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  • 1
    Digitale Medien
    Digitale Medien
    Growth of high quality Al0.22Ga0.78As layers on Si substrates by metalorganic chemical vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4112-4115 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High quality epitaxial layers of Al0.22Ga0.78As have been grown on Si substrates by adopting thermal cycle annealing. The quality of the Al0.22Ga0.78As has been assessed by photoluminescence, deep-level transient spectroscopy, and double-crystal x-ray diffraction studies. The emergence of a new luminescence emission (1.718 eV), high concentrations of shallow levels, passivation of a deep level (0.43 eV), and dislocation reduction in the high-temperature thermal cycle annealed samples have been explained by a silicon diffusion mechanism and the formation of complex point defects. Deep-level emission at 0.64 eV has been attributed to disordering in the epitaxial layers. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363282
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  • 2
    Digitale Medien
    Digitale Medien
    Photovoltaic properties of an AlxGa1−xAs solar cell (x=0–0.22) grown on Si substrate by metalorganic chemical vapor deposition and thermal cycle annealing (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9375-9378 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of a thermal cycle annealing (TCA) process on the defects in GaAs and AlxGa1−xAs solar cells on Si substrates are described in this paper. The defect density is reduced and the solar cell efficiency is improved by TCA. The defect density and the solar cell efficiency are evaluated in detail with respect to TCA temperature and Al composition. The problems involved in the fabrication of a high efficiency AlGaAs solar cell on a Si substrate are discussed. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362616
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  • 3
    Digitale Medien
    Digitale Medien
    High efficiency AlGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4196-4199 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The improvements of the AlGaAs solar cell grown on the Si substrate and the AlGaAs/Si tandem solar cell by metalorganic chemical vapor deposition have been investigated. The active-area conversion efficiency of the Al0.1Ga0.9As solar cell on the Si substrate as high as 12.9% has been obtained by improving the growth sequence and adopting an Al compositionally graded band emitter layer. A high efficiency monolithic AlGaAs/Si tandem solar cell with the active-area conversion efficiency of 19.9% and 20.6% (AM0 and 1 sun at 27 °C) under two-terminal and four-terminal configurations, respectively, is demonstrated. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359880
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  • 4
    Digitale Medien
    Digitale Medien
    Structure of AlAs/GaAs distributed Bragg reflector grown on Si substrate by metalorganic chemical vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3836-3838 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A vertical-cavity surface-emitting laser diode with 20 pairs of AlAs/GaAs distributed Bragg reflectors (DBRs) has been grown on a Si substrate using metalorganic chemical vapor deposition. Interfacial roughness and compositional profile of the AlAs/GaAs DBR structure were studied by cross-sectional scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Auger electron spectroscopy. Cross-sectional SEM and TEM observations reveal quasi-periodic zigzag roughness and nonuniformity in the AlAs and GaAs layers. Auger electron spectroscopy reveals compositional transitions at the AlAs/GaAs heterointerfaces. A lower reflectivity of the AlAs/GaAs DBR on the Si substrate is caused by the degraded heterointerfaces. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358560
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  • 5
    Digitale Medien
    Digitale Medien
    Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganic chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6908-6913 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The crystallinity of GaAs grown on Si with various intermediate layers by metalorganic chemical vapor deposition and characteristics of Schottky diodes fabricated on the grown GaAs/Si have been studied. The GaAs/Si with an Al0.55Ga0.45P intermediate layer has both good crystallinity, x-ray full width at half maximum of 188 arc sec, and a smooth surface. The Schottky diode fabricated on the GaAs/Si with an Al0.55Ga0.45P intermediate layer also shows good forward and reverse current-voltage characteristics with an ideality factor of 1.06, as good as for an n-type GaAs substrate. However, a relatively large leakage current is observed under reverse and small forward bias. This leakage current is caused by generation and recombination through the centers related to dislocations in the GaAs/Si.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345083
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  • 6
    Digitale Medien
    Digitale Medien
    Hydrogen plasma passivation of GaAs on Si substrates for solar cell fabrication (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2285-2288 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of hydrogen plasma treatment and postannealing on GaAs solar cells on Si substrates have been investigated. It is found that postannealing temperature is an important parameter to obtain GaAs on Si with a long minority carrier lifetime. The minority carrier lifetime is increased and the deep level concentration is decreased by the hydrogen plasma treatment. Even after 450 °C postannealing with the complete recovery of the shallow impurity level, the minority carrier lifetime is still longer and the deep level concentration is lower than those of the as-grown sample. It means that the defects in GaAs on Si are passivated by hydrogen. The efficiency of GaAs-on-Si solar cell (air mass 0, 1 sun) is improved from 16.6% (as-grown) to 18.3% by the hydrogen plasma passivation and to 17.2% by the hydrogen plasma passivation and postannealing at 450 °C. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.372174
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  • 7
    Digitale Medien
    Digitale Medien
    InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 528-530 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27 °C. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1408264
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  • 8
    Digitale Medien
    Digitale Medien
    Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2995-2997 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the rapid degradation of the AlGaAs/GaAs single quantum well laser diodes on Si substrates grown by metalorganic chemical vapor deposition. The dislocations propagate at velocities up to ∼75 μm/h along 〈100〉 and ∼20 μm/h along 〈110〉, which cause an increase in threshold current and a decrease in differential quantum efficiency. The degraded current–voltage characteristic resulted from the defect-assisted impurity diffusion. The degradation process occurs very rapidly due to the presence of a high density of defects and thermally induced strain. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114930
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  • 9
    Digitale Medien
    Digitale Medien
    2000 h stable operation in 0.87 μm light-emitting diode using stress-free InGaP/GaAs/Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3605-3607 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have grown Al-free reliable 877 nm In0.49Ga0.51P/GaAs light-emitting diodes (LEDs) on Si substrates by metalorganic chemical vapor deposition. The conventional Al-containing Al0.3Ga0.7As/GaAs LEDs on Si substrates exhibit rapid degradations because of the formation of dark-line defects (DLDs). On the contrary, the In0.49Ga0.51P layer on the GaAs/Si substrate exhibited a 300 K electron mobility of 950 cm2/V s with the carrier concentration of 3.8×1017 cm−3, no residual stress and a lower surface recombination velocity. The In0.49Ga0.51P/GaAs LED on Si shows the stable operation for more than 2000 h, which results from the suppression of the formation of DLDs. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115332
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  • 10
    Digitale Medien
    Digitale Medien
    Transmission electron microscopy characterization of the initial stage of epitaxial growth of GaP on Si by low-pressure metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2108-2110 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The initial stage of epitaxial growth of GaP on Si by low-pressure metalorganic chemical vapor deposition was characterized by transmission electron microscopy. The growth mode changes from three-dimensional to two-dimensional with increasing V/III ratio. GaP on Si grown at a low V/III ratio of 800 contains many dislocations, stacking faults, and microtwins; however, a significant reduction in the density of these defects is observed in GaP grown at high V/III ratio of 3200.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104975
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