air. The sample was prepared under conditions that minimized this contact, and spectral measurements were carried out in a high vacuum or in liquid nitrogen. The PS PL spectra obtained under continuous measurement in high vacuum are always dominated by one emission band of PS nanoelements, which shifts toward shorter wavelengths with ageing by 150 nm. At 80 K, the band intensity is considerably higher than at 300 K, and this difference grows with ageing. Exposure of a sample to air for a few tens of seconds is long enough to strongly transform its time-resolved PL spectra, which is evidence of a change in the sample surface. The effect of immersion of PS samples in liquid nitrogen on PL spectra is associated not only with their cooling, but also with the field of adsorbed nitrogen molecules, whose influence becomes weaker with increasing thickness of the oxidized near-surface layer. The variation of the spectral properties and kinetics of the long-wavelength PS PL band with temperature, medium (liquid nitrogen or vacuum), and exposure time suggest that these factors affect carrier migration between silicon nanoelements.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1307047
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  • 4
    Digitale Medien
    Digitale Medien
    Optical spectra of microcrystals of the layered semiconductor PbI2 grown in glass matrices (1998)
    Springer
    Semiconductors 32 (1998), S. 136-139 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract The transmittance, luminescence, and Raman spectra in PbI2 microcrystals of 2H polytype, grown in the voids of alkali-borosilicate glasses (void dimensions 4–30 nm), are investigated. Depending on the conditions of growth, the exciton states of the microcrystalline systems were found to shift toward higher energies by 35–60 meV relative to the free exciton energy in bulk single crystals as a result of the quantum-well effect. The resonant Raman spectra of PbI2 microcrystals exhibit not only the conventional Raman component A 1g , but also components associated with the appearance of the E u and A 2u optical phonons and the two-phonon processes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187333
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  • 5
    Digitale Medien
    Digitale Medien
    Intracenter luminescence of Mn2+ in Cd1−x MnxTe and Cd1−x−y MnxMgyTe under intense optical pumping (2000)
    Springer
    Physics of the solid state 42 (2000), S. 836-840 
    Details
    ISSN: 1063-7834
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract A comparative analysis of the kinetic properties of intracenter 3d luminescence of Mn2+ ions in the dilute magnetic superconductors Cd1−x MnxTe and Cd1−x−y MnxMgyTe is carried out. The influence of relative concentrations of the cation components on the position of the intracenter luminescence peak indicates that the introduction of magnesium enhances crystal field fluctuations. As a result, the processes facilitating nonlinear quenching of luminescence are suppressed. The kinetics of 3d-luminescence quenching in Cd1−x MnxTe are accelerated considerably upon elevation of optical excitation level due to the evolution of cooperative processes in the system of excited manganese ions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1131298
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  • 6
    Digitale Medien
    Digitale Medien
    Effect of γ irradiation on the photoluminescence kinetics of porous silicon (1999)
    Springer
    Semiconductors 33 (1999), S. 1315-1317 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract The effect of γ irradiation on the photoluminescence decay dynamics in porous silicon is investigated. Growth of the photoluminescence intensity and decrease of the decay time in irradiated porous silicon are explained by a lowering of the barriers to recombination of spatially separated electrons and holes via tunneling. The γ irradiation of porous silicon leads to a greater dispersion of the decay time.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187915
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  • 7
    Digitale Medien
    Digitale Medien
    Rapid luminescence saturation of the Mn2+ 3d shell in the Cd1−x MnxTe dilute magnetic semiconductor with a high manganese concentration (1999)
    Springer
    Physics of the solid state 41 (1999), S. 41-44 
    Details
    ISSN: 1063-7834
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract The dependence of manganese-ion intracenter-luminescence intensity on optical excitation level has been studied in the Cd1−x MnxTe dilute magnetic semiconductor with 0.4〈x〈0.7. It is shown that the intracenter luminescence saturates due to effective nonlinear quenching already at low excitation levels. Mechanisms are proposed which can provide nonlinear quenching and offer a qualitative explanation for the temperature dependence of the luminescence saturation in samples with different manganese concentrations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1130726
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  • 8
    Digitale Medien
    Digitale Medien
    Effect of temperature and uniform compression on local-center luminescence in TlGaS2 layered crystals (2000)
    Springer
    Physics of the solid state 42 (2000), S. 22-23 
    Details
    ISSN: 1063-7834
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Changes in the local-center luminescence spectrum initiated by structural defects in the TlGaS2 crystal are studied in the temperature range from 2 to 77 K and under a hydrostatic pressure up to 35 kbar. The effect of hydrostatic compression can be explained by the relative slipping of the two elementary layers comprising the layer stack, which results in a lowering of the symmetry of the cavities occupied by the thallium atoms.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1131161
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  • 9
    Digitale Medien
    Digitale Medien
    Optical properties of a polymer host matrix containing mercuric iodide microcrystals (2000)
    Springer
    Physics of the solid state 42 (2000), S. 1832-1834 
    Details
    ISSN: 1063-7834
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Microcrystals of mercuric iodide have been grown in a polymer matrix with pores 200 nm in diameter. The absorption and luminescence spectra indicate the formation of microcrystals of two (red and orange) modifications in the host matrix. The temperature dependence of the emission spectra and the evolution of absorption and emission spectra in the course of sample ageing have been studied. The evolution of the spectra is governed by the transition from the orange to red modification and the increase in size of microcrystals.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1318872
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  • 10
    Digitale Medien
    Digitale Medien
    Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment (1998)
    Springer
    Semiconductors 32 (1998), S. 1075-1076 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract Plasma processing of single-crystal wafers of gallium arsenide and gallium phosphide is employed to obtain thin wideband layers. The spectral dependence of the photoluminescence of the layers and of the photosensitivity of the corresponding layer/substrate structures is investigated. An analysis of the results of these studies gives us reason to believe that the described process leads to replacement of arsenic and phosphorus atoms by nitrogen and to the formation of wideband layers of solid solutions on the surface of the indicated semiconductors.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187570
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