ISSN:
1432-0630
Schlagwort(e):
PACS: 78.65; 73.40. L4
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract . We report the first observation of well-resolved exciton peaks in the room-temperature absorption spectrum of the strained In0.20Ga0.80As/GaAs Single Quantum–Well (SQW) structure. The best fit of the exciton resonances gives the conduction-band offset ratio Q c=0.70±0.05. The strength of the exciton–phonon coupling is determined from linewidth analysis and is found to be much larger than that of strained InGaAs/GaAs MQW structures.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF01538398
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