ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
The preparation of well-characterized silicide thin films for microelectronics needs a control of interfacial reactions and diffusion processes during heat treatment of metal/semiconductor systems. Two sandwich structures of Si(33 nm)/Me(50 nm)/Si(33 nm), where Me = Ni or Cr, with a total thickness of each structure of 116 nm were sputter deposited onto smooth silicon-(111) substrates. The reactions of both metals with amorphous silicon thin films were activated in a differential scanning calorimeter (DSC), at a heating rate of 40°C/min-1, between room temperature and different higher temperatures. Auguer electron spectroscopy depth profiles showed that the Si/Ni/Si sandwich structure reacted almost completely during heat treatment up to 320°C and formed reaction products with a composition close to Ni3Si2. Selected area diffraction patterns revealed that this is a mixture of Ni2Si and NiSi silicides. A much less pronounced reaction between Si and Cr was observed in the Si/Cr/Si sandwich structure, even with heating to 630°C, resulting in CrSi2 silicide and different Cr-Si solid solutions. The results of AES depth profiling studies of the thermally treated sandwich structures are discussed in terms of diffusion processes, movement of interfaces and formation of silicides. The additional information obtained with differential scanning calorimetry and transmission electron microscopy enables a detailed identification of reaction products formed in the early stage of the thermally treated Si/Me/Si structures.
Additional Material:
5 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740210808
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